A Digital Deformation Vacuum Gauge with an LC-Generator

The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 10⁵. The instruments developed cover the ranges 10³, 10⁴, and 10⁵ Pa.     

Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Unified Systolic-Like Architecture for DCT and DST Using Distributed Arithmetic

A common computing-core representation of the discrete cosine transform and discrete sine transform is derived and a reduced-complexity algorithm is developed for computation of the proposed computing-core. A parallel architecture based on the principle of distributed arithmetic is designed further for the computation of these transforms using the common-core algorithm. The proposed scheme not only leads to a systolic-like regular and modular hardware for computing these transforms, but also offers significant improvement in area-time efficiency over the existing structures. The structure proposed here is devoid of complicated input/output mapping and does not involve any complex control. Unlike the convolution-based structures, it does not restrict the transform length to be a prime or multiple of prime and can be utilized as a reusable core for cost-effective, memory-efficient, high-throughput implementation of either of these transforms     

The radiation resistance of an arbitrarily oriented electric dipole exciting a corner antenna or a plane screen

Rigorous analytic expressions for radiation resistance R _Σ of an electric dipole are obtained for three mutually orthogonal orientations of the dipole’s axis with respect to a plane metal screen or right-angle corner of infinite dimensions. Radiation resistance R _Σ of the dipole oriented arbitrarily in space is calculated and analyzed as a function of the distance from the screen.     

Multi-level attention model for tracking and segmentation of objects under complex occlusion

A multi-level attention framework for tracking and segmentation of humans and objects under complex occlusions is investigated, featuring an effective probabilistic appearance-based technique for pixel reclassification during object grouping and splitting. A novel ’spatial-depth affinity metric’ is introduced in the conventional likelihood function, utilising information of both spatial locations of pixels and dynamic depth ordering of the component objects in grouping. Depth ordering estimation is achieved through a combination of top-down and bottom-up approach. Experiments on some realworld difficult scenarios of low quality and highly compressed videos demonstrate the very promising results achieved.     

Electrical Properties of GeO2–NiO Materials Containing Ni2GeO4

The GeO₂–NiO system is studied in the stability range of Ni₂GeO₄ by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined.