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991.
Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We have deposited strongly (1 1 1)-textured thin films of copper by atomic layer deposition (ALD) using [2,2,6,6-tetramethyl-3,5-heptadionato] Cu(II), Cu(thd)2, as the precursor. The dependence of the microstructure of the films on ALD conditions, such as the number of ALD cycles and the deposition temperature was studied by X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy. Analysis of (1 1 1)-textured films shows the presence of twin planes in the copper grains throughout the films. SEM shows a labyrinthine structure of highly connected, large grains developing as film thickness increases. This leads to low resistivity and suggests high resistance to electromigration. 相似文献
992.
In this paper, the average stress method for the fatigue limit evaluation of stress raising geometrical features is revised and extended. In particular, an analytical close‐form approach was used and the linear elastic stress equations were modified by taking into account the effect of nominal stress on the local stress distribution. Hence, the average tangential stress was correctly evaluated over a distance of 2a0, where a0 was El Haddad's short crack constant, for long and small notches as well as for crack‐like notches. When this model is applied to a wide range of geometrical features subjected to mode I fatigue loading, the classical shape of the curves of the Kitagawa–Takahashi diagram was obtained for changes in crack‐like notch size. Similarly, notch sensitivity was estimated by reducing the notch tip radius. The accuracy of the proposed method in predicting fatigue limits was then checked by using experimental data taken from the literature and generated on testing specimens weakened by rounded and sharp notches as well as by small artificial defects. 相似文献
993.
A model for vibrations of a beam with a slider is derived, analysed and numerically simulated. It describes a viscoelastic beam that is clamped at one end to a vibrating device, while the other end moves between two stops attached to a slider. The contact is described by the normal compliance or by the Signorini conditions. The existence of weak solutions is established using the theory of set-valued pseudomonotone operators. The model is discretized using fourth-order spatial discretization, the solutions are numerically simulated and their results presented. The dynamics of the vibrations are depicted and so are the noise characteristics of the system. 相似文献
994.
Mathematical models of thermomechanical processes which are based on the laws of rational thermodynamics of irreversible processes are treated. Singular features of the unsteady-state behavior of a continuous medium are demonstrated within different models, such as a medium with internal parameters of state, a medium with memory, and a medium of the velocity type. 相似文献
995.
Meghelli M. Rylyakov A.V. Zier S.J. Sorna M. Friedman D. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2147-2154
A 43-Gb/s receiver (Rx) and transmitter (Tx) chip set for SONET OC-768 transmission systems is reported. Both ICs are implemented in a 0.18-/spl mu/m SiGe BiCMOS technology featuring 120-GHz f/sub T/ and 100 GHz f/sub max/. The Rx includes a limiting amplifier, a half-rate clock and data recovery unit, a 1:4 demultiplexer, a frequency acquisition aid, and a frequency lock detector. Input sensitivity for a bit-error rate less than 10/sup -9/ is 40 mV and jitter generation better than 230 fs rms. The IC dissipates 2.4 W from a -3.6-V supply voltage. The Tx integrates a half-rate clock multiplier unit with a 4:1 multiplexer. Measured clock jitter generation is better than 170 fs rms. The IC consumes 2.3 W from a -3.6-V supply voltage. 相似文献
996.
997.
M. Riad Manaa Laurence E. Fried Evan J. Reed 《Journal of Computer-Aided Materials Design》2003,10(2):75-97
In this article, we review recent atomistic computational techniques to study the electronic structure aspects and chemistry
of energetic materials at high-pressure and/or high temperature. While several mechanisms have been proposed for the initial
events of energetic materials at high-pressure, we explore the validity of a proposed shear-induced local metallization via
molecular bond bending in the insensitive explosive TATB. We study the effect of high-stress (both uniform and uniaxial) on
the electronic energy band-gap and the first chemical event of a prototypical energetic material, that of nitromethane. We
also determine chemical reactions rate laws and decomposition mechanisms from a quantum-based molecular dynamics simulation
of HMX, a widely used explosive material, at conditions of high density and temperature similar to that encounter under detonation.
Finally, we review a new multi-scale computational tool recently developed to model the shock-induced chemistry of energetic
materials at the atomistic level, and report its applicability to shocked solid nitromethane.
This revised version was published online in June 2006 with corrections to the Cover Date. 相似文献
998.
Separation tests using hollow-fibre modules were performed for the difficult selective extraction of trivalent actinides over fission lanthanides from acidic media. This article shows that with 2,6-di(5,6-dipropyl-1,2,4-triazin-3-yl)pyridine as the extractant, up to 94% americium could be extracted from 1.0 kmol/m3 HNO3, with minimal lanthanide co-extraction. Using a synergistic mixture of bis(chlorophenyl)dithiophosphinic acid and tri-n-octyl phosphine oxide, tests were performed on extraction, lanthanide scrubbing and stripping. In the extraction test, up to 99.99% americium could be extracted from 0.5 kmol/m3 HNO3, with approximately one third of the lanthanides being co-extracted. Mass transfer calculations using a consistent set of input data showed good agreement with the experiments. 相似文献
999.
In this practical case study the method of self-organizing map (SOM) neural net is applied to analyze a CMOS process problem, where the device under study is a heartbeat rate monitor integrated circuit. The wafer yield is analyzed against the process control monitoring (PCM) parameter measurement values. The SOM efficiently reduces the parameter space dimensions and helps in visualizing the different parameter relations. This makes it possible to identify the most probable PCM parameters affecting the yield. Those were found out to be NMOS transistor drain current and aluminium sheet resistance. 相似文献
1000.