Flux Jumps and H-T Diagram of Instability for MgB2

We present a study of magneto-thermal instabilities in polycrystalline MgB₂ superconductor, by magnetic hysteresis loop measurements and by investigations of magnetic flux dynamics with a miniature Hall probe. Temperature and magnetic field ranges where the flux jumps may be observed have been determined. On the basis of measurements of the magnetic flux dynamics, an average magnetic diffusivity describing the process of the flux jump is estimated. This parameter is compared with the thermal and magnetic diffusivities calculated on the basis of available data for thermal conductivity, heat capacity and resistivity. It is shown that the estimated value of the field of the first flux jump is influenced significantly by the field dependence of specific heat. In order to explain the observed phenomenon, the temperature reached by the sample during the flux jump at different magnetic fields is calculated.     

Choice of design of cryogenic vessels with minimal weight

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 3, pp. 20–22, March, 1991.     

Designing linear electric drives

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 11, pp. 12–13, November, 1991.     

The pathogenesis of undiagnosed peritonitis in middle-aged and elderly patients with acute coronary insufficiency

Three-stage treatment using a day hospital instead of a sanatorium with regards to the pattern of a tuberculosis process can achieve the results of closure of decay and abacillation cavities, which are not inferior to those with the conventional treatment, by reducing the basic regimen through the length of a hospital stage. The efficiency of two-stage treatment (day hospital--outpatient clinic) of lung tissue decay and culture-positive patients depends on the duration of the basic regimen, patient compliance, and the presence of a concomitant abnormality.     

Amplitude aperture-distribution control in displaced-axistwo-reflector antennas

A design method for improving the efficiency and reduction of sidelobes in displaced-axis two-reflector antennas is presented. The method is based on an analysis of the geometrical-optics field transformation in the displaced-axis two-reflector arrangement. The principal difference of the displaced-axis antenna from the Cassegrain/Gregory two-reflector antenna is pointed out. While decreasing the level of illumination of the subreflector edge in the Cassegrain/Gregory antenna leads to decreasing the sidelobe levels, and, respectively, the efficiency of the antenna system, in the displaced-axis antenna, decreasing the level of illumination of the subreflector leads to an increased level of sidelobes and an essentially nonuniform amplitude distribution in the aperture. The aperture-amplitude-distribution dependence of the illumination level of the subreflector edge in displaced-axis antennas is much stronger than in Cassegrain/Gregory antennas     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Burners (fuel nozzles) for fritmaking furnaces

Translated from Steklo i Keramika, No. 6, p. 31, June, 1992.