A high image quality organic light‐emitting diode display with motion blur reduction for ultrahigh resolution and premium TVs

In this paper, we present a high image quality organic light‐emitting diode (OLED) display with motion blur reduction technology. Our latest work includes driving method that reduces motion blur using an adaptive black data insertion, brightness compensation technology, the simple structure pixel with low capacitance coupling for horizontal noise, and the multifunction integrated gate driver. The moving picture response time (MPRT) value of the OLED display panel with a fast response time was significantly affected by the frame frequency and the compensation driving method. The MPRT value of the large‐size OLED display panels was significantly decreased by using the integrated gate driver circuit with an MPRT reduction method. The decrease in the MPRT value originated from the turning of the emitting pixels off in advance resulting from providing black data. The integrated gate drivers were designed to achieve the normal display, the black data insertion, and the compensation mode. The MPRT value of the 65‐in. ultrahigh‐definition (UHD) OLED panels was decreased to 3.4 ms by using an integrated gate driver circuit. The motion blur of large‐size OLED display panels was significantly reduced due to a decrease in the MPRT value.     

Dual‐Phase Engineering of Nickel Boride‐Hydroxide Nanoparticles toward High‐Performance Water Oxidation Electrocatalysts

The development of earth‐abundant and efficient oxygen evolution reaction (OER) electrocatalysts is necessary for green hydrogen production. The preparation of efficient OER electrocatalysts requires both the adsorption sites and charge transfer on the catalyst surface to be suitably engineered. Herein, the design of an electrocatalyst is reported with significantly enhanced water oxidation performance via dual‐phase engineering, which displays a high number of adsorption sites and facile charge transfer. More importantly, a simple chemical etching process enables the formation of a highly metallic transition boride phase in conjunction with the transition metal hydroxide phase with abundant adsorption sites available for the intermediates formed in the OER. In addition, computational simulations are carried out to demonstrate the water oxidation mechanism and the real active sites in this engineered material. This research provides a new material design strategy for the preparation of high‐performance OER electrocatalysts.     

Handling noise in textual image resolution enhancement using online and offline learned dictionaries

International Journal on Document Analysis and Recognition (IJDAR) - The resolution enhancement of textual images poses a significant challenge mainly in the presence of noise. The inherent...     

Identification of dynamic stiffness of ball bearing joints using sensitivity analysis

Natural frequencies are used to identify the joint stiffness of a shaft-bearing system, where the shaft is assumed as a Rayleigh beam and the bearing as a linear spring. The eigenvalues for the case of uniform circular shaft are derived in a rigorous manner in terms of nondimensionalized parameters for the location of bearngs, bearing stiffness, and slenderness of the shaft. Then, sensitivities of the eigenvalues are calculated with respect to the stiffness ratio of shaft and bearing and the bearing location. Based upon these sensitivity charts, an iterative procedure is proposed to identify the bearing stiffness in an optimum sense. The step by step procedure is illustrated through a case study for a simple shaft-bearing system, where the stiffness of a set of ball bearings is successfully identified.     

A high-speed, high-sensitivity silicon lateral trench photodetector

We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS transimpedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias     

The Sources and Directions of Technological Capability Accumulation in Korean Semiconductor Industry

In this paper we analyze the technological accumulation processes in the Korean semiconductor industry from the institutional approach. Institutional approach, which is closely connected with Neo-Schumpeterian tradition, has emerged as an alternative theoretical framework to neoclassical approach to understand the process of producing technological knowledge. Traditional wisdom of neoclassical approach revealed the limitation to explain the complex nature of knowledge creation and diffusion. US patent data are analyzed in terms of the increasing trend of numbers and its content to measure the rate and direction of technological capability accumulation. This analysis shows that semiconductor technologies are one of the fastest growing fields among Korean technological activities. Moreover, the analysis of patent content suggests that fabrication technologies are the most important area within the technological development of semiconductors, whilst circuit design and testing technologies are beginning to increase in significance. In addition, it is examined how private sectors and public institutions have contributed to generate technological capabilities, and the relationship between them has been changed during the development processes. It is found that Korean firms enhanced their technological capabilities from the learning and assimilation of imported technology to enhanced in-house R&D capabilities in the later stage. The support of public institution and government policy also played significant role to this successful transformation in conjunction with the vigorous R&D investment of public sector.     

Novel zero-voltage-transition current-fed full-bridge PWM converterfor single-stage power factor correction

A novel zero-voltage-transition (ZVT) current-fed full-bridge pulsewidth modulation (PWM) power converter for single-stage power factor correction (PFC) is presented to improve the performance of the previously presented ZVT converter. A simple auxiliary circuit which includes only one active switch provides a zero-voltage-switching (ZVS) condition to all semiconductor devices (two active switches are required for the previous ZVT converter). This leads to reduced cost and a simplified control circuit compared to the previous ZVT converter. The ZVS is achieved for wide line and load ranges with minimum device voltage and current stresses. Operation principle, control strategy and features of the proposed power converter are presented and verified by the experimental results from a 1.5 kW 100 kHz laboratory prototype     

Modeling and analysis of static and dynamic characteristics forbuck-type three-phase PWM rectifier by circuit DQ transformation

The static and dynamic characteristics of buck-type three-phase pulse width modulation (PWM) rectifier are fully analyzed based on the DC and AC circuit models developed by the circuit DQ transformation. Various static power converter characteristics such as gain, real and reactive power, power factor and unity power factor conditions are completely analyzed. Transition characteristics are also analyzed by both exact small-signal models with full set of equations and simplified output models in explicit form. The usefulness of the models is verified through computer simulations and experiments with good agreement shown     

Measuring Economic Externalities of IT and R&D

We measure and compare externalities of IT and R&D capital stocks in different Korean industry sectors using inter‐industry input‐output tables of 1985, 1990, 1995 and 2000. We also compute the multiplier effects that relate to the directions of future economic effects. The key findings are as follows. First, we observed continuous capital deepening in all nine industries over the period of 1985 to 2000. Second, the backward multipliers of IT capital were the highest in the manufacturing industry. As for inter‐industry externalities, the indirect backward multipliers, which exclude intra‐industry backward multiplier effects within the industry, were also the highest in the manufacturing industry. Third, the forward multiplier effects of IT capital stock were the most substantial in the construction industry during the 1980s and in the manufacturing industry thereafter. Finally, using the transition multiplier matrix reflecting the backward effects of the two capitals in the past, the economic backward effects, especially the external economic effects, are predicted to increase through 2010 among all industries. The above findings suggest that, in order to maximize the forward and backward effects of the ever‐increasing IT capital, we need to formulate an industry policy reducing the cost of capital accumulation in the manufacturing industry through improvement in productivity of the IT industry.