Thermophysical properties data: Government-university-industry cooperation in multidisciplinary research

Historical developments regarding the realization of the importance of reliable thermophysical properties data in engineering applications are presented. The events leading to the establishment of the Symposium on Thermophysical Properties in 1959 and the accomplishments of the symposia series since then are discussed. Contributions of the National Bureau of Standards to the thermophysical properties field are described.Welcoming address presented at the Ninth Symposium on Thermophysical Properties, June 24–27, 1985, Boulder, Colorado, U.S.A.     

The automated simulation of dynamic non-linearity to shot-peening mechanics

This paper gives an automated simulation of dynamic non-linearity to shot-peening mechanics. Three-dimensional constitutive material law expressed in the stress invariants is used along with the nonlinear analysis based on the concept of initial stress. Residual stresses, strains, displacements and plasticity can be calculated using information in Gauss integration points. The ultimate load is reached when the algorithm does not converge. The corresponding failure modes can be interpreted as those for which as state of equilibrium is no longer possible. The final results obtained the shakedown diagrams plotted in three dimensions. The history of these diagrams is self-explanatory.     

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.     

A new technique for on-line and off-line high speed computation

A novel technique for both online and offline computation is presented. With this technique, a reconstruction analysis in elementary particle physics, otherwise prohibitively long, has been accomplished. It will be used online in an upcoming Fermilab experiment to reconstruct more than 100000 events per second and to trigger on the basis of that information. The technique delivers 40 gigaoperations per second, has a bandwidth on the order of gigabytes per second, and has a modest cost. An overview of the program, details of the system, and performance measurements are presented