Wavelength and Waveband Assignment for Ring Networks Based on Parallel Multi‐granularity Hierarchical OADMs

In this paper we study the optimization issues of ring networks employing novel parallel multi‐granularity hierarchical optical add‐drop multiplexers (OADMs). In particular, we attempt to minimize the number of control elements for the off‐line case. We present an integer linear programming formulation to obtain the lower bound in optimization, and propose an efficient heuristic algorithm called global bandwidth resource assignment that is suitable for the design of large‐scale OADM networks.     

交叉试验

发生了质量事故,是设备、操作等硬件的缘故,抑或药液的缘故?通过交叉试验的故事,把真相找了出来。     

胡桃夹子

富于节日喜庆气氛的芭蕾舞剧《胡桃夹子》录音、录像繁多。这个伦敦科文特花园歌剧院芭蕾舞团的2000年的现场录像与其它版本比较，     

陆东凹陷油气藏烃类组成非均质性及其意义

陆东凹陷原油和油砂抽提物中烃类的宏观组成存在着明显的非均质性。在高孔隙度(>15%)储层单元中,饱和烃的含量高,占总组成的含量均大于40%,而极性化合物则相对较低,一般不足40%;相反,在低孔隙度(<15%)储层单元中,饱和烃的含量明显降低,而极性化合物则显著增加。此外,陆东凹陷原油和油砂抽提物中烃类成熟度亦存在着非均质性:在高孔隙度储层中,原油和油砂烃类的成熟度参数高,而在低孔隙度储层中原油和油砂烃类的成熟度参数低。根据原油和油砂抽提物中烃类的宏观组成特征和成熟度参数的变化规律,提出了陆东凹陷油气聚集模式。     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

应用TEXTIO和MATLAB进行复杂数字系统仿真

在基于FPGA的复杂数字系统的仿真测试中,设计者常常面临各种挑战.以数字图像处理系统的仿真为例,如果采用完备性仿真测试方法,那么测试矢量的数量将是非常巨大的;如果采用常规方法,不仅效率不高,而且可能无法达到仿真测试的目的.针对这个难题,提出一种进行仿真测试的新方法,该方法应用TEXTIO和MATLAB来辅助仿真测试过程,使问题得到较好的解决.以电视图像实时多目标捕获单元的仿真测试为例,全面、细致地讨论这种新方法.     

Effect of oxygenation on electrocatalysis of La0.6Ca0.4CoO3−x in bifunctional air electrode

A vacuum-annealed La_0.6Ca_0.4CoO_3−x was consecutively oxygenated in air at temperatures decreasing from 800 to 100 °C, and its electrocatalytic activities for oxygen reduction and evolution were then measured as a function of the oxygenation temperature. The valence of Co cation, changing between +2 and +3, was found susceptible to annealing either in vacuum or air. The catalytic activities initially decrease monotonically as the oxygenation temperature was decreased from 800 to 300 °C, as a result of increasing oxygen content, and then rise abruptly with the oxygen reduction activity reaching a maximum at 200 °C and the oxidation activity at 150 °C. X-ray photoelectron spectroscopy analysis indicated that the enhancements by the low-temperature oxygenation involved increased OH coverage and less charged cations at surface. The results clearly reveal the importance of the post-calcination annealing process for optimizing the performance of La_0.6Ca_0.4CoO_3−x in air electrode applications.     

一种微透镜阵列的研制

介绍一种利用表面张力的作用、以光纤作材料、用分离的自聚焦透镜制作微透镜阵型的方法，这种方法具有制作工艺简单、无须昂贵设备等优点，用此方法实际制作了具有良好连续面型的微透镜阵列，并对制作的微透镜阵列进行了测试，效果较好。     

硫化氢吸收液的电化学分解条件研究

理想的脱硫工艺应满足体积小、费用低、净化度高、无二次污染等要求。在碱性溶液吸收微量硫化氢时同步进行电解，可有效减小设备体积，并将硫化氢转变为氢气和硫磺，不产生恶性气味。为此，实验研究了温度、浓度、电流密度、pH值等因素对电解阳极过程的影响，确定了适宜的电解条件，并在该条件下进行了吸收实验。结果表明，在最佳电解条件下，硫化钠溶液能充分吸收天然气中经变压吸附提浓的硫化氢（800 mg/m³），吸收率大于99.9％。     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.