基于钻杆检测的套管磨损监测技术研究与试验

鉴于目前钻井现场缺乏有效的套管磨损监测技术的现状,建立了利用钻杆接头磨损量、钻柱组合和钻时数据反算套管磨损量的计算模型,编制了相应的计算程序,形成了一套可计算任意井深处套管磨损量的现场监测技术。建模时假设套管与钻杆接头的磨损量与磨损时间成正比,套管磨损量与钻杆接头磨损量成比例。现场试验结果表明,钻杆接头外径检测方法可以计算出各井深处套管磨损的体积,而且监测和计算过程不复杂,操作过程对钻井作业不产生影响,是适合现场操作的套管磨损监测方法。     

第二代催化裂化汽油选择性加氢脱硫（RSDS-Ⅱ）技术的中试研究及工业应用

对催化裂化汽油中硫化物及烃类分布进行详细分析,确立第二代催化裂化汽油选择性加氢脱硫（RSDS-Ⅱ）技术的工艺路线。中试试验结果表明,RSDS-Ⅱ技术对多种原料油具有较好的适应性。工业应用标定结果表明,以烯烃体积分数38.7%～43.3%、硫质量分数250～470 g/g的催化裂化汽油为原料,经过RSDS-Ⅱ技术处理后汽油产品硫质量分数小于50 g/g,满足沪Ⅳ/欧Ⅳ排放标准,RON损失0.3～0.6个单位,说明RSDS-Ⅱ技术具有较好的脱硫活性和较高的选择性,完全可以满足炼油厂汽油质量升级的需要。     

长垣油田地震资料各向异性时差分析与校正

在方位各向异性介质中地震波沿不同方位的传播速度存在差异,会引起宽方位地震资料CDP道集内的道间时差,处理技术无法消除这一时差,必须寻找有效而适用的解决办法,以提高地震成像精度和分辨率。为了满足长垣油田开发后期剩余油挖潜精细地质研究对地震资料的品质要求,基于长垣油田高密度三维三分量（3D3C）地震实验区数据,分析了引起方位各向异性的地质原因,研究了地震资料中方位各向异性的表现特征。通过实际地震资料分析可知,该区快波速度方位约在NE67°,与现代主应力场方向及沉积物源方向一致,在CDP道集内方位各向异性时差约为10 ms,且各向异性强度和方向随深度而变化。进一步研究并试验了模型道相关法时差校正技术,以层剥离方式消除不同沉积时期的方位各向异性时差。通过最终成像效果对比可见,方位各向异性时差校正可提高地震数据成像品质,有利于小断层识别与薄砂体描述。     

FATIGUE UNDER CYCLIC COMPRESSIVE LOAD

For ultra-high strength steels and aluminium alloys, a fatigue crack could initiate from a notch tip under cyclic compressive load. The threshold value for fatigue crack initiation under compressive load can be as great as four times that under tensile load. The crack grew at a decreasing rate until eventually it stopped growing altogether under cyclic compressive load with a maximum length of 0.2-0.5 mm. If the minimum compressive load was near zero, i.e. compression to zero load cycling, the threshold value was near that under tensile loading and the compressive fatigue crack could continue to grow; however, the crack growth rate under compression to zero load fatigue was 10–100 times less than that under the tensile fatigue loading.     

不同磨料对微晶玻璃化学机械抛光的影响

为了提高微晶玻璃化学机械抛光(CMP)的材料去除速率(MRR),降低其表面粗糙度,利用自制的抛光液对微晶玻璃进行化学机械抛光,研究了4种含不同磨料(Si O2、Al2O3、Fe2O3、Ce O2)的抛光液对微晶玻璃化学机械抛光MRR和表面粗糙度的影响.利用纳米粒度仪检测抛光液中磨料的粒径分布和Zeta电位,利用原子力显微镜观察微晶玻璃抛光前后的表面形貌.实验结果表明,在相同条件下,采用Ce O2作为磨料进行化学机械抛光时可以获得最好的表面质量,抛光后材料的表面粗糙度Ra=0.4 nm,MRR=100.4 nm/min.进一步研究了抛光液中不同质量分数的Ce O2磨料对微晶玻璃化学机械抛光的影响,结果表明,当抛光液中Ce O2质量分数为7%时,最高MRR达到185 nm/min,表面粗糙度Ra=1.9 nm;而当抛光液中Ce O2质量分数为5%时,MRR=100.4 nm/min,表面粗糙度最低Ra=0.4 nm.Ce O2磨料抛光后的微晶玻璃能获得较低表面粗糙度和较高MRR.     

Modulation of Metal and Insulator States in 2D Ferromagnetic VS2 by van der Waals Interaction Engineering

2D transition‐metal dichalcogenides (TMDCs) are currently the key to the development of nanoelectronics. However, TMDCs are predominantly nonmagnetic, greatly hindering the advancement of their spintronic applications. Here, an experimental realization of intrinsic magnetic ordering in a pristine TMDC lattice is reported, bringing a new class of ferromagnetic semiconductors among TMDCs. Through van der Waals (vdW) interaction engineering of 2D vanadium disulfide (VS₂), dual regulation of spin properties and bandgap brings about intrinsic ferromagnetism along with a small bandgap, unravelling the decisive role of vdW gaps in determining the electronic states in 2D VS₂. An overall control of the electronic states of VS₂ is also demonstrated: bond‐enlarging triggering a metal‐to‐semiconductor electronic transition and bond‐compression inducing metallization in 2D VS₂. The pristine VS₂ lattice thus provides a new platform for precise manipulation of both charge and spin degrees of freedom in 2D TMDCs availing spintronic applications.     

Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior

Solution‐processable organic–inorganic hybrid perovskite materials with a wealth of exotic semiconducting properties have appeared as the promising front‐runners for next‐generation electronic devices. Further, regarding its well photoresponsibility, various perovskite‐based photosensing devices are prosperously developed in recent years. However, most exploited devices to date only transiently transduce the optical signals into electrical circuits while under illumination, which necessitates using additional converters to further store the output signals for recording the occurrence of light stimulation. Herein, a nonvolatile perovskite‐based floating‐gate photomemory with a multilevel memory behavior is demonstrated, for which a floating gate comprising a polymer matrix impregnated with perovskite nanoparticles is employed. Owing to the well photoresponsibility introduced by the embedded nanoparticles, the device is enabled to access multiple wavelength response and the functionalities of recording power/time‐dependent illumination under no vertical electrical field. Intriguingly, a nonvolatility of photorecording exceeding three months with a high On/Off current ratio over 10⁴ can be achieved.     

Atomic Cobalt Covalently Engineered Interlayers for Superior Lithium‐Ion Storage

With the unique‐layered structure, MXenes show potential as electrodes in energy‐storage devices including lithium‐ion (Li⁺) capacitors and batteries. However, the low Li⁺‐storage capacity hinders the application of MXenes in place of commercial carbon materials. Here, the vanadium carbide (V₂C) MXene with engineered interlayer spacing for desirable storage capacity is demonstrated. The interlayer distance of pristine V₂C MXene is controllably tuned to 0.735 nm resulting in improved Li‐ion capacity of 686.7 mA h g^?1 at 0.1 A g^?1, the best MXene‐based Li⁺‐storage capacity reported so far. Further, cobalt ions are stably intercalated into the interlayer of V₂C MXene to form a new interlayer‐expanded structure via strong V–O–Co bonding. The intercalated V₂C MXene electrodes not only exhibit superior capacity up to 1117.3 mA h g^?1 at 0.1 A g^?1, but also deliver a significantly ultralong cycling stability over 15 000 cycles. These results clearly suggest that MXene materials with an engineered interlayer distance will be a rational route for realizing them as superstable and high‐performance Li⁺ capacitor electrodes.