Cryogenic Exfoliation of 2D Stanene Nanosheets for Cancer Theranostics

Stanene(Sn)-based materials have been extensively applied in industrial production and daily life,but their potential biomedi-cal application remains largely un...     

A Low-Power Fullband 802.11a/b/g WLAN Transceiver With On-Chip PA

A low-power fullband 802.11a/b/g WLAN transceiver in 0.15-mum CMOS technology is described. The zero-IF transceiver achieves a receiver noise figure of 4.4/4 dB for the 2.4-GHz/5-GHz bands, respectively. The corresponding sensitivity at 54-Mb/s operation is -72 dBm for 802.11g and -74 dBm for 802.11a using actual PER measurement. An on-chip PA delivers 20 dBm output P1-dB. A new I/Q compensation scheme is implemented in local oscillator (LO) and an image rejection of better than 52 dB is observed. The transmitter delivers 10/1.5 dBm (2.4-/5-GHz) EVM-compliant output power for a 64-QAM OFDM signal at 54-Mb/s. The power consumption is 117/135 mW (1.8-V) in the receive mode and 570/233.1 mW in the transmit mode for 2.4/5 GHz, respectively. The low power consumption, high integration and robustness (-40 to 140degC) make this transceiver suitable for portable applications     

Hypoxia Regulates the Self-Renewal of Endometrial Mesenchymal Stromal/Stem-like Cells via Notch Signaling

Human endometrium is an incredibly dynamic tissue undergoing cyclic regeneration and shedding during a woman’s reproductive life. Endometrial mesenchymal stromal/stem-like cells (eMSC) contribute to this process. A hypoxic niche with low oxygen levels has been reported in multiple somatic stem cell types. However, the knowledge of hypoxia on eMSC remains limited. In mice, stromal stem/progenitor cells can be identified by the label-retaining technique. We examined the relationship between the label-retaining stromal cells (LRSC) and hypoxia during tissue breakdown in a mouse model of simulated menses. Our results demonstrated that LRSC resided in a hypoxic microenvironment during endometrial breakdown and early repair. Immunofluorescence staining revealed that the hypoxic-located LRSC underwent proliferation and was highly colocalized with Notch1. In vitro studies illustrated that hypoxia activated Notch signaling in eMSC, leading to enhanced self-renewal, clonogenicity and proliferation of cells. More importantly, HIF-1α played an essential role in the hypoxia-mediated maintenance of eMSC through the activation of Notch signaling. In conclusion, our findings show that some endometrial stem/progenitor cells reside in a hypoxic niche during menstruation, and hypoxia can regulate the self-renewal activity of eMSC via Notch signaling.     

Measurement of periodic micro flows using micro-particle image velocimetry with phase sampling

A phase-sampling method has been developed to measure periodic flows at a high temporal resolution using conventional micro-particle image velocimetry (PIV). In this technique, the sampling is set such that each velocimetry dataset represents a unique point in phase of a periodic flow. The flow characteristics over a single cycle are reconstructed from measurements over a number of cycles, thus allowing measurement at a higher temporal resolution than the PIV system. The flow measurements were performed for AC electroosmotic flows and verified with results from the phase-locking technique. The temporal resolution is limited by the shortest camera exposure time and the time separation between laser pulses. The theoretical sampling resolution can be as low as 20 μs for 100 Hz periodic flows. A resolution of 200 μs was obtained in the experiment using 40 velocimetry datasets.     

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

Simulation of hole-mobility in doped relaxed and strained Ge

As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport.     

Preparation and photoluminescence properties of γ-KCaPO4: Eu phosphors for near UV-based white LEDs

Novel whitish-blue phosphors based on a phosphate host matrix, γ-KCaPO₄: Eu²⁺, were prepared by a conventional solid-state reaction method using slightly phosphorus deficient conditions and their photoluminescence properties were investigated. The concentration quenching process, temperature dependence of the luminescence and decay curve were also investigated. The γ-KCaPO₄: Eu²⁺ phosphor was efficiently excited by UV-Visible light at wavelengths of 200-450 nm and exhibited a bright whitish-blue emission with a maximum peak wavelength of 473 nm. All of these characteristics suggest that the γ-KCaPO₄: Eu²⁺ phosphors combined with red phosphors could be applicable to near UV-based white LEDs, i.e., only two kinds of phosphor powders are needed for the formation of white light.     

无线传感器网络中d-Hop 2-连通容错支配集的分布式构造算法

无线传感器网络随节点移动组成自我维持的自组织系统,采用连通支配集的虚拟骨干技术可使平面网络系统层次化而简化节点路由、管理和维护。但大规模无线传感器网络的连通支配集节点数目依然庞大,d-hop连通支配集可以大大减小支配集节点数目。另外,由于存在节点失效、链路断裂等无线特性,虚拟骨干网需要具备一定的容错性。在单位圆盘图网络模型中为构建精简且具有容错能力的虚拟骨干网,提出d-hop 2-连通支配集的分布式构造算法,先构造d-hop独立支配集后再连通形成d-hop 2-连通支配集。并从理论和仿真上对算法的复杂度、近似比和算法性能作了进一步探讨和验证。     

A theoretical and experimental investigation of the tool-tip vibration and its influence upon surface generation in single-point diamond turning

This paper presents a theoretical and experimental investigation of the influence of tool-tip vibration on surface generation in single point diamond turning (SPDT). Although it is well known that the relative vibration between the tool and the workpiece plays an important role in the surface generation in single-point diamond turning, most of the prior work has been focused on studying the relative tool-work vibration in the infeed (thrust force) direction while the significant contribution of the effect of the tool-tip vibration in the cutting force direction has been overlooked. In the present study, two characteristic peaks (twin peaks) are identified and found to be corresponding to the tool-tip vibrations by power spectrum density (PSD) analyses. The vibrations possess the features of small amplitude but high frequency. A physical model is proposed to capture the dominant factor based on the characteristic and it reveals that the twin peaks are attributed by the impact between the tool tip and workpiece and the process damping effect. Hence, a geometric model of surface roughness is proposed to take account of tool-tip vibration and it is verified through a series of experiments. The simulation results have been found to agree well with the experimental results.