Tc(VII) Sorption by Fibrous Sorbents

It is shown that technetium can be extracted from acidic media by the fibrous complexing sorbent POLIORGS 35, containing hydrazidine groups, and from neutral and nitric-acid solutions with a complex salt composition (with nitrate-ion concentration not exceeding 10 g/liter) by strongly basic anionite POLIORGS AV-17 with quaternary ammonium bases. The effect of the pH of the solutions on the sorption of technetium is studied. It is shown that the sorption depends on the nature and concentration of the salt background of the solutions. The kinetics and mechanism of sorption of technetium by fibrous sorbents and the possibility of their desorption and reuse in sorption–desorption cycles are investigated. It is shown that the fibrous sorbents POLIORGS 35 and POLIORGDS AV-17 are promising for extracting technetium from waters with a high mineral content (up to 20 g/liter).     

Inhibitory Effect of some carbazides on corrosion of aluminium in hydrochloric acid and sodium hydroxide solutions

The dissolution of aluminium in hydrochloric acid and sodium hydroxide solutions in the presence of semicarbazide, thiosemicarbazide and sym.diphenylcarbazide as corrosion inhibitors has been studied using thermometric, weight-loss and polarization methods. The three methods gave consistent results. The higher inhibition efficiency of these compounds in acidic than in alkaline madia may be due to the less negative potential of aluminium in hydrochloric acid solution, favouring adsorption of the additive. The adsorption of these compounds were found to obey Frumkin adsorption isotherm. Cathodic polarization measurements showed that these compounds are cathodic inhibitors and their adsorption in the double layer does not change the mechanism of the hydrogen evolution reaction. The results are analysed in terms of both molecular and cationic adsorption.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region