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Banerjee B. Venkataraman S. Yuan Lu Qingqing Liang Chang-Ho Lee Nuttinck S. Dekhyuon Heo Chen Y.-J.E. Cressler J.D. Laskar J. Freeman G. Ahlgren D.C. 《Electron Devices, IEEE Transactions on》2005,52(4):585-593
We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f/sub T/) of 260 GHz, a peak f/sub max/ of 310 GHz, and a minimum noise figure (NF/sub min/) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance. 相似文献