Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon

The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (10¹⁶) and a higher level (2×10¹⁹) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si²⁸ as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping.     

用LED寻找故障的电缆测试仪

本例描述了一个简单的电缆测试仪,它能形象地显示出一根16线电缆束(用于超声辅助驻车系统)的通断问题。一家承包商小批量地生产该线束,因此不适合采用自动化测试仪。为简单起见,用测试信号驱动几只LED,形象化地表示出通断情况。图1中的电路产生一个从0至15的二进制数(0000至1111)。可     

Regularization techniques in realistic Laplacian computation

This paper explores regularization options for the ill-posed spline coefficient equations in the realistic Laplacian computation. We investigate the use of the Tikhonov regularization, truncated singular value decomposition, and the so-called lambda-correction with the regularization parameter chosen by the L-curve, generalized cross-validation, quasi-optimality, and the discrepancy principle criteria. The provided range of regularization techniques is much wider than in the previous works. The improvement of the realistic Laplacian is investigated by simulations on the three-shell spherical head model. The conclusion is that the best performance is provided by the combination of the Tikhonov regularization and the generalized cross-validation criterion-a combination that has never been suggested for this task before.     

Controlling a Semiconductor Optical Amplifier Using a State-Space Model

We derive nonlinear and linear state-space control models for a multichannel semiconductor optical amplifier. Verified against the governing partial differential equations through simulation, the linear model tracks modulations up to 20% qualitatively well. Linear feedback control is then employed to design two interchannel crosstalk suppressing systems, one using state feedback into the electronic drive current and the other using optical output feedback into an optical control channel; the controller designed with the linear model is seen to work well even with 100% modulations of the nonlinear system. This linear state-space model opens the way for further robust analysis, design and control of integrated active photonic circuits     

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al₂O₃ has been compared with similar structure consisting of Si nanocrystals in SiO₂ to validate the concept.     

3GPP LTE‐Assisted Wi‐Fi‐Direct: Trial Implementation of Live D2D Technology

This paper is a first‐hand summary on our comprehensive live trial of cellular‐assisted device‐to‐device (D2D) communications currently being ratified by the standards community for next‐generation mobile broadband networks. In our test implementation, we employ a full‐featured 3GPP LTE network deployment and augment it with all necessary support to provide real‐time D2D connectivity over emerging Wi‐Fi‐Direct (WFD) technology. As a result, our LTE‐assisted WFD D2D system enjoys the required flexibility while meeting the existing standards in every feasible detail. Further, this paper provides an account on the extensive measurement campaign conducted with our implementation. The resulting real‐world measurements from this campaign quantify the numerical effects of D2D functionality on the resultant system performance. Consequently, they shed light on the general applicability of LTE‐assisted WFD solutions and associated operational ranges.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.