CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

关于非线性浅水波理论中的孤立波解

本文在[1]的基础上,详尽地得到了Boussinesq方程和KdV方程的孤立波解,并对波高和波形进行了细致的分析。为了更好地比较,本文还给出了高阶摄动的孤立波解。     

The intracorporeal ultraviolet irradiation of the blood and its effect on the immune status in patients with a surgical infection

A dynamic investigation was done of the immunologic status in 75 patients with purulent surgical lesions of soft tissues. Applied in the complex of therapeutic measures was intracorporeal irradiation of blood with ultraviolet light under control of partial pressure of oxygen and carbon dioxide. The above irradiation was found out to make for a more rapid and marked stabilization of bodily immunologic status.     

Passive immune protection of turkeys against Coryza

Antisera made against whole cells of Bordetella avium protected turkeys against disease signs of turkey coryza, but antiserum against the dermonecrotic heat-labile toxin (DHLT) did not. Neither antiserum against whole cells nor antiserum against DHLT protected turkeys against colonization of the trachea by B. avium. At least 25 bands in whole cell lysate of B. avium separated by sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) reacted in immunoblots with protective antiserum. These bands occurred at < 40 kDa and > 105.3 kDa. DHLT had an isoelectric point (pI) in the range pH 6.3-6.7. Following SDS-PAGE of isoelectric-focused fractions, two bands were recognized by anti-DHLT with immunoblots of pI 6.3, pI 6.5, and pI 6.7 fractions separated by SDS-PAGE.     

圩区排涝模数计算方法研究

合理确定圩区排涝模数对于降低涝灾损失有重要意义。圩区内土地利用性质的不同,会导致产汇流机制和排涝标准的不同,但排涝模数的计算方法基本一致。本文根据圩区下垫面条件进行产汇流计算,入河流量扣除滞蓄量得到排涝模数,充分考虑到圩内河道的调蓄作用。以常熟市为例,对城镇圩区、农业圩区排涝模数进行计算,并分析了两种圩区不同的排涝要求对排涝模数计算方法的影响。     

三维频率复用环境中的信道偏移指配方法

一种新的信道指配法－信道偏移指配方法正受到越来越多的重视，这种方法能在现有的频率资源条件下，较大地提高移动通信系统的容量。本文主要讨论了三维频率复用环境中的信道偏移指配方法，详细地分析了同频复用和相邻信道使用距离，定量地计量了信道偏移系统的频谱节约效率。本文最后还通过几个实例验证了所提算法的实用性。     

我国有线电视事业的现状和发展

本文详细系统地介绍了我国有线是视发展历史和现状，及其经营和管理方法。重点介绍了北美的ＣＡＴＶ技术发展动向。最后，指出我国ＣＡＴＶ事业发展中的应用重视的问题。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate