Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Digitally tunable optical filters using arrayed-waveguide grating(AWG) multiplexers and optical switches

Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel     

Automatic fault detection, isolation, and recovery in transparentall-optical networks

Network fault identification is an important network management function, which is closely related to fault management and has an impact on other network management functions such as configuration management, and performance management. This paper investigates fault surveillance and fault identification mechanisms for a transparent optical network in which data travels optically from the source node to the destination node without going through any optical-to-electrical (O/E) or electrical-to-optical (E/O) conversion. Mechanisms and algorithms are proposed to detect and isolate faults such as fiber cuts, laser, receiver, or router failures. These mechanisms allow nonintrusive device monitoring without requiring any prior knowledge of the actual protocols being used in the data transmission     

A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

Series equivalence/operation of current-controlled boost-typesingle-phase voltage source converters for bidirectional power flow

Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Brennstoffzellen

For two applications of fuel cells (SOFC and IMFC) system configurations and energy balances are presented. A decentralized combined heat and power plant on SOFC basis can be designed as a flexible system with high efficiency. A drive system with methanol reformer and fuel cell (IMFC) in comparison with a natural gas combustion engine has lower energy comsumption and much lower emissions.     

A phenomenological model for giant magnetoresistance hysteresis inmagnetic discontinuous multilayer films

A simple phenomenological model for giant magnetoresistance (GMR) is employed for current and field parallel (CIP) to the magnetic multilayer planes in ordinary and discontinuous multilayer films. To our knowledge, it is the first model to include hysteresis in the field (H) dependence of the GMR. The computed GMR versus H curves qualitatively reproduce the GMR hysteresis seen experimentally. In particular, two GMR peaks are found to be symmetrically placed about H=0, and the GMR hysteresis curve itself is found to have an inverted butterfly shape. Also seen in the computed results is the general increase in GMR magnitude found for annealed discontinuous multilayer films. Various parameter variations are examined in the computed results. While the model reproduces GMR hysteresis quite well and the general increase in GMR for discontinuous multilayer films, it does not, in its present form, account for the oscillations seen in the GMR when the nonmagnetic layer thicknesses are varied, which is expected as a strictly quantum mechanical result     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.