Purification and identification of antioxidant peptide from black pomfret, <Emphasis Type=Italic>Parastromateus niger</Emphasis> (Bloch, 1975) viscera protein hydrolysate

To utilize fish waste, black pomfret, Parastromateus niger viscera was analysed for its proximate and amino acid composition followed by hydrolysis using various proteases to extract antioxidant peptide. Antioxidant activities of the crude hydrolysate was evaluated using DPPH (54%), metal chelating (78.6%) at a concentration of 1 mg/mL, whereas the reducing power assay was done with different concentration (0.5–2.5 mg/mL) and the activity also increased with increasing concentration (0.021–0.068). Furthermore, the hydrolysate was purified by diethylaminoethyl (DEAE) ion-exchange and Sephadex G-25 gel filtration chromatography. Finally, the purified peptide had a mass of 701.9 Da, and the amino acid sequence was identified as Ala-Met-Thr-Gly-Leu-Glu-Ala using electrospray ionization-tandem mass spectrometry (ESI-MS/MS). Moreover, the protection ability of the peptide toward hydroxyl radical-induced oxidative DNA damage and inhibiting lipid peroxidation was evaluated and compared with natural antioxidant α-tocopherol.     

Dielectric properties of iron doped calcium copper titanate,CaCu<Subscript>3</Subscript>Ti<Subscript>3.9</Subscript>Fe<Subscript>0.1</Subscript>O<Subscript>12</Subscript> ceramic

Dielectric properties of iron doped CaCu₃Ti₄O₁₂ (CCTO), viz. CaCu₃Ti_3.9Fe_0.1O₁₂ (CCTFO) prepared by a novel semi-wet route have been investigated. X-ray diffraction of powder sintered at 900 °C show formation of single phase solid solution. Energy dispersive X-ray spectroscopy (EDX) confirmed the presence of CuO rich phase at grain boundaries of CCTFO. Nature of dielectric relaxation observed above room temperature is studied using complex plane impedance analysis and modulus spectroscopy. It has been found that out of the two relaxations reported earlier above room temperature, one occurring at lower temperature is due to grainboundaries interfacial polarization.     

Barrier coverage with wireless sensors

When a sensor network is deployed to detect objects penetrating a protected region, it is not necessary to have every point in the deployment region covered by a sensor. It is enough if the penetrating objects are detected at some point in their trajectory. If a sensor network guarantees that every penetrating object will be detected by at least k distinct sensors before it crosses the barrier of wireless sensors, we say the network provides k-barrier coverage. In this paper, we develop theoretical foundations for k-barrier coverage. We propose efficient algorithms using which one can quickly determine, after deploying the sensors, whether the deployment region is k-barrier covered. Next, we establish the optimal deployment pattern to achieve k-barrier coverage when deploying sensors deterministically. Finally, we consider barrier coverage with high probability when sensors are deployed randomly. The major challenge, when dealing with probabilistic barrier coverage, is to derive critical conditions using which one can compute the minimum number of sensors needed to ensure barrier coverage with high probability. Deriving critical conditions for k-barrier coverage is, however, still an open problem. We derive critical conditions for a weaker notion of barrier coverage, called weak k-barrier coverage.     

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported,to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions.This novel structure offers low barrier height at the source and offers high ON-state current.The ION/IoFF of ISE-CGAA-SB-MOS-FET increases by 1177 times and offers steeper subthreshold slope (～60 mV/decade).However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate,dual metal gate,single metal gate with ISE,and dual metal gate with ISE has been presented.The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design.The numerical simulation is performed using the ATLAS-3D device simulator.     

Dropping False Packet to Increase the Network Lifetime of Wireless Sensor Network using EFDD Protocol

In Wireless Sensor Network (WSN) sensors are densely deployed where the intruders can compromise some sensor nodes and inject false data in order to raise false alarms, reduce network lifetime, utilize bandwidth resources and so on. False Data Injection can possibly occur in Data Aggregation (DA) and Data Forwarding (DF). This paper analyses EFDD Protocol-Early False Data Detection Protocol which addresses the two possibilities in a simple and secure way considering the constraints of sensor nodes. The main idea is the selection of the network structure; this protocol will work effectively in Spatial/Semantic Correlation Tree Structure (SCT). False Data Detection in DA is done using some monitoring nodes which will monitor the Data Aggregator. EFDD in SCT structure reduce the counterfeit data transmission when compared to other structure in a better way. The result shows that EFDD reduce data transmission by dropping false data earlier and it also reduces computation when compared to the existing schemes.     

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

An analytical model of Al_0.15Ga_0.85N/GaN modulation doped field effect transistor (MODFET), which uses an accurate velocity field relationship and incorporates the dominant effect of piezoelectric polarization induced charge at the AlGaN/GaN interface is presented. The effect of traps has also been taken into account. The calculated DC characteristics are in excellent agreement with the measured data. The model is extended to predict the microwave performance of the device. High current levels (>500 mA/mm), large transconductance (160.83 mS/mm) and a high cutoff frequency (9.6 GHz) have been achieved analytically and are in close agreement with the experimental data.     

A new grounded lamination gate (GLG) for diminished fringe-capacitance effects in high-/spl kappa/ gate-dielectric MOSFETs

A grounded lamination gate (GLG) structure for high-/spl kappa/ gate-dielectric MOSFETs is proposed, with grounded metal plates in the spacer oxide region. Two-dimensional device simulations performed on the new structure demonstrate a significant improvement with respect to the threshold voltage roll-off with increasing gate-dielectric constant (due to parasitic internal fringe capacitance), keeping the equivalent oxide thickness same. A simple fabrication procedure for the GLG MOSFET is also presented.     

Reversed Temperature-Dependent Propagation Delay Characteristics in Nanometer CMOS Circuits

The supply voltage to threshold voltage ratio is reduced with each new technology generation. The gate overdrive variation with temperature plays an increasingly important role in determining the speed characteristics of CMOS integrated circuits. The temperature-dependent propagation delay characteristics, as shown in this brief, will experience a complete reversal in the near future. Contrary to the older technology generations, the speed of circuits in a 45-nm CMOS technology is enhanced when the temperature is increased at the nominal supply voltage. Operating an integrated circuit at the prescribed nominal supply voltage is not preferable for reliable operation under temperature fluctuations. A design methodology based on optimizing the supply voltage for temperature-variation-insensitive circuit performance is proposed in this brief. The optimum supply voltage is 45% to 53% lower than the nominal supply voltage in a 180-nm CMOS technology. Alternatively, the optimum supply voltage is 15% to 35% higher than the nominal supply voltage in a 45-nm CMOS technology. The speed and energy tradeoffs in the supply voltage optimization technique are also presented     

Automatic quantification of changes in bone in serial MR images of joints

Recent innovations in drug therapies have made it highly desirable to obtain sensitive biomarkers of disease progression that can be used to quantify the performance of candidate disease modifying drugs. In order to measure potential image-based biomarkers of disease progression in an experimental model of rheumatoid arthritis (RA), we present two different methods to automatically quantify changes in a bone in in-vivo serial magnetic resonance (MR) images from the model. Both methods are based on rigid and nonrigid image registration to perform the analysis. The first method uses segmentation propagation to delineate a bone from the serial MR images giving a global measure of temporal changes in bone volume. The second method uses rigid body registration to determine intensity change within a bone, and then maps these into a reference coordinate system using nonrigid registration. This gives a local measure of temporal changes in bone lesion volume. We detected significant temporal changes in local bone lesion volume in five out of eight identified candidate bone lesion regions, and significant difference in local bone lesion volume between male and female subjects in three out of eight candidate bone lesion regions. But the global bone volume was found to be fluctuating over time. Finally, we compare our findings with histology of the subjects and the manual segmentation of bone lesions.