Drug use, violence, and victimization among White American, Mexican American, and American Indian dropouts, students with academic problems, and students in good academic standing.

Problem-prone behaviors of White American, Mexican American, and American Indian high school dropouts, students in good academic standing, and students in poor academic standing were surveyed. Generally, dropouts were most involved with drugs, perpetration of violence, and victimization by violence, students in poor standing were the next most involved, and students in good standing were least involved. Ethnicity did not interact with academic status, suggesting that differences between dropouts and students were similar across ethnic groups. Some ethnicity and gender main effects were found. Findings were related to R. Jessor's (see record 1992-23064-001) theory of problem-prone behaviors, to peer cluster theory, and to intervention design. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Activation of alphav beta3 integrin on human osteoclast-like cells stimulates adhesion and migration in response to osteopontin

Integrins mediate cell adhesion and can induce different cellular responses, including changes in intracellular pH, changes and oscillation in intracellular free calcium, and protein phosphorylation on tyrosine. During bone resorption, the integrin alphav beta3 regulates adhesion of osteoclasts to bone extracellular matrix proteins, such us osteopontin (Opn). Adhesion via alphav beta3 is followed by osteoclast polarization onto the bone surface and by the onset of bone resorption. To characterize these events at the molecular level, we investigated the state of activation of alphav beta3 on the human osteoclast-like cell line GCT23 using the monoclonal antibody AP5 which binds to and can induce, under low calcium conditions, activated alphav beta3. By flow cytometry, approximately 50% of alphav beta3 on the surface of the osteoclast-like cell line GCT23 was reactive with AP5 and was therefore in the activated state. Incubation with AP5 in the presence of low calcium concentrations increased activated alphav beta3 to 90-100%. Activation of alphav beta3 increased the efficiency of GCT23 adhesion to Opn by 2-fold. Furthermore, haptotactic migration on Opn was also enhanced about 40% compared to control. We propose that changes in the activation state of alphav beta3 may be a regulation point for osteoclasts during bone resorption.     

Transport properties of Nd1.85Ce0.15 δ single crystals: The narrow-band model

The anisotropy of the resistivity and thermoelectric power (TEP)S of Nd_1.85Ce_0.15CuO_4?δ single crystal (T _c =17 K) has been investigated. In the temperature rangeT _c <T<300 K the ratioρ _c/ρ_ab≈10⁴ and the dependencesρ _ab (T) andρ _c (T) change from quadratic to linear atT～200 K. The dependencesS _ab (T) andS _c (T) reach a maximum atT>T _c and then decrease almost linearly with increasing temperature, changing sign from positive to negative nearT～ 150 K. The features of the resistivity and TEP temperature dependences (the lawρ∝T ² changing toρ∝T, the change in the sign of S with temperature, and the low TEP anisotropy at largeρ anisotropy) have been interpreted in the framework of the narrow-band model.     

Nursing at the crossroads

Crossroads is the term used to describe nursing's decisional grid in the post health care reform era. Four avenues of practice are laid out. Nursing's decision about clinical pathways will contribute to the future of professional nursing and help shape health care delivery.     

Gene amplification in Chinese hamster DNA repair deficient mutants

In order to study the possible relationship between gene amplification and DNA repair we analyzed the amplification of the CAD gene in four mutants hypersensitive to UV light (CHO43RO, CHO7PV, UV5 and UV61) isolated in vitro from Chinese hamster cell lines (CHO-K1 and AA8). These mutants are characterized by different defects in the nucleotide excision repair mechanism and represent complementation groups 1, 9, 2, and 6 respectively. To evaluate the amplification ability of each cell line we measured the rate of appearance of PALA resistant clones with the Luria and Delbrück fluctuation test. Resistance to PALA is mainly due to amplification of the CAD gene. In the mutants CHO43RO, UV5 and CHO7PV we reproducibly found an amplification rate lower than in the parental cell lines (2-5 times), while in UV61 the amplification rate was about 4 times higher. This result indicates that each mutant is characterized by a specific amplification ability and that the unefficient removal of UV induced DNA damage can be associated with either a higher or a lower amplification rate. However, the analysis of randomly isolated CHO-K1 clones with normal UV sensitivity has shown variability in their amplification ability, making it difficult to relate the specific amplification ability of the mutants to the DNA repair defect and suggesting clonal heterogeneity of the parental population.     

A methodology for assessing gamebird use of short rotation coppice

Gamebirds provide a considerable incentive to plant and manage new woodlands. The supplementary income thus generated can improve their overall value. Other studies suggest that Short Rotation Coppice (SRC) crops may provide an attractive habitat for some gamebird species and could increase the value of the crop. To investigate this, the use by pheasants and partridge of different types of SRC at one site was assessed.

A method using sand quadrats to record gamebird footprints and hence relative use was developed. Pheasant footprints were recorded more frequently in the quadrats alongside the willow coppice, whereas partridge footprints occurred more frequently alongside the poplar coppice. Footprint analysis offers a reliable method of investigating how gamebirds use different types of SRC within small areas. The results are considered in terms of the placement of short rotation coppice plantations in the landscape to improve their ecological design.     

Crystallographic shear planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

Atomic structures of crystallographic shear planes (CSPs) in nanocrystalline thin films of semiconductor SnO₂ were investigated by high-resolution electron microscopy. The films were prepared by electron beam evaporation in high vacuum (10^–6 torr) and followed by annealing in synthetic air at 700 °C for 1–2 H. CSPs with the displacement vector of [1/2 0 1/2] were observed in the planes parallel to (¯101), (110) and (¯3¯21). Most of the CPSs were found to terminate or interact with each other within SnO₂ crystallites. Partial dislocations exist at terminal places of CSPs or along intersecting lines of CSPs. CSP steps were also observed. Structural models of these defects have been proposed. Based on analysis of experimental data, it has been suggested that the Sn/O ratio at CSPs which are not parallel to their displacement vector, at cores of partial dislocations and at CSP steps, is higher than that of the perfect structure, that is, these defects are able to provide extra free electrons with the films.