干巴菌多糖提取工艺优化及抗氧化活性的研究

以产于云南曲靖的干巴菌为原料,以多糖提取率为评价指标,采用单因素实验及正交实验优化干巴菌多糖的提取工艺,通过测定干巴菌多糖对DPPH自由基及羟基自由基的清除率来评价其抗氧化活性。结果表明,干巴菌多糖的最佳提取工艺为:提取温度70℃、提取时间2.5 h、料液比1∶15(g∶mL),在此条件下,多糖提取率达到10.08%;当干巴菌多糖浓度为5 mg·mL~(-1)时,其对DPPH自由基的清除率为86.99%,对羟基自由基的清除率为87.46%,有较好的抗氧化作用。     

突发疫情对染料行业影响及对策

一场新型冠状病毒肺炎疫情的爆发给染料行业的发展带来了影响,既有负面消极,也有积极影响。疫情将促进染料行业绿色发展,推动染料行业走向信息化、智能化时代,走向高质量发展,指出只要坚持绿色、创新和智能化,就能战胜疫情,推动中国染料行业稳健发展。     

喷油方式对斜齿轮齿面温度的影响

为探讨喷油方式对齿面温度的影响，以斜齿轮为研究对象，通过CFD仿真和试验研究不同喷油方式对斜齿轮齿面温度的影响。针对斜齿轮喷油润滑过程的特点，分析其齿面摩擦生热量，简化轮齿喷油润滑计算模型，并基于CFX进行齿面对流换热仿真研究，得到了不同喷油方式下的齿面温度；基于功率开放式斜齿轮试验平台，对不同喷油方式下的齿面温度进行了试验测量，与仿真计算结果进行对比分析。结果表明：在高速重载斜齿轮传动系统中，啮出侧喷油润滑的方式比啮入侧喷油润滑方式的冷却降温效果要好。     

河南省灵宝市董家埝银矿原生晕特征及地质意义

董家埝银矿是豫西小秦岭矿集区南成矿带目前发现的唯一大型矿床。为了矿床深部勘查工作的顺利进行,了解有用元素在垂向上的变化规律,选用原生晕地球化学方法,通过典型矿床剖面的原生晕特征研究,实现对深部矿体变化趋势的判断。经计算,确定As、Sb、Ag、Au、Cu、Pb、Zn、Co和Mo等9种元素可作为指示元素,其中As和Sb为前缘晕指示元素,Ag、Au、Cu、Pb和Zn为近矿晕指示元素,Co和Mo为尾晕指示元素。分带指数和浓集指数2种方法计算得出的元素在分带序列上的位置总体趋势一致。用分带指数法确定的主矿体自上而下的原生晕轴向分带序列为Co-Mo-Cu-Au-Sb-Zn-Pb-Ag-As,出现"反分带"现象。结合原生晕地球化学参数变化特征、矿体剥蚀程度研究和理想模型,预测M1-I主矿体向深部仍有较大的延伸。研究成果可以为区域同类型矿化地质体深部的趋势判断和决策提供参考。     

复杂难选铁矿石悬浮磁化焙烧-高效分选技术

针对传统铁矿石磁化焙烧技术与装备存在焙烧产品质量差、产能低、能耗高和环境污染严重等问题，创造性提出了一种“预热-蓄热还原-再氧化”悬浮磁化焙烧新工艺。该工艺具有原料适应性广、焙烧产品质量均匀、回收率高、生产能耗低、无污染等特点，适合处理赤铁矿、褐铁矿、菱铁矿及其混合型难选铁矿石。通过多年的潜心基础研究与技术攻关，形成了非均质矿石颗粒悬浮态流动控制、蓄热式高效低温还原、铁物相精准调控与余热同步回收等一系列关键技术，建成了500kg/h复杂难选铁矿石悬浮磁化焙烧-高效分选半工业试验平台。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

一种基于FPGA的可变速率帧结构设计与实现

在简述V.35接口的基础上针对V.35接口速率可变的应用需求提出了一种速率可变的帧结构,该帧结构可支持N×64kb/s(3≤N≤32)速率,从而在V.35接口上实现了多种速率的低速业务传输.     

双馈风机低电压穿越的改进技术

为提高电压跌落条件下双馈风电机组的运行稳定性,介绍了crowbar与chopper共同配合作用的低电压穿越技术,并从提高crowbar阻值整定上限这一角度通过理论分析与仿真验证说明了crowbar与chopper配合作用的优势。提出低电压穿越过程中机侧变流器的无扰切换控制方法,通过仿真验证了这种方法可以大大减少crowbar投切次数与低穿过渡时间,且控制简单可行。     

500 kV 开关弹簧机构支架螺栓断裂的原因分析及处理

HPL500B2型弹簧机构支架(BA)螺栓断裂可能导致开关分合闸失败,对其原因进行分析,发现BA螺栓由于预紧固力矩过大,接近其扭断力矩,使得作用在BA螺栓上的力偏高,BA螺栓安全系数仅为12%,安全系数较低。列出BA螺栓更换步骤及注意事项,并详细介绍分闸、合闸弹簧调整步骤,为类似事件的处理提供参考。