Weidmüller Ein-Bolzen-Klemme

ProdukteW-Reihe Gem?ss en 50 124-1

Weidmüller Ein-Bolzen-Klemme     

Hautbr?unung und Lichtschutz -Grundlagen, Wirkstoffe und analytische Aspekte

Ohne Zusammenfassung

---

Skin tanning and light protection - theory, agents and analytical aspects

     

Simplified Large‐Area Manufacturing of Organic Electrochemical Transistors Combining Printing and a Self‐Aligning Laser Ablation Step

A hybrid manufacturing approach for organic electrochemical transistors (OECTs) on flexible substrates is reported. The technology is based on conventional and digital printing (screen and inkjet printing), laser processing, and post‐press technologies. A careful selection of the conductive, dielectric, and semiconductor materials with respect to their optical properties enables a self‐aligning pattern formation which results in a significant reduction of the usual registration problems during manufacturing. For the prototype OECTs, based on this technology, on/off ratios up to 600 and switching times of 100 milliseconds at gate voltages in the range of 1 V were obtained.     

Comparative characterization of chip to epoxy interfaces by molecular modeling and contact angle determination

An investigation of interfacial interaction has been performed between three epoxy molding compound materials and a native silicon dioxide layer (SiO₂) usually found at chip surfaces. The epoxy materials were an industry oriented epoxy molding compound Epoxy Phenol Novolac (EPN), its filled variety EPN^F (with silica particles) and a model aromatic epoxy¹ (2 1 2). All systems are described in full in [1] and [2]. The free surfaces of the solid materials were experimentally analyzed by contact angle measurements of three different liquids (water, methylene-iodide (MI) and glycerol). Results are compared to interfacial energies obtained by analysis of the interfaces in bimaterial molecular models, yielding reasonable agreement. A qualitative prediction regarding the influence of water on the interfacial strength between chip and molding compound is attempted.     

Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient

The influence of N₂O oxynitridation and oxidation pressure on reliability of ultrathin gate oxides from 4 down to 2.5 nm thickness was investigated. A set of different oxidation parameters was applied during oxide growth which comprised oxidation pressure and N₂O partial pressure during rapid thermal oxidation. The reliability of the oxides was tested by constant voltage stress. Evaluation of the resulting times to soft breakdown (t_sbd) for different stress voltages allows to predict a supply (gate) voltage V^10y,max providing an oxide lifetime of 10 years. For this extrapolation, t_sbd was assumed to increase exponentially as stress voltage is reduced. The slope of the extrapolation is found to become steeper as oxides become thinner, which implies higher V^10y,max and thus higher reliability for thinner oxides as under an assumption of a uniform slope for all thicknesses. Further, the results of this extrapolation demonstrate that oxidation in N₂O containing ambient can improve oxide reliability for ultrathin gate oxides.     

trans-dominant mutations in the GPR1 gene cause high sensitivity to acetic acid and ethanol in the yeast Yarrowia lipolytica

Acetate non-utilizing strains harbouring trans-dominant mutations in the GPR1 gene (GPR1(d)) of the dimorphic yeast Yarrowia lipolytica have been selected and characterized. These mutants are highly sensitive to low concentrations of acetic acid and ethanol, even in presence of glucose. The toxic effect of acetic acid is pH-dependent and has the strongest effect at low pH. In contrast, the action of ethanol is pH-independent. One GPR1(d) mutant has been detected that was highly sensitive to acetic acid but could still grow on ethanol, which indicates putative differences in the function of the GPR1 gene product in the sensitivity to acetic acid and ethanol. The GPR1(d) mutants exhibit a complex pleiotropic phenotype. The mutations cause changed colony morphology as well as dimorphism of cells, and induce early cell death during growth on glucose, even without the presence of dicarbon compounds. Composition of intracellular membranes, as well as morphology of vacuole and mitochondria, were strongly changed. Back-crosses with wild-type strains and analysis of recombinant strains have shown that the expression of the pleiotropic phenotype depends on the site of mutation in the GPR1 gene, as well as on the genetic background of the strain harbouring the responsive mutation. Our data suggest that Gpr1p is involved in a general response of cells to the toxic action of dicarbon compounds like acetic acid and ethanol.     

Design aspects of MOS-controlled thyristor elements: technology,simulation, and experimental results

2.5-kV thyristor devices have been fabricated with integrated MOS controlled n⁺-emitter shorts and a bipolar turn-on gate using a p-channel DMOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 μm were implemented in one- and two-dimensional arrays with up to 20000 units. The impact of the cell pitch on the turn-off performance and the on-state voltage was studied for arrays with constant cathode area as well as for single-cell structures. By realizing MOS components with submicrometer channel lengths, scaled single cells are shown to turn off with current densities of several kiloamperes per square centimeter at a gate bias of 5 V. In the case of multi-cell ensembles, turn-off performance is limited due to inhomogeneous current distribution. Critical process parameters as well as the device behavior were optimized through multidimensional numerical simulation     

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint lithography (UV NIL) as a high-resolution, low-cost patterning technique for research and industry into electron device manufacturing. Additionally, UV NIL processes have to be compatible with conventional silicon (Si) semiconductor processing. Within this work, the minimization of the residual layer thickness by using a multi-drop ink-jet system, which was integrated into the imprint stepper NPS300 from S-E-T-(formerly SUSS MicroTec), in combination with a low viscous UV polymer from Asahi Glass Company is shown. The etch resistance of different UV polymers against the poly-Si etch process was increased by 50% with an appropriate post-exposure bake. A poly-Si dry etch process was used to pattern the gates of short channel MOSFETs. After optimizing the poly-Si etch, properly working short channel MOSFETs with a minimum gate length of about 90 nm were fabricated demonstrating successfully the compatibility of UV NIL with conventional Si semiconductor processing on nanosized scale.