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981.
E. V. Golikova V. S. Grigor’ev V. I. Kuchuk T. S. Mashchenko L. P. Efimenko A. T. D’yachkova 《Glass Physics and Chemistry》2008,34(5):582-598
The aggregate stability of submicron and nanosized ZrO2 aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10?3–10?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO2 particles is estimated. 相似文献
982.
Permeable reactive barrier for groundwater remediation 总被引:4,自引:0,他引:4
R. Thiruvenkatachari S. Vigneswaran R. Naidu 《Journal of Industrial and Engineering Chemistry》2008,14(2):145-156
This article aims to provide an overview of the upcoming technology of permeable reactive barriers for groundwater remediation. A comprehensive list of references and web-links are also provided for further in-depth understanding. A brief discussion on the Australian perspective on this emerging technology is also included. 相似文献
983.
984.
Various heat insulation materials produced at home and abroad are compared. The advantage of using natural nano-structured
materials is substantiated.
Translated from Novye Ogneupory, No. 7, pp. 41–44, July 2008. 相似文献
985.
A very important characteristic of coking coal is its clinkering ability, i.e., its ability to form a nonvolatile solid residue, consisting of disparate grains, on heating in specific conditions. The clinkering ability of the coal is determined by the properties of its plastic mass. Various methods may be used to evaluate the plastic-ductile properties of the coal. However, since the 1930s, the main method used to evaluate the clinkering properties of coal, within the nations of the former Soviet Union, has been the Sapozhnikov-Bazilevich plastometric method, because it provides more information than competing approaches. For the same reason, the thickness of the plastic layer, which is one of the parameters determined by this method, is used for coal classification in State Standard GOST 25543-88 (Lignite, Coal, and Anthracite: Genetic and TEchnological Classification) and its Ukrainian counterpart DSTU 3472-96 (Lignite, Coal, and Anthracite: Classification). This explains the strict requirements on the accuracy and reliability of the plastometric characteristics. 相似文献
986.
A technique is proposed for introducing microdoses (10?5–10?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI2 system containing 5 mol % GeI2) and indium cations (the InCl3-MgCl2 system containing 15 mol % MgCl2, the InCl3-CdCl2 system containing 1.5 mol % CdCl2, and the In2S3-InCl3 system containing 5 mol % InCl3) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd1 ± δCr2Se4. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors. 相似文献
987.
A theory describing the optical orientation and Hanle effect for holes in quantum wells or quantum dots based on cubic semiconductors is developed. It is demonstrated that the presence of internal or external strain in quantum-confinement heterostructures leads to the dependence of the Hanle effect on the orientation of the magnetic field with respect to the heterostructure growth axis. 相似文献
988.
Chaves R. Kuzmanov G. Sousa L. Vassiliadis S. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2008,16(8):999-1008
989.
V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
990.