Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.     

Improvement of the position resolution of the CCD for X-ray use

The authors report here experimental results relating X-ray interaction location and event splitting. The X-ray interaction location can be localized at subpixel scale using the mesh technique. The authors found that the center of gravity of the split event is well-correlated with the X-ray interaction location. They analyzed the data using two models for the charge cloud shape: one is the rectangular model and the other is the Gaussian model. Although the authors could not distinguish between these models, they measured a root mean square charge cloud size of 1 to 2 μm for X-rays of Y-L (1.9 keV), Ag-L (3.0 keV), and Ti-K (4.5 keV). When the X-rays enter near the pixel boundary, the charge splits into adjacent pixels, allowing determination of the X-ray interaction location with an accuracy of 1.5 to 2.2 μm. The authors, therefore, expect that the X-ray CCD can function as an X-ray imager with subpixel resolution, which will be especially useful in applications involving very high spatial resolution optics     

Out‐of‐Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2 and MoSe2 on Au(111)

Making contact of transition metal dichalcogenides (TMDCs) with a metal surface is essential for fabricating and designing electronic devices and catalytic systems. It also generates strain in the TMDCs that plays significant role in both electronic and phonon structures. Therefore, detailed understanding of mechanism of the strain generation is important to fully comprehend the modulation effect for the electronic and phonon properties. Here, MoS₂ and MoSe₂ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out‐of‐plane strain in both MoS₂ and MoSe₂ layers, whereas no strain generation is observed on polycrystalline Au or SiO₂/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S? Mo? S (Se? Mo? Se) structure and Au atoms via unique moiré superstructure formation for MoS₂ and MoSe₂ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out‐of‐plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS₂ or MoSe₂ layer.     

Near-infrared imaging of water in a polymer electrolyte membrane during a fuel cell operation

A novel technique of spectroscopic imaging using a near-infrared (NIR) laser sheet beam was developed for visualization of liquid water in a proton-exchange membrane (PEM) sandwiched between two opaque electrodes set in a polymer electrolyte fuel cell (PEFC). In-plane two-dimensional distribution of water in the thin membrane was clearly visualized during the fuel cell operation. Under the condition of fuel feeding into the PEFC without humidification, water was generated by the fuel cell reaction in the whole electrode area. In contrast, under the condition of fuel feeding with humidification, the PEM got wet in the vicinity of a gas flow field locally.     

Silica films with a single-crystalline mesoporous structure

Films of mesoporous materials attract broad interest because of their wide applicability in the fields of optics and electronics. Although many of these films have a regular local porous structure, the structural regularity has not been used practically yet because of difficulties in its control on macroscopic scales. Here, we demonstrate the preparation of mesoporous silica films whose porous structure can be described as a single crystal, that is, a long-range order of cage-like pores is maintained over centimetre scales. These films have a three-dimensional hexagonal (space group P6(3)/mmc) porous structure, and the in-plane arrangement of the pores is strictly controlled by a polymeric substrate surface that has been treated by rubbing. This new class of single-crystalline films with mesoscopic periodic structure is a significant breakthrough in bottom-up nanotechnology, and could lead to novel devices, for example, optics in a soft X-ray region, and quantum electronics.     

Identification of pentosidine as a native structure for advanced glycation end products in beta-2-microglobulin-containing amyloid fibrils in patients with dialysis-related amyloidosis

beta-2-Microglobulin (beta-2m) is a major constituent of amyloid fibrils in patients with dialysis-related amyloidosis (DRA). Recently, we found that the pigmented and fluorescent adducts formed nonenzymatically between sugar and protein, known as advanced glycation end products (AGEs), were present in beta-2m-containing amyloid fibrils, suggesting the possible involvement of AGE-modified beta-2m in bone and joint destruction in DRA. As an extension of our search for the native structure of AGEs in beta-2m of patients with DRA, the present study focused on pentosidine, a fluorescent cross-linked glycoxidation product. Determination by both HPLC assay and competitive ELISA demonstrated a significant amount of pentosidine in amyloid-fibril beta-2m from long-term hemodialysis patients with DRA, and the acidic isoform of beta-2m in the serum and urine of hemodialysis patients. A further immunohistochemical study revealed the positive immunostaining for pentosidine and immunoreactive AGEs and beta-2m in macrophage-infiltrated amyloid deposits of long-term hemodialysis patients with DRA. These findings implicate a potential link of glycoxidation products in long-lived beta-2m-containing amyloid fibrils to the pathogenesis of DRA.     

FATIGUE LIMIT OF BLUNT-NOTCHED COMPONENTS

The position and effective resistance of microstructural barriers and their relation to the fatigue strength of blunt-notched specimens are analysed and modelled for three low-carbon steel microstructures. A relationship for the notch size effect on the basis of the experimental evidence that the fatigue limit (both plain and notched) represents the threshold stress for the propagation of the nucleated microstructurally short cracks, was derived. The derived relationship characterizes the fatigue notch sensitivity by means of the parameter k_td defined as the stress concentration introduced by the notch at a distance d from the notch root surface equal to the distance between microstructural barriers, and was experimentally verified for two notch geometries in three microstructures: ferrite, ferrite–bainite and bainite–martensite.     

The effect of interleukin-6 on enhancing the invasiveness of head and neck cancer cells in vitro

Three male patients, aged 43, 41 and 44 years, were referred to the cardiologist because of complaints of angina pectoris; one of them also had an aortic valve stenosis. Nine to 22 years before, they had received radiotherapy on the mediastinum because of Hodgkin's disease. Coronary angiography showed severe stenoses of the ostium of the right coronary artery or of the main left coronary artery, following which the patients were treated with coronary artery bypass surgery, aortic valve replacement and (or) drugs. These locations are very unusual in patients with angina who did not receive any radiation therapy, but they are seen frequently in patients who have received radiotherapy on the mediastinum. The pathogenesis of these lesions is not exactly known. The normal risk factors for atherosclerosis plus free oxygen radicals are probably involved. The free oxygen radicals, generated by radiation, locally activate coagulation via various hypothetical mechanisms. The damaging effect of radiotherapy could therefore be prevented by antioxidants. However, the therapeutic effect of radiation would most likely decrease as well. A more rational approach to prevent these vascular lesions would be to reduce the radiation load, to treat the risk factors for atherosclerosis and to give platelet aggregation inhibitors such as acetylsalicylic acid.     

Device simulation of submicrometer gate p+-i-p+ diamond transistors

Two-dimensional device simulation of submicrometer gate diamond p ⁺-i-p⁺ transistors with a SiO₂ gate insulator was investigated using the MEDICI device simulation program. A large modulation of the source-to-drain current was obtained in the accumulation mode. The computed diamond device characteristics were equivalent or better than the simulation results of 6H-SiC MESFET's. It was concluded that the problems in diamond MESFET associated with the deep acceptor levels due to boron doping can be overcome in the p⁺ -i-p⁺ diamond FET's because of the hole injection and the space charge limited current