Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System

In this paper, we have verified stress root caused by lightning surge in High voltage BJT based line driver of ADSL telecommunication and created failure mechanism. To reproduce damages in Line driver, we have applied STD surge waveform in operating condition, which is specified in IEC-6000-4-5, to component and board level. Visual isolation for Damage root was conducted with Real-time Electrical Stress Analysis (RTESA) utilizing Photon Emission Microscopy (PEM). The surge made with input of Tx output created junction breakdown of amplifier, which is made of HVBJT cells, and also caused current crowding from Vcc (supply voltage). In case of Positive pulse, current crowding was observed from between Collector and Vcc (+)12V. For negative pulse, at between Emitter and Vee (−)12V, current crowding was found. For both cases, device damage level was the same. All of these could be considered as transient latchup phenomenon created in BJT cell. Applying temporary clamping diode to line driver Tx, we have conducted Board level surge injection test. As a result, with the correlation between surge level from component level reproduction test and the one from system level, we have decided field lightning surge damage level and set up line driver protection margin.     

A new method to suppress harmonics using /spl lambda//4 bias line combined by defected ground structure in power amplifiers

A new /spl lambda//4 bias line combined by a dumb-bell shaped defected ground structure (DGS) is proposed to suppress harmonics in power amplifiers. The proposed DGS bias line maintains the required high impedance even after DGS is inserted, while the width and length of the /spl lambda//4 bias line are broader and shorter than those of conventional bias lines. When the DGS bias line is used in power amplifiers, the third harmonic components as well as the second harmonic are reduced, because of the increased slow-wave effect over wide harmonic band. It is shown that the reduction of the third harmonic component, the improvement of 1 dB compression point, and power added efficiency are 26.5 dB, 0.45 dB, and 9.1%, respectively.     

Facile Fabrication and Superparamagnetism of Silica‐Shielded Magnetite Nanoparticles on Carbon Nitride Nanotubes

Using conventional methods to synthesize magnetic nanoparticles (NPs) with uniform size is a challenging task. Moreover, the degradation of magnetic NPs is an obstacle to practical applications. The fabrication of silica‐shielded magnetite NPs on carbon nitride nanotubes (CNNTs) provides a possible route to overcome these problems. While the nitrogen atoms of CNNTs provide selective nucleation sites for NPs of a particular size, the silica layer protects the NPs from oxidation. The morphology and crystal structure of NP–CNNT hybrid material is investigated by transmission electron microscopy (TEM) and X‐ray diffraction. In addition, the atomic nature of the N atoms in the NP–CNNT system is studied by near‐edge X‐ray absorption fine structure spectroscopy (nitrogen K‐edge) and calculations of the partial density of states based on first principles. The structure of the silica‐shielded NP–CNNT system is analyzed by TEM and energy dispersive X‐ray spectroscopy mapping, and their magnetism is measured by vibrating sample and superconducting quantum interference device magnetometers. The silica shielding helps maintain the superparamagnetism of the NPs; without the silica layer, the magnetic properties of NP–CNNT materials significantly degrade over time.     

Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.     

Fabrication of a Superhydrophobic Surface from a Smectic Liquid‐Crystal Defect Array

A novel fabrication method is developed for the preparation of superhydrophobic surfaces. The procedure uses focal conic structures of semi‐fluorinated smectic liquid crystals (LCs) whose periodic toric focal conic domains (TFCDs) are prepared on a surface modified substrate. Reactive ion etching (RIE) on the periodic TFCD surface leads to a superhydrophobic surface with a water contact angle of ～160° and a sliding angle of ～2° for a 10 µL water droplet. The results show that this phenomenon is due to the development of a dual‐scale surface roughness arising from the nanoscale protuberance caused by applying the RIE process to the top of the microscale TFCD arrays. The unique surface behavior is further verified by demonstrating that RIE on a flat lamellar liquid crystal film, in which the director is aligned parallel with surface, results in a relatively low hydrophobicity as compared to when periodic TFCDs are subjected to REI. The observations made in this publication suggest that a new approach exists for selecting potential candidates of superhydrophic surface formation based on spontaneous self‐assembly in smectic liquid‐crystalline materials.     

Cue-based networking

In this paper we present a new approach called cue-based networking that uses hints or cues about the physical environment to optimize networked application behavior. We define the notion of cues and describe how cues can be obtained using wireless sensor networks as the underlying platform. We identify both the research and system challenges that need to be addressed to realize benefits of the approach under a target application of video delivery over IP networks. In the process, we identify key challenges of wireless sensor networks, namely timeliness and robustness. We design an adaptive algorithm that balances the tradeoff between them satisfying both timeliness and robustness requirements. Through an implementation of the video delivery application using the proposed algorithm in a real home environment, we highlight the practical benefits of the proposed approach.     

Rake‐Based Cellular Radar Receiver Design for Moving Target Detection in Multipath Channel

In this paper, we design a rake‐based cellular radar receiver (CRR) scheme to detect a moving target located in a multipath environment. The modules of Doppler filter banks, threshold level test, and target detection module are newly introduced into the conventional rake receiver so that it can function as a radar system. The proposed CRR tests the Doppler‐shift frequency and signal‐to‐noise ratio of the received signal against predefined threshold levels to determine detection and then calculates target velocities and ranges. The system performance is evaluated in terms of detection probability and the maximum detection range under a Nakagami‐n channel that reflects the multipath environment.     

Survey on blockchain-based non-fungible tokens: History,technologies, standards,and open challenges

This paper presents a survey of non-fungible tokens (NFTs), including its history, technologies, standards, and challenges in their development. An NFT is a unique digital entity that is created and maintained using blockchain technology. Each NFT is identified using a unique smart contract and a token ID, so the whole history of the NFT can be globally identified by its address and token ID. The blockchain information indelibly identifies the current owner of any asset, previous owners, and original creator. NFTs are used to manage ownership of digital and physical assets and cryptocurrencies. The prices of popular NFTs have become very high, and the market for them has overheated in recent years. NFT technology and its ecosystem have evolved since Quantum, the first NFT, was stored in the Namecoin blockchain. Ethereum has become the main platform for NFT projects because it provides support for smart contracts. Currently, almost all NFT projects are launched on the Ethereum blockchain. NFT has two major standards called ERC-721 and ERC-1155, which have had important functions in the development of NFT. Starting with these two standards, other standards for NFT continue to emerge; they expand the functionality of NFT such as by adding utility. However, NFT is a very early technology, and it has not been long after the NFT concept was created and used. So there are several challenges for further improving NFT technology, in terms of usability, interoperability, and evolution. This paper presents a survey of NFT, including its history, technologies, standards, and challenges of NFT.     

Covalent 0D–2D Heterostructuring of Co9S8–MoS2 for Enhanced Hydrogen Evolution in All pH Electrolytes

Ultrasmall Co₉S₈ nanoparticles are introduced on the basal plane of MoS₂ to fabricate a covalent 0D–2D heterostructure that enhances the hydrogen evolution reaction (HER) activity of electrochemical water splitting. In the heterostructure, separate phases of Co₉S₈ and MoS₂ are formed, but they are connected by Co–S–Mo type covalent bonds. The charge redistribution from Co to Mo occurring at the interface enhances the electron‐doped characteristics of MoS₂ to generate electron‐rich Mo atoms. Besides, reductive annealing during the synthesis forms S defects that activates adjacent Mo atoms for further enhanced HER activity as elucidated by the density functional theory (DFT) calculation. Eventually, the covalent Co₉S₈–MoS₂ heterostructure shows amplified HER activity as well as stability in all pH electrolytes. The synergistic effect is pronounced when the heterostructure is coupled with a porous Ni foam (NF) support to form Co₉S₈–MoS₂/NF that displays superior performance to those of the state‐of‐the‐art non‐noble metal electrocatalysts, and even outperforms a commercial Pt/C catalyst in a practically meaningful, high current density region in alkaline (>170 mA cm^?2) and neutral (>60 mA cm^?2) media. The high HER performance and stability of Co₉S₈–MoS₂ heterostructure make it a promising pH universal alternative to expensive Pt‐based electrocatalysts for practical water electrolyzers.     

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al–Sn–Zn–In–O (a-AT-ZIO) channel deposited by cosputtering using a dual Al–Zn–O and In–Sn–O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ hbox{cm}^{2}/hbox{V}cdothbox{s}$, an excellent subthreshold gate swing of 0.07 V/decade, and a high $I_{{rm on}/{rm off}}$ ratio of $≫hbox{10}^{9}$, even below the process temperature of 250 $^{circ}hbox{C}$. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived $hbox{Al}_{2} hbox{O}_{3}$ thin film.