Asymptotic distribution of the number of isolated nodes in wireless ad hoc networks with Bernoulli nodes

Nodes in wireless ad hoc networks may become inactive or unavailable due to, for example, internal breakdown or being in the sleeping state. The inactive nodes cannot take part in routing/relaying, and thus may affect the connectivity. A wireless ad hoc network containing inactive nodes is then said to be connected, if each inactive node is adjacent to at least one active node and all active nodes form a connected network. This paper is the first installment of our probabilistic study of the connectivity of wireless ad hoc networks containing inactive nodes. We assume that the wireless ad hoc network consists of n nodes which are distributed independently and uniformly in a unit-area disk, and are active (or available) independently with probability p for some constant 0

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In-network performance of handheld mobile terminals

This paper considers a realistic evaluation of the power mobile handsets are able to transmit and receive. It has been suggested to use the so-called total radiated power (TRP) and the total isotropic sensitivity (TIS) for the uplink and downlink, respectively, which may be seen as special cases of the general mean-effective-gain (MEG) measure. These measures are computed from the spherical radiation pattern of the handset and the different measures are obtained by using different models of the mobile propagation environment. In this paper, the results obtained via the spherical radiation patterns are compared with the equivalent performance obtained in a live Global System for Mobile Communications (GSM) network using data from the Abis network interface. This method does not require altering of the handsets and the testing uses normal calls in the network. The investigation is based on measurements with four different commercially available handsets carried out in two different indoor environments and involving 22 test users. In addition, a series of measurements were also made with a phantom simulating the handset user, allowing a test of how well the phantom represents the average user.     

Uncertainty evaluation of an in vivo near-field exposure setup for testing biological effects of cellular phones

In designing an in vivo near-field exposure setup for testing biological effects of cellular phones, one generally uses a small still animal because a plastic holder is used to restrain it. One also takes no account of the exposure box with radio wave absorbers as well as the plastic holder. In this paper, for the in vivo exposure setup developed in the National Institute of Information and Communications Technology (NICT), which was used for testing the promoting effect of 1.439- and 1.95-GHz digital cellular phones on rat brain carcinogenesis, we investigated the effects of the above-mentioned factors on the dosimetry design using the finite-difference time-domain (FDTD) method in conjunction with an anatomical rat model. As a result, we found that the specific absorption rate (SAR) averaged in the brain was 18% higher at maximum than the previously designed level due to the existence of the exposure box and the plastic holder and that the variation due to the rotation of the rat's head inside the plastic holder was within 10%. The backward movement of the rat along the plastic holder was more serious, which yielded a decrease of nearly 20% for the average SAR in the brain.     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

Scheduling algorithms in broadband wireless networks

Scheduling algorithms that support quality of service (QoS) differentiation and guarantees for wireless data networks are crucial to the development of broadband wireless networks. Wireless communication poses special problems that do not exist in wireline networks, such as time-varying channel capacity and location-dependent errors. Although many mature scheduling algorithms are available for wireline networks, they are not directly applicable in wireless networks because of these special problems. This paper provides a comprehensive and in-depth survey on recent research in wireless scheduling. The problems and difficulties in wireless scheduling are discussed. Various representative algorithms are examined. Their themes of thoughts and pros and cons are compared and analyzed. At the end of the paper, some open questions and future research directions are addressed     

Novel design concept of waveguide mode adapter for low-loss modeconversion

We proposed a novel design concept of a mode adapter using a new parameter. The overlap integration of two adjacent mode profiles is defined as a single step loss (SSL) parameter for the characterization of optical mode confinement as well as the quantification of mode mismatch. The variation of SSL is described with two parameters. These parameters are V, a normalized frequency, and s, a differential width variation ratio. The contour for constant SSL in the V, s plane provides the optimized s curve as a function of V. The design concept with this constant SSL is shown to provide optimized adapters of minimized conversion loss     

Efficient Image Transmission with Multi-Carrier CDMA

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Direct Measurement of Positronium HyperFine Structure: ～ A New Horizon of Precision Spectroscopy Using Gyrotrons ～

Positronium is an ideal system for research on QED, especially in a bound state. A discrepancy (3.9σ) is found recently between measured HFS values and the QED prediction (including up-to O(α ³ log α ^− 1), where α is the fine-structure constant.). It might be due to a contribution of unknown new physics or common systematic problems in all the previous measurements. A new method to measure HFS directly is performed using a high power gyrotron. The transition from ortho-positronium to para-positronium has been observed with 5 σ CL, which is the first observation of M1 transition in (sub)Terahertz region. New technologies of high power gyrotrons are developed for precision spectroscopy.     

Digital signature to help network management using flow analysis

Because of constant growth in proportion and complexity of networks, flow analysis has become an indispensable tool for network management mechanisms. Through this resource, a traffic characterization, called digital signature of network segment using flow analysis (DSNSF), is accomplished. The models used for this purpose are the ant colony optimization metaheuristic, the Holt–Winters forecasting method and the statistical procedure, principal component analysis. The obtained DSNSF by each model is compared with the actual traffic of packets and bits and then subjected to specific evaluations in order to measure its accuracy. The experimental results show that the three methods could achieve good correlation indices and low normalized mean square error values between the DSNSF curve and the real traffic movement, indicating a good adaptability and efficiency in characterizing a network traffic segment. Copyright © 2015 John Wiley & Sons, Ltd.     

Atomic configuration and charge state of hydrogen at dislocations in silicon

The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm^–1 was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H⁰ at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.