Reliability assessment of polysilicon MEMS structures under mechanical fatigue loading

This paper examines the current status and methodologies of study of material and system reliability in Microelectromechanical Systems (MEMS). This includes: a review of the current literature in the area of MEMS regarding failure analysis experimental investigations; testing methods and philosophies for material characterization and possible mechanistic analytical solutions for estimating material properties. The paper proposes a reliability framework that encompasses all the available information. This statistical platform will enable the MEMS design engineer to distill all the available information in the literature into a stand-alone semi-empirical material reliability model, and a holistic system-level model for a complete system.     

Thermodynamics of Chemical Interactions in the CdTe–ZnTe–O2–C System during Melt Growth of Cd1 – x Zn x Te Crystals

Thermodynamic analysis is used to identify the possible chemical reactions of CdTe and ZnTe with the container material and gaseous atmosphere during Bridgman growth. Thermodynamic parameters of carbide and oxycarbide formation in the growth system are evaluated. The calculation results are consistent with the well-known fact that oxygen-containing impurities can be removed from the growth charge by calcination in hydrogen. Moreover, as shown in experiment, the removal of oxygen from the charge ensures a substantial decrease in the carbon content of the crystals.     

Binary sequences with low aperiodic autocorrelation for synchronization purposes

An evolutionary algorithm is used to find three sets of binary sequences of length 49-100 suitable for the synchronization of digital communication systems. Optimization of the sets are done by taking into consideration the type of preamble used in data frames and the phase-lock mechanism of the communication system. The preamble is assumed to be either a pseudonoise (PN) sequence or a sequence of 1s. There may or may not be phase ambiguity in detection. With this categorization, the first set of binary sequences is optimized with respect to aperiodic autocorrelation which corresponds to the random (PN) preamble without phase ambiguity case. The second and third sets are optimized with respect to a modified aperiodic autocorrelation for different figures of merit corresponding to the predetermined preamble (sequence of 1s) with and without phase ambiguity cases.     

Catalytic dehydrogenation of ethylbenzene with carbon dioxide: promotional effect of antimony in supported vanadium–antimony oxide catalyst

Alumina-supported vanadium oxide, VO_x/Al₂O₃, and binary vanadium–antimony oxides, VSbO_x/Al₂O₃, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by S_BET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO₂ pulse methods. VSbO_x/Al₂O₃ exhibited enhanced catalytic activity and especially on-stream stability compared to VO_x/Al₂O₃ catalyst. Incorporation of antimony into VO_x/Al₂O₃ increased dispersion of active VO_x species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V_0.43Sb_0.57O_x/Al₂O₃ system.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Stabilization of singularly perturbed fuzzy systems

This paper presents some novel results for stabilizing singularly perturbed (SP) nonlinear systems with guaranteed control performance. By using Takagi-Sugeno fuzzy model, we construct the SP fuzzy (SPF) systems. The corresponding fuzzy slow and fast subsystems of the original SPF system are also obtained. Two fuzzy control designs are explored. In the first design method, we propose the composite fuzzy control to stabilize the SPF subsystem with H/sup /spl infin// control performance. Based on the Lyapunov stability theorem, the stability conditions are reduced to the linear matrix inequality (LMI) problem. The composite fuzzy control will stabilize the original SP nonlinear systems for all /spl epsiv//spl isin/(0,/spl epsiv//sup */) and the upper bound /spl epsiv//sup */ can be determined. For the second design method, we present a direct fuzzy control scheme to stabilize the SP nonlinear system with H/sup /spl infin// control performance. By utilizing the Lyapunov stability theorem, the direct fuzzy control can guarantee the stability of the original SP nonlinear systems for a given interval /spl epsiv//spl isin/[/spl epsiv/_,/spl epsiv/~]. The stability conditions are also expressed in the LMIs. Two SP nonlinear systems are adopted to demonstrate the feasibility and effectiveness of the proposed control schemes.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Verification structures for transmission line pulse measurements

Test structures intended for performance verification of transmission line pulse (TLP) systems have been designed and tested. They consist of simple resistors in either copper or silicide clad polysilicon. The copper structures proved unsuitable due to excess heating and melting of any reasonable geometry. The silicide clad polysilicon proved more successful. A simple model of resistive heating accounts for observed nonlinearity in the structures under high current stress. The availability of a verification structure on wafer ensures the proper performance of the full measurement system, including contact to the wafer and the pad structure, ensuring valid TLP measurements.     

Comments, with reply, on `Passive equalization of semiconductordiode laser frequency modulation' by S.B. Alexander et al

Some flaws in a recent article by S.B. Alexander et al. (ibid., vol.7, no.1, p.11-23, Jan. 1989) on the theory of equalization of FM response of a laser diode using passive filters are noted. An error has occurred as a result of assuming a constant C as a positive instead of negative. When C is negative and large, the equalization network cannot be realized with passive networks. Also the simulated time waveform shown in the article for the optical frequency of an equalized laser does not show some spikes which are expected theoretically. The spikes occur as a result of an imperfect equalization provided by the proposed passive filters that were realized assuming C as positive. In replying the original author feels that the comments and observations result simply from attempting to extend the simple FM transfer-function model far beyond its limits while trying to introduce unnecessary theoretical rigor