Provision of frequency transducers for all electrical and nonelectrical quantities

Conclusions The production of frequency transducers of digital instruments for measuring various physical quantities is one of the most promising trends of development of modern electrical measuring techniques. The above-mentioned 24 types of frequency transducers for digital measuring instruments do not in any way exhaust all the possible varieties; however, they alone cover the greater part of measurable physical quantities.From the paper read at the second inter-university conference on production automation, held in Baku in October, 1960.     

High-speed compensation instruments

Summary The use of an electronic controlled resistance for balancing compensation circuits makes it possible to construct extremely high speed compensation instruments, whose full balancing time amounts to 2–3 periods of the carrier frequency, which for a carrier frequency of the order of 1000 cps amounts to 2–3 microsec. If the carrier frequency is raised to 10–30 kc the operating time can be reduced to 0.3–0.1 microsec.     

Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides

Semiconductors - The  results  of  investigating  the  thermoelectric  properties of the bulk р-type oxyselenides Bi1 –xPrxCuSeO (x...     

Metrological maintenance of junctions for metering heat energy and hot water

A new approach to estimating the error in measuring heat energy and the flow rate of hot water at metering junctions is proposed. The results of the analysis enable one to determine the sources of systematic errors, to formulate the require-ments imposed on the metrological characteristics of the units which form part of the heat meters, and on the conditions and aims of the check, and also enable the idea of “metrological maintenance” to be introduced. The need to develop new standard documents which regulate the approach to error estimates is pointed out. Translated from Izmeritel'naya Tekhnika, No. 11, pp. 54–56, November, 1998.     

Distinctive features of the design of an electrochemical impedance meter with quadrature noise compensation

The block diagram and design are considered for an impedance meter for measuring the impedance components of electrochemical objects with almost equal errors in the frequency range 10–10⁵ Hz for tan δ=0,1,...,10. Translated from Izmeritel'naya Tekhnika, No. 8, pp. 56–59, August, 1998.     

Growth of Y<Subscript>3</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> films on Si with AlO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> and SiO<Subscript>2</Subscript> buffer layers by ion beam sputtering

Amorphous yttrium iron garnet films ranging in thickness from 100 to 600 nm have been produced on single-crystal silicon substrates by sputtering a polycrystalline target with the composition Y₃Fe₅O₁₂ (yttrium iron garnet) by a mixture of argon and oxygen ions. Before film growth, AlO _x or SiO₂ buffer layers up to 0.8 μm in thickness were grown on the Si surface. The heterostructures were crystallized by annealing in air at a temperature of 950°C for 30 min. The properties of the films were studied by magneto-optical techniques, using Kerr effect and ferromagnetic resonance measurements. The Gilbert damping parameter reached 2.8 × 10^–3 and the effective planar magnetic anisotropy field was independent of the nature of the buffer layer. This suggests that the thin-film heterostructures obtained in this study are potentially attractive for use in spin-wave semiconductor devices.