Application of convolutional error correcting codes in ultrawideband M-ary PPM signaling

The interference issues related to ultrawideband (UWB) radio pose tight restrictions on the maximum data rate of UWB radio telecommunication systems. A possible solution is to reduce the required signal to interference ratio (SIR) that gives satisfactory performance to the UWB system. In this letter, we propose coded M-ary UWB radio communication systems. Two classes of convolutional codes, namely, low-rate superorthogonal codes and high-rate punctured codes are considered for this purpose. Simulation results on the bit error rate of the proposed system indicates that the system is capable to work in lower SIR's and therefore supports higher data transmission rates in a real interference environment compared to the previously proposed UWB communication systems.     

Reducible rank codes and their applications to cryptography

We present a new family of so-called reducible rank codes which are a generalization of rank product codes . This family includes maximal rank distance (MRD) codes for lengths n>N in the field F/sub N/. We give methods for encoding and decoding reducible rank codes. A public key cryptosystem based on these codes and on the idea of a column scrambler is proposed. The column scrambler "mixes" columns of a generator (parity-check) matrix of a code. It makes the system more resistant to structural attacks such as Gibson's attacks. Possible attacks on the system are thoroughly studied. The system is found to be secure against known attacks for public keys of about 16 kbits and greater.     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Using the magneto-optical Kerr effect to study magnetization processes in two-dimensional magnonic crystals based on YIG thin films

The magneto-optical Kerr effect for red (628 nm) and green (532 nm) light is used to study magnetization processes in 2D magnonic crystals obtained by etching pits with the diameter D ≈ 32 μm to a depth of t ≤ 2 μm in a 16.1-μm-thick film of yttrium iron garnet (YIG). Hysteresis loops obtained in the case of the inplane crystal magnetization at 628 nm are characterized by lower saturation fields H _s and higher remanent magnetizations than those obtained at 532 nm, a result that is attributed to different absorption coefficients of the YIG film at these wavelengths. This difference between the magnetization curves reflects the fact that the magnonic-crystal surface probed with the green light makes a greater contribution to the magneto-optical Kerr effect. Therefore, the green light is more sensitive to the demagnetizing fields, which govern magnetization processes in the magnonic crystals.     

Nondegenerate Phase-Locking of a Semiconductor Laser by Sideband Injection

A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating     

Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.