The Shunting of Current and the Resultant Variation of Voltage in Channels of Plasmatrons with Self-Adjusting Length of Electric Arc

The characteristics of pulsation processes in dc plasmatrons with the cathode located in the channel center and the anode in the form of a cylindrical or a conical channel wall are investigated in plasmas of argon and nitrogen at atmospheric pressure. The fast Fourier transform of signals and their subsequent computer processing are used to obtain the dependences of the frequency of fluctuations of the arcing voltage on the working parameters of the plasmatron, namely, the electric arc current, the flow rate of plasma-forming gas, and the channel diameter. For plasmatrons with the self-adjusting length of the electric arc, analysis is performed of the mechanism of reclosing of the anode region of the arc, i.e., of the electric arc shunting associated with the stretching of the current filament by a flow of gas and with the electrodynamic interaction of different filament regions. A formula is derived which defines the dependence of the characteristic frequency of fluctuations of the arcing voltage on the external parameters of the problem, namely, the arc current, the flow rate of the working gas, and the characteristic channel diameter. It is demonstrated that the pattern of the dependence of the frequency of voltage fluctuations on the gas flow rate may vary with the values of the parameter of magnetohydrodynamic interaction. The formula generalizes the experimental results of numerous researchers obtained in a wide range of variation of the external parameters.     

Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

Application of extended boundary conditions and the Haar wavelets in the analysis of wave scattering by thin screens

A recent approach to solution of 2D scattering problems for electromagnetic waves scattered by thin screens is analyzed. With the use of examples of scattering by a strip and an unclosed cylindrical surface, it is shown that the proposed approach has no advantages in terms of the efficiency of numerical solution over a well-known approach based on exact integral equations for currents that have singular kernels and that are solved with the Krylov-Bogoliubov method.     

On the effect of spatial variances in historical rainfall time series to CSO performance evaluation.

Historical, high-resolution rain series are the backbone of modern combined sewer overflow (CSO) structure design. These rain series are the input to the computational estimation of the performance of the measures with respect to CSO pollution abatement. However, those historical precipitation measurements are available at only a few locations. Frequently rain series have to be used from gauging stations at a significant distance. In order to judge and to compensate for this influence an estimate between rain characteristics and combined sewer outflow (CSO) performance indicators would be useful. In this paper such correlations have been sought for a collection of 37 rain series covering large areas of Europe. It was found that the mean annual rain volume can explain most of the variances for the performance indicators Number of overflows and CSO volume. For explaining the spatial differences in the efficiency of the CSO structure another rain characteristic, i.e. the maximum event with a return period of one year, is to be used.     

Routing Correlated Data with Fusion Cost in Wireless Sensor Networks

In this paper, we propose a routing algorithm called minimum fusion Steiner tree (MFST) for energy efficient data gathering with aggregation (fusion) in wireless sensor networks. Different from existing schemes, MFST not only optimizes over the data transmission cost, but also incorporates the cost for data fusion, which can be significant for emerging sensor networks with vectorial data and/or security requirements. By employing a randomized algorithm that allows fusion points to be chosen according to the nodes' data amounts, MFST achieves an approximation ratio of 5/4log(k + 1), where k denotes the number of source nodes, to the optimal solution for extremely general system setups, provided that fusion cost and data aggregation are nondecreasing against the total input data. Consequently, in contrast to algorithms that only excel in full or nonaggregation scenarios without considering fusion cost, MFST can thrive in a wide range of applications     

Sigma-delta modulators operating at a limit cycle

A new type of sigma-delta modulator that operates in a special mode named limit-cycle mode (LCM) is proposed. In this mode, most of the SDM building blocks operate at a frequency that is an integer fraction of the applied sampling frequency. That brings several very attractive advantages: a reduction of the required power consumption per converted bandwidth, an immunity to excessive loop delays and to digital-analog converter waveform asymmetry and a higher tolerance to clock imperfections. The LCMs are studied via a graphical application of the describing function theory. A second-order continuous time SDM with 5 MHz conversion bandwidth, 1 GHz sampling frequency and 125 MHz limit-cycle frequency is used as a test case for the evaluation of the performance of the proposed type of modulators. High level and transistor simulations are presented and compared with the traditional SDM designs.     

Nonlinear crack dynamics and scaling aspects of fracture (experimental and theoretical study)

Nonlinear dynamics of crack propagation are investigated experimentally and theoretically with the goal of clarifying the nature of limiting crack velocity, the transition from steady state to branching regimes of crack dynamics, and the dynamics of crack arrest. The theoretical explanation of limiting steady-state crack velocity and the transition to a branching regime was proposed due to the study of collective behavior of a microcrack ensemble at the crack tip area. The experimental study of crack dynamics was carried out in a preloaded plate PMMA specimen using the high-speed camera coupled with the photo-elasticity method, the point stress recording with a laser system, and the failure surface roughness measurement.     

Nanoscale Crystallization in Amorphous Fe–P–Mn Alloys

Mössbauer effect measurements and physicochemical analysis demonstrate that annealing of amorphous Fe–P–Mn alloys leads to the formation of a nanocrystalline structure.     

Fabrication, assembly, and characterization of molecular electronic components

One of the ultimate miniaturizations in nanotechnology is molecular electronics, where devices will consist of individual molecules. There are many complications associated with the use of molecules in electronic devices, such as the electronic perturbations in the molecule associated with being bonded to an electrode, how electrons traverse the metal-molecule junction, and the difficulty of macroscopically addressing single to very few molecules. Whether fabricating a test structure or a usable device, the use of self-assembly is fundamental to the fabrication of molecular electronic devices. We will discuss how to fabricate self-assembled monolayers into test assemblies and how to use intermolecular interactions to direct molecules into desired positions to create nanostructures and to connect functional molecules to the outside world. These assemblies serve as test structures for measurements on single or bundled molecules. The development of several experimental techniques, including various scanning probes, mercury drop junctions, break junctions, nanopores, crossed wires, and other techniques using nanoparticles have enabled the ability to test these structures and make reproducible measurements on single molecules. Many of these methods have been developed to test molecules with potential for integration into devices such as oligo (phenylene-ethynylene) molecules and other /spl pi/-conjugated molecules, in ensemble or single-molecule measurements.     

TEM Studies of High Temperature Corrosion Behaviour of TiAl Intermetallics with Surface Modifications

The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl₃ diffusion coating was studied in an environment of H₂/H₂S/H₂O at 850^oC. The kinetic results demonstrate that the TiAl₃ coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al₂O₃ scale on the surface of the TiAl₃‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800^oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate.