Using a GPU to Accelerate Die and Mold Fabrication

The authors present a GPU-based method for generating and verifying cutter paths for numerically controlled milling. A CAM system based on this technology is now employed in production at Mazda Motor Corporation for manufacturing stamping dies. This system can compute cutter paths more than 20 times faster than previous methods     

Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Minor role of fractographic features in basic fatigue crack propagation properties

The fatigue crack propagation rate and the fatigue threshold were investigated for transverse-butt-welded joints of the austenitic stainless steel SUS304. Specimens were of the center-cracked type. In three sets of tests the fatigue crack passed through the weld metal, and in the other two sets, through the base metal. The fatigue crack propagation properties coincided with each other at different stress ratios for the weld metal, and at the higher stress ratios for the base metal. The propagation properties improved at the stress ratio of zero for the base metal. The absence of a stress ratio effect means that the coincided properties are basic ones in which fatigue crack closure does not occur. However, fractographic appearance and surface roughness were quite different between weld metal and base metal. The coincidence of fatigue crack propagation properties in spite of the difference in fractographic features reveals that the fractographic appearance and surface roughness only have a minor effect on basic fatigue crack propagation behaviour.     

Strongyloidiasis associated with nephrotic syndrome

We report a nephrotic syndrome patient with eosinophilia who developed ileus, epigastralgia and malabsorption due to strongyloidiasis which became symptomatic by steroid therapy. The patient was then treated with thiabendazole and recovered. A percutaneous renal biopsy revealed minimal change nephrotic syndrome. This renal injury may be brought on by severe infection of Strongyloides stercoralis. It is important to rule out strongyloidiasis prior to corticosteroid therapy to patients from eosinophilia endemic areas.     

Robust digital control of a DC–DC buck converter with low frequency samplings

A robust DC?CDC converter which can covers extensive load change and also input voltage changes with one controller is needed. Then the demand to suppress output voltage change becomes still severer. We propose an approximate 2-degree-of-freedom (2DOF) digital controller which realized start-up response and dynamic load response independently. The controller makes a control bandwidth wider, and at the same time makes variations of the output voltage small at sudden changes of a load and an input voltage. In this paper, a new approximate 2DOF digital control system with additional zeros is proposed. Using the additional zeros, the second-order differential transfer characteristics between equivalent disturbances and a output voltage are realized. Therefore, the new controller makes variations of the output voltage smaller and the sudden changes of the load and the input voltage. This controller is actually implement on a DSP and is connected to the DC?CDC converter. Experimental results demonstrate that this type of digital controller can satisfy given severe specifications with low frequency sampling.     

Thermal shock resistance of flat plastic integrated circuit packages

Flat packages (FPs) were formed from epoxy molding compounds with various physical properties using a transfer molding machine. The compounds were prepared by changing kinds and amounts of additives and addition methods. The thermal shock test was carried out by the following procedures. The plastic package was soaked alternately in liquid nitrogen (?196°) and in liquid solder (200°) in the cycle of 140s. The median life to crack initiation was defined to be the cycles when half of the specimens exhibited crack initiation. According to linear fracture mechanics, the following expression was obtained relating the median life N, thermal stress σ_t, and strength σ_b; N = C/σ·(σ_b/σ_t)^m. We found the linear relation between logarithm of Nσ and logarithm of σ_b/σ_t for various packages, and estimated the values of C and m as 5 × 10⁴ MPa² and 5.5, respectively. The value of m was the same as that obtained for a dual-in-line package.     

Gain‐Scheduled Control via Switching of LTI Controllers and State Reset

This paper proposes a synthesis method of gain‐scheduled control systems that switch linear time‐invariant controllers according to hysteresis of the scheduling parameter. Stability and L₂‐gain analysis and synthesis methods for switched systems are applied to the switched gain‐scheduled control synthesis using reset of the controller state, where also the reset law is computed via linear matrix inequalities (LMIs). In addition to optimization of an upper bound of L₂‐gain, we reduce jumps of control input via an auxiliary optimization. Numerical examples are presented to illustrate the switched gain‐scheduled controller.     

Frequency Stability Improvement of a Two-Mode Stabilized 633-nm He-Ne Laser

The red side (lower-frequency) mode of a two-mode stabilized 633-nm He-Ne laser has been locked to the hyperfine structure of the P() line of (127)I(2) by means of frequency modulation spectroscopy enhanced by an external optical cavity. Both the red side and blue side (higher-frequency) modes of the laser exhibit a frequency stability of 2.3 x 10(-11) tau(-1/2). In addition, the frequency fluctuations of the blue side mode are detected by a Fabry-Perot cavity and compensated through an acousto-optic frequency shifter. The short-term stability of better than 3 x 10(-11) is attained for integration times of between 2 x 10(-3) and 2 x 10(-1) s.