High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

Image coding by multistep, adaptive flux interpolation

The authors describe and discuss the new technique, multistep adaptive flux interpolation (MAFI), and its application to image data for coding. When applied to an image, MAFI produces an output which is also in an image form, but which has a more uniform feature density and a greatly reduced size. MAFI warps the input image by removing those rows and columns which contain a majority of redundant pixels. The side information required for reconstruction is minimal, and the image can be further compressed using conventional coders, making the compression ratio even higher. Because of its warped nature, the MAFI output's statistics are also more consistent with the properties assumed by block-based discrete cosine transform (DCT) methods     

Manufacture of films displaying liquid-crystalline structure

Reported is an attempt to attain orientation of macromolecules during extrusion of films of cellulose derivatives that led to the liquid-crystalline state of a polymer and resulted in enhanced film strength.     

Effect of repositioning of rhodium direct-charge detectors in a RBMK-1000 reactor on fuel and emitter-material burnup coefficients

Scientific-Technical Center “Atomtekhénergo.” Leningrad Nuclear Power Plant. N. V. Sultanov Institute of Nuclear Reactors, Russian Scientific Center “Kurchatovskii institut.” Translated from Atomnaya énergiya, Vol. 76, No. 6, pp. 470–473, June, 1994.     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.     

Simulation and experimental analyses of electromagnetic transients behaviors of lightning surge on vertical conductors

Simulation of very fast surge phenomena in a three-dimensional (3-D) structure requires a method based on Maxwell's equations, such as the finite-difference time-domain (FDTD) method or the method of moments, because circuit-equation-based methods cannot handle the phenomena. This paper uses a method of thin-wire representation of the vertical conductor system for the FDTD method which is suitable for the 3-D surge simulation. The thin-wire representation is indispensable to simulate electromagnetic surges on wires or steel frames in which the radius is smaller than a discretized space step used in the FDTD simulation. In this paper, a general surge analysis program named the virtual surge test lab based on the Maxwell's equations formulated by the FDTD method, is used to simulate the surge phenomena of a vertical conductor, including the effects of horizontal wave incidence and vertical wave incidence. Experimental results on the reduced scale model have been presented in order to compare among the simulation results by the FDTD method and the results using numerical electromagnetic code based on the MoM.