Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In

Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In grown by the vertical gradient freeze method. The main goal of the investigation was to study defects, which strongly trap charge carriers or act as recombination centers in order to eliminate them from the technological process. The main difference among detecting and non-detecting samples was the absence of electron traps with a very high capture cross-section and energy 0.6 eV to 0.7 eV, which act as lifetime killers even at low concentrations. Recently published ab initio calculations show a complex of Te antisite and Cd vacancy within this energy range.     

Modeling TCP SACK performance over wireless channels with semi-reliable ARQ/FEC

Providing reliable data communications over wireless channels is a challenging task because time-varying wireless channel characteristics often lead to bit errors. These errors result in loss of IP packets and, consequently, TCP segments encapsulated into these packets. Since TCP cannot distinguish packet losses due to bit corruption from those due to network congestion, any packet loss caused by wireless channel impairments leads to unnecessary execution of the TCP congestion control algorithms and, hence, sub-optimal performance. Automatic Repeat reQuest (ARQ) and Forward Error Correction (FEC) try to improve communication reliability and reduce packet losses by detecting and recovering corrupted bits. Most analytical models that studied the effect of ARQ and FEC on TCP performance assumed that the ARQ scheme is perfectly persistent (i.e., completely reliable), thus a frame is always successfully transmitted irrespective of the number of transmission attempts it takes. In this paper, we develop an analytical cross-layer model for a TCP connection running over a wireless channel with a semi-reliable ARQ scheme, where the amount of transmission attempts is limited by some number. The model allows to evaluate the joint effect of stochastic properties of the wireless channel characteristics and various implementation-specific parameters on TCP performance, which makes it suitable for performance optimization studies. The input parameters include the bit error rate, the value of the normalized autocorrelation function of bit error observations at lag 1, the strength of the FEC code, the persistency of ARQ, the size of protocol data units at different layers, the raw data rate of the wireless channel, and the bottleneck link buffer size.     

The interplay of electronic structure,molecular orientation and charge transport in organic semiconductors: Poly(thiophene) and poly(bithiophene)

Ultrathin films of poly(thiophene) (PT) and poly(bithiophene) (PBT) were prepared by electrochemical route using ionic liquid (BFEE) as medium and electrolyte. Distinct morphologies and electrical properties were observed in these materials. To evaluate its response in photovoltaics, these films were used as active layer in bilayer geometry solar cells with the electron acceptor molecule C₆₀. The best performance was observed for PT films. In order to probe the differences in molecular dynamics and structural order, ultrafast electron dynamics in the low-femtosecond regime was evaluated by resonant Auger spectroscopy using the core–hole clock method at the sulfur K absorption edge. Electron delocalization times for the different polymeric films were derived as a function of the excitation energy. Photoabsorption measurements were conducted and molecular orientation derived. These results corroborated with the morphology found for these films and thus the performance of PT and PBT in the devices, and with the proposed conduction mechanism.     

无线局域网--展望未来

符合802．11b标准的无线局域网为市场上无线网络的发展搭建了稳定的平台。WiFi标准可保证不同厂商产品的互操作性，从而确保最终消费者投资的安全。随着与802．11b同在2．4GHz带宽上运行的更新的802．11g网络的推出，无线网络得到进一步发展。它们既能支持更高速率(最大54Mb/秒)，又具有向下兼容的特性。此外，消费者也可以选择在5GHz带宽的速率上运行802．11a     

Some aspects on ruggedness of SiC power devices

This article is on effects that can destroy SiC power semiconductor devices. The failure physics in SiC devices are discussed based on the well understood effects in silicon devices. In some device properties, such as surge current, short circuit, static avalanche and dynamic avalanche, SiC has significant possible advantages compared to silicon. For cosmic ray stability, there are no unique results. Regarding thermal mechanical stress on interface materials, SiC is more challenging. The same may hold for electrical stress in passivation layers at the junction termination.     

Selective Functionalization of Microstructured Surfaces by Laser‐Assisted Particle Transfer

Microcavity arrays represent millions of different reaction compartments to screen, for example, molecular interactions, exogenous factors for cells or enzymatic activity. A novel method is presented to selectively synthesize different compounds in arrays of microcavities with up to 1 000 000 cavities per cm². In this approach, polymer microparticles with embedded pre‐activated monomers are selectively transferred into microcavities with laser radiation. After particle patterning, heating of the particle matrix simultaneously leads to diffusion and coupling of the monomers inside each microcavity separately. This method exhibits flexibility, not only in the choice of compounds, but also in the choice of particle matrix material, which determines the chemical reaction environment. The laser‐assisted selective functionalization of microcavities can be easily combined with the intensively growing number of laser applications for patterning of molecules and cells, which is useful for the development of novel biological assays.