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101.
102.
Eladio J. Rivera Richa Sethi Feifei Qu Ramkumar Krishnamurthy Raja Muthupillai Michael Alford Michael A. Swanson Sandra S. Eaton Gareth R. Eaton Lon J. Wilson 《Advanced functional materials》2012,22(17):3691-3698
The encapsulation of nitroxide radicals within ultrashort (ca. 50 nm) single‐walled carbon nanotubes (US‐tubes) is achieved. Tempo‐ and Iodo‐Tempo@US‐tubes are characterized by thermogravimetric analysis (TGA), X‐ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Electron paramagnetic resonance (EPR) spectra display characteristic signals due to the detection of the spin probes within the US‐tubes. Longitudinal proton relaxivities (r1) of both nitroxide@US‐tubes samples are 7 to 13 times greater than the free nitroxide radicals in solution, giving relaxivities comparable to the clinical contrast agent (CA) Magnevist. In addition, transverse proton relaxivities (r2) show unprecedented proton relaxation enhancement in comparison to any other reported nitroxide radical‐based system or the clinically approved T2 CA, Resovist, under the same conditions. T2‐weighted magnetic resonance imaging (MRI) phantom images show that the encapsulation of nitroxide radicals within the US‐tubes produces good contrast enhancement due to their high r2 relaxivities. The nitroxide radicals@US‐tube agents are a new promising class of spin probes for MRI and electronic paramagnetic resonance imaging (EPRI) labeling, tracking, and diagnosis. 相似文献
103.
Chunya Du Hui Liu Zhuang Cheng Shaoqin Zhang Zexing Qu Dezhi Yang Xianfeng Qiao Zujin Zhao Ping Lu 《Advanced functional materials》2023,33(45):2304854
The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m−2 with a Commission International de L'Eclairage (CIEy) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m−2, and even at a brightness as high as 10000 cd m−2, an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m−2. The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m−2. Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen. 相似文献
104.
重力谷糙分离机的工作面是往复振动的双向倾斜面,根据文献中提出的定量计算该工作面上物料运动的方法,计算并列出了上层物料运动状况的数据和曲线,并归纳了物料运动的特征。通过分析,说明各种运动参数的数据是互相对应,吻合和合乎运动学,动力学的规律,从而也证明了笔者所提出的定量分析方法的正确性。 相似文献
105.
A microstrip lowpass filter with enhanced performance is developed. The studied filter is based on a novel patch resonator that features strong slow-wave effects, and can also implement either an improved roll-off or an enhanced stop-band. A demonstrator filter with 3 dB cutoff frequency fc ? 2.4 GHz is optimally designed, fabricated and measured. Results indicate that a roll-off of 92.5 dB/GHz together with a relative stop-band bandwidth of 135.5% (referred to a 30 dB suppression) is obtained while achieving a highest figure-of-merit of 10106. Both simulations and measurements are presented and compared. 相似文献
106.
为分析高空紫外光通信性能,建立了高空太阳辐射分布模型;研究了不同波长紫外光的高空散射系数和吸收系数;考虑太阳辐射的背景光和接收端散粒噪声,对紫外光直视与非直视链路的损耗和信噪比进行了仿真分析.结果表明:在高空30 km以下,由太阳辐射产生的背景光远小于接收端散粒噪声;在7 km的高度上280 nm的信号光可实现距离为5 km、速率为10Mb/s的直视通信和距离1 km、速率50 kb/s、收发端仰角为20°的非直视通信.直视与非直视通信可以通过选择波长在“日盲区”两端的信号来减小臭氧对紫外光的吸收作用,提高信噪比;非直视通信还可以选择“日盲区”波长短的信号来增强散射效应,改善通信性能. 相似文献
107.
As a large family of 2D materials, transition metal dichalcogenides(TMDs) have stimulated numerous works owing to their attractive properties. The replacement of constituent elements could promote the discovery and fabrication of new nanofilm in this family. Using precious metals, such as platinum and palladium, to serve as transition metals combined with chalcogen is a new approach to explore novel TMDs. Also, the proportion between transition metal and chalcogen atoms is found not only to exist in conventional form of 1 : 2. Herein, we reported a comprehensive study of a new 2D precious metal selenide, namely AuSe monolayer. Based on density functional theory, our result indicated that AuSe monolayer is a semiconductor with indirect band-gap of 2.0 eV, which possesses superior dynamic stability and thermodynamic stability with cohesive energy up to–7.87 eV/atom. Moreover, it has been confirmed that ionic bonding predominates in Au–Se bonds and absorption peaks in all directions distribute in the deep ultraviolet region. In addition, both vibration modes dominating marked Raman peaks are parallel to the 2D plane. 相似文献
108.
Cuncun Wu Duo Wang Yuqing Zhang Feidan Gu Ganghong Liu Ning Zhu Wei Luo Dong Han Xuan Guo Bo Qu Shufeng Wang Zuqiang Bian Zhijian Chen Lixin Xiao 《Advanced functional materials》2019,29(34)
Compared with silicon‐based solar cells, organic–inorganic hybrid perovskite solar cells (PSCs) possess a distinct advantage, i.e., its application in the flexible field. However, the efficiency of the flexible device is still lower than that of the rigid one. First, it is found that the dense formamidinium (FA)‐based perovskite film can be obtained with the help of N‐methyl‐2‐pyrrolidone (NMP) via low pressure‐assisted method. In addition, CH3NH3Cl (MACl) as the additive can preferentially form MAPbCl3?xIx perovskite seeds to induce perovskite phase transition and crystal growth. Finally, by using FAI·PbI2·NMP+x%MACl as the precursor, i.e., ligand and additive synergetic process, a FA‐based perovskite film with a large grain size, high crystallinity, and low trap density is obtained on a flexible substrate under ambient conditions due to the synergetic effect, e.g., MACl can enhance the crystallization of the intermediate phase of FAI·PbI2·NMP. As a result, a record efficiency of 19.38% in flexible planar PSCs is achieved, and it can retain about 89% of its initial power conversion efficiency (PCE) after 230 days without encapsulation under ambient conditions. The PCE retains 92% of the initial value after 500 bending cycles with a bending radii of 10 mm. The results show a robust way to fabricate highly efficient flexible PSCs. 相似文献
109.
Bao-Min Wang Yu-Long Jiang Xin-Ping Qu Bing-Zong Li Ran Liu 《Microelectronic Engineering》2008,85(10):2032-2036
This paper investigates the effects of Ho and Er on the sheet resistance and crystallinity of Ni(Ho) and Ni(Er) silicides, the work function (WF) modulation of Ni(Ho) and Ni(Er) fully silicided (FUSI) gate electrodes on SiO2 dielectric, and the FUSI gated SiO2/Si interface trap properties by using high-frequency capacitance-voltage (C-V) and photonic high-frequency C-V measurements. It was found that as the thickness percentage of rare earth (RE) metal in the Ni(Ho) or Ni(Er) increases, the sheet resistance of the silicide increases. The crystallinity decreases in the Ni(Ho) and Ni(Er) silicides, and the crystallinity decreases as the Ho thickness percentage increases. As the thickness percentage of Ho in the Ni(Ho) increases from 13% to 30%, the flatband voltage (VFB) shift increases from −0.19 to −0.27 V. The VFB shifts negatively 0.17 V due to 10% Er incorporation in the Ni(Er). The VFB shift can be attributed to the effective WF decrease which may be due to the crystallinity decrease of Ni(Ho) and Ni(Er) FUSI. The interface trap density Dit calculated from the photonic high-frequency C-V curves is in good agreement with that calculated from the high-frequency and photonic high-frequency C-V curves. The Ho or Er addition does not increase the Dit. 相似文献
110.
多TDI CCD拼接相机在异速工作模式下,不同通道的CCD图像间会存在相互干扰现象,不同行频差会在图像上产生不同斜率、不同宽度的干扰斜条纹。为了解决此问题,文中对原设计电路系统进行了详细分析和优化设计。首先,从异速时序在不同行周期的相位差别上进行分析,异速模式下不同CCD成像电路时序间存在行频差异,导致各个行周期内CCD个别像元上与其他像元叠加的干扰不一致,是干扰斜条纹产生的原因。然后,采取优化关键信号布线方式、系统地和电源布置、去耦电容接地方式等多方面对电路系统进行了改进,优化多TDI CCD成像系统电路抗异速干扰设计。最后,对改进后的电路系统进行测试,去除干扰斜纹,并将图像均方根噪声水平由21.5 mV降低到4.2 mV。结果表明:采用抗干扰技术,有效地去除了通道间干扰斜纹,提高了图像质量。 相似文献