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61.
In order to support multimedia applications such as voice and video over the wireless medium, a contention-based channel access function, called Enhanced Distributed Channel Access (EDCA), has been developed in the emerging standard IEEE 802.11e. In the EDCA, differentiated channel access is provided for different traffic classes. In this paper, we propose a two-level protection and guarantee mechanism for voice and video traffic in the EDCA-based distributed wireless LANs. In the first-level protection, the existing voice and video flows are protected from the new and other existing voice and video flows via a distributed admission control with tried-and-known and early-protection enhancements. In the second-level protection, the voice and video flows are protected from the best-effort data traffic by adopting frame-based and limit-based data control mechanisms. Performance evaluations are conducted in terms of throughput, delay, transmission limit, number of collisions, and throughput square relative difference. Extensive simulation results demonstrate that the proposed two-level protection and guarantee mechanism is very effective in terms of the protection and guarantee of existing voice and video flows as well as the utilization of the channel capacity. An early version of this paper was presented at IEEE INFOCOM 2004.  相似文献   
62.
Telecommunication Systems - Signals from indoor access points in a wireless fidelity suffer from high attenuation as a result of the thick walls and metal structures in the multilevel-storey...  相似文献   
63.
While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh2)2 layer as donor material and C60 as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (Lp) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh2)2 diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.  相似文献   
64.
Nitrogen‐rich solid absorbents, which have been immensely tested for carbon dioxide capture, seem until this date to be without decisive molecular engineering or design rules. Here, a family of cyanovinylene‐based microporous polymers synthesized under metal‐catalyzed conditions is reported as a promising candidate for advanced carbon capture materials. These networks reveal that isosteric heats of CO2 adsorption are directly proportional to the amount of their functional group. Motivated by this finding, polymers produced under base‐catalyzed conditions with tailored quantities of cyanovinyl content confirm the systematical tuning of their sorption enthalpies to reach 40 kJ mol?1. This value is among the highest reported to date in carbonaceous networks undergoing physisorption. A six‐point‐plot reveals that the structure–thermodynamic‐property relationship is linearly proportional and can thus be perfectly fitted to tailor‐made values prior to experimental measurements. Dynamic simulations show a bowl‐shaped region within which CO2 is able to sit and interact with its conjugated surrounding, while theoretical calculations confirm the increase of binding sites with the increase of Ph? C?C(CN)? Ph functionality in a network. This concept presents a distinct method for the future design of carbon dioxide capturing materials.  相似文献   
65.
Understanding the relationship between the growth and local emission of hybrid perovskite structures and the performance of the devices based on them demands attention. This study investigates the local structural and emission features of CH3NH3PbI3, CH3NH3PbBr3, and CH(NH2)2PbBr3 perovskite films deposited under different yet optimized conditions using X‐ray scattering and cathodoluminescence spectroscopy, respectively. X‐ray scattering shows that a CH3NH3PbI3 film involving spin coating of CH3NH3I instead of dipping is composed of perovskite structures exhibiting a preferred orientation with [202] direction perpendicular to the surface plane. The device based on the CH3NH3PbI3 film composed of oriented crystals yields a relatively higher photovoltage. In the case of CH3NH3PbBr3, while the crystallinity decreases when the HBr solution is used in a single‐step method, the photovoltage enhancement from 1.1 to 1.46 V seems largely stemming from the morphological improvements, i.e., a better connection between the crystallites due to a higher nucleation density. Furthermore, a high photovoltage of 1.47 V obtained from CH(NH2)2PbBr3 devices could be attributed to the formation of perovskite films displaying uniform cathodoluminescence emission. The comparative analysis of the local structural, morphological, and emission characteristics of the different perovskite films supports the higher photovoltage yielded by the relatively better performing devices.  相似文献   
66.
Calcium cobaltite Ca3Co4−xO9+δ (CCO) is a promising p-type thermoelectric (TE) material for high-temperature applications in air. The grains of the material exhibit strong anisotropic properties, making texturing and nanostructuring mostly favored to improve thermoelectric performance. On the one hand multitude of interfaces are needed within the bulk material to create reflecting surfaces that can lower the thermal conductivity. On the other hand, low residual porosity is needed to improve the contact between grains and raise the electrical conductivity. In this study, CCO fibers with 100% flat cross sections in a stacked, compact form are electrospun. Then the grains within the nanoribbons in the plane of the fibers are grown. Finally, the nanoribbons are electrospun into a textured ceramic that features simultaneously a high electrical conductivity of 177 S cm−1 and an immensely enhanced Seebeck coefficient of 200 µV K−1 at 1073 K are assembled. The power factor of 4.68 µW cm−1 K−2 at 1073 K in air surpasses all previous CCO TE performances of nanofiber ceramics by a factor of two. Given the relatively high power factor combined with low thermal conductivity, a relatively large figure-of-merit of 0.3 at 873 K in the air for the textured nanoribbon ceramic is obtained.  相似文献   
67.
This article reviews the steps necessary to configure and implement a complex router internetwork. This article will specifically concentrate on Cisco routers, and since they support Transmission Control Protocol/Internet Protocol (TCP/IP) natively, it will concentrate on a backbone network employing that protocol.  相似文献   
68.
Messages that are sent to and received by multiple sites need to have a consistent order imposed by all sites. Causal ordering allows the cause and effect relations of messages to be maintained. This paper presents an algorithm that ensures that multimedia data with real‐time deadlines are delivered to the application layer in causal order. The algorithm is designed to ensure that any message that arrives at a destination site before its deadline will be delivered to the application before the message expires. In addition, by focusing on a form of causal ordering violations caused by “the triangle inequality”, this algorithm has a low overhead with respect to the amount of information that must be appended to each message. This revised version was published online in June 2006 with corrections to the Cover Date.  相似文献   
69.
The Kernighan/Lin graph partitioning heuristic, also known as min-cut or group migration, has been extended over several decades very successfully for circuit partitioning. Those extensions customized the heuristic and its associated data structure to rapidly compute the minimum-cut metric central to circuit partitioning; as such, those extensions are not directly applicable to other problems. In this paper, we extend the heuristic for functional partitioning, which in turn can solve the much investigated codesign problem of partitioning a system's coarse-grained functions among hardware and software components. The key extension customizes the heuristic and data structure to rapidly compute execution-time and communication metrics, crucial to hardware and software partitioning, and leads to near-linear time-complexity and excellent resulting quality. Another extension uses a new criteria for terminating the heuristic, eliminating time-consuming and unnecessary fine-tuning of a partition. Our experiments demonstrate extremely fast execution times (just a few seconds) with results matched only by the slower simulated annealing heuristic, meaning that the extended Kernighan/Lin heuristic will likely prove hard to beat for hardware and software functional partitioning.  相似文献   
70.
CMOS scaling into the nanometer regime   总被引:11,自引:0,他引:11  
Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling  相似文献   
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