Optimizing the selective flocculation of coal by means of a selective reagent

The need to improve coal enrichment stems from the sharp deterioration in the coal being enriched (increasing ash and moisture content, content of small classes, rock content, etc.), which results from the widespread mechanization of mining operations, the development of high-ash deposits, and dust suppression [1].     

Dynamic modes of Ti combustion in a coflow of N<Subscript>2</Subscript>-Ar mixture

Combustion of bulk density Ti powder (containing 20 wt % TiN as a diluent) in a coflow of N₂-Ar mixture was investigated upon variation in the nitrogen content of the gaseous mixture. The obtained data are believed to open up new horizons for fabrication of layered and composite ceramics by infiltration-mediated combustion.      

A fragmentary model of vitreous As<Subscript>2</Subscript>S<Subscript>3</Subscript>

The X-ray scattering intensity curves for vitreous As₂S₃ are experimentally measured using soft (copper) and hard (molybdenum) X rays. The inclusion of all the specific features revealed in the experimental scattering intensity curves makes it possible to obtain the experimental atomic radial distribution function (ARDF) in the ordering range up to ～1 nm. The experimental ARDF is interpreted in the framework of the fragmentary model. A comparison of the experimental ARDF with the model ARDF calculated from the crystal structure data obtained for orpiment demonstrates that the corrugated layers inherent in crystalline As₂S₃ are retained in the glass structure but the characteristic interlayer interatomic distances are absent. The layers are joined together through the As₄S₅ molecular clusters. Microcrystals consisting of several unit cells are absent in the glass structure, which involves only the structural fragments of both crystalline analogs. One of the possible variants of their joining is proposed.     

Software for computing dusty air flows in ventilation systems

Programs are presented for calculating dusty air flow in ventilation systems, which have been derived from the method of singular integral equations. They allow one to construct flow lines and determine the velocity pattern for the air in a closed rectangular region with outlet, flow, and extraction holes; a study is made on the dust particle behavior in the aerodynamic field in which there may be a rotating cylinder or pumping cylinder; determinations are made of the concentration and grain-size composition of the dust in the extraction hole; one can construct flow lines and single-particle paths in multicoupled regions of potential flows containing any number of rotating cylinders and cylinder pumps. Translated from Novye Ogneupory, No. 5, pp. 53–58, May, 2008.     

Introduction of microdoses of germanium and indium dopants into the bulk and surface layers of semiconductor materials

A technique is proposed for introducing microdoses (10^?5–10^?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI₂ system containing 5 mol % GeI₂) and indium cations (the InCl₃-MgCl₂ system containing 15 mol % MgCl₂, the InCl₃-CdCl₂ system containing 1.5 mol % CdCl₂, and the In₂S₃-InCl₃ system containing 5 mol % InCl₃) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd_{1 ± δ}Cr₂Se₄. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors.