Effect of catch cup geometry on 3D boundary layer flow over the wafer surface in a spin coating

Recently, development of high technology has been required for the formation of thin uniform film in manufacturing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scarers outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. In the dry process of a spin coating, it is a serious concern that the film thickness increases near the wafer edge in the case of low rotating speed. The purpose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.     

Extraction of a plasma time-activity curve from dynamic brain PET images based on independent component analysis

A compartment model has been used for kinetic analysis of dynamic positron emission tomography (PET) data [e.g., 2-deoxy-2-18F-fluoro-D-glucose (FDG)]. The input function of the model [the plasma time-activity curve (pTAC)] was obtained by serial arterial blood sampling. It is of clinical interest to develop a method for PET studies that estimates the pTAC without needing serial arterial blood sampling. For this purpose, we propose a new method to extract the pTAC from the dynamic brain PET images using a modified independent component analysis [extraction of the pTAC using independent component analysis (EPICA). Source codes of EPICA are freely available at http://www5f.biglobe.ne.jp/?kimura/Software/top.html]. EPICA performs the appropriate preprocessing and independent component analysis (ICA) using an objective function that takes the various properties of the pTAC into account. After validation of EPICA by computer simulation, EPICA was applied to human brain FDG-PET studies. The results imply that the EPICA-estimated pTAC was similar to the actual measured pTAC, and that the estimated blood volume image was highly correlated with the blood volume image measured using 15O-CO inhalation. These results demonstrated that EPICA is useful for extracting the pTAC from dynamic PET images without the necessity of serial arterial blood sampling.     

An auto-gain control transimpedance amplifier with low noise andwide input dynamic range for 10-Gb/s optical communication systems

This paper describes a 10-Gb/s transimpedance amplifier (TIA), fabricated in a 0.1-μm-p-HEMT technology. To improve the optical overload characteristics, an automatic gain control (AGC) circuit is included. The measured results show excellent performance, transimpedance of 63.3 dBΩ (1.46 kΩ), bandwidth of 8.0 GHz, and equivalent input noise current density of 6.5 pA/rtHz. When the bit error rate is 10^-9, the minimum sensitivity and the optical overload are -21.2 dBm, +4.3 dBm, respectively, using a 0.8 A/W pin photodiode (PD). The power dissipation is about 0.5 W from a single -5-V supply. The die area is 1.3×1.6 mm²     

Development of coincidence transmission electron microscope. III. Incorporation with gamma-type imaging energy filter

We have developed a new analytical transmission electron microscope (TEM), called coincidence TEM, which, in principle, enables observation of elemental mapping images at a high signal-to-noise ratio. We have previously reported the successful observation of an elemental mapping image of a specimen, but over a very long period of time (168 h). To solve this inefficiency, we installed a gamma-type imaging energy filter in the coincidence TEM to remove the no-loss electrons, which are mainly transmitted electrons. This has enabled the intensity of the background signals in the coincidence measurement to be markedly reduced. The coincidence TEM with a gamma-type imaging energy filter allows the coincidence image to be observed in 3 h, thus, the measurement time is shortened by two orders of magnitude. Moreover, the use of a silicon drift detector (SDD) will shorten the measurement time.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed.     

Durable Ultraflexible Organic Photovoltaics with Novel Metal‐Oxide‐Free Cathode

Flexible and stretchable organic photovoltaics (OPVs) are promising as a power source for wearable devices with multifunctions ranging from sensing to locomotion. Achieving mechanical robustness and high power conversion efficiency for ultraflexible OPVs is essential for their successful application. However, it is challenging to simultaneously achieve these features by the difficulty to maintain stable performance under a microscale bending radius. Ultraflexible OPVs are proposed by employing a novel metal‐oxide‐free cathode that consists of a printed ultrathin metallic transparent electrode and an organic electron transport layer to achieve high electron‐collecting capabilities and mechanical robustness. In fact, the proposed ultraflexible OPV achieves a power conversion efficiency of 9.7% and durability with 74% efficiency retention after 500 cycles of deformation at 37% compression through buckling. The proposed approach can be applied to active layers with different morphologies, thus suggesting its universality and potential for high‐performance ultraflexible OPV devices.     

Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation

The dependence of off-leakage current on channel film quality in poly-Si thin-film transistors has been analyzed using two-dimensional device simulation. It is found that the off-leakage current decreases as the intragrain trap density decreases for the low V_gs. This is because the Phonon-assisted tunneling with Poole-Frenkel effect is the dominant mechanism of the carrier generation and the generation rate of carrier pair decreases as the intragrain trap density decreases. On the other hand, the off-leakage current slightly increases as the intragrain trap density decreases for the high V_gs. This is because the band-to-band tunneling is the dominant mechanism and the influence of the intragrain trap density to the carrier conductance is larger than that to the generation rate.     

EXOS-D (AKEBONO) very low frequency plasma wave instruments (VLF)

The Akebono (EXOS-D) satellite has been successfully observing the Earth's magnetosphere since it was launched on February 21, 1989. The objectives of VLF instruments on board the satellite were to investigate the behavior of plasma waves associated with accelerated auroral particles, wave-particle interaction mechanisms, and propagation characteristics of whistler-mode waves in the magnetosphere. The instruments measured not only the dynamic spectra of VLF waves up to 15 kHz by a wideband receiver, but also their absolute field intensities, wave normal vectors, and Poynting vectors. Two electric and three magnetic components with a bandwidth of about 50 Hz up to 12.5 kHz are sent to measure the wave normal vectors and Poynting vectors. The antenna impedance is measured to determine the correct absolute electric field intensities. The instruments have successfully measured the wave spectra, the wave normal vectors. Poynting vectors, the precise wave intensities, the antenna impedance, etc. The present paper describes the unique features of the instruments, especially the Poynting flux analyzers in more detail. Obtained scientific results are also reviewed     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability