Effects of isothermal aging and temperature–humidity treatment of substrate on joint reliability of Sn–3.0Ag–0.5Cu/OSP-finished Cu CSP solder joint

This study examined the effects of isothermal aging and temperature–humidity (TH) treatment of substrate on the joint reliability of a Sn–3.0Ag–0.5Cu (wt.%)/organic solderability preservative (OSP)-finished Cu solder joint. Two types of OSP-finished chip-scale-package (CSP) substrates were used, those subjected and not subjected to the TH test. This study revealed an association between the interfacial reaction behaviors, void formation and mechanical reliability of the solder joint. Many voids were formed at the interface of the OSP-finished Cu joint subjected to the TH test. These voids were caused by the oxidation of the OSP-finished Cu substrate during the TH test. In the shear tests, the shear force of the joint with the substrate not subjected to the TH test was slightly higher than that with the TH test. The mechanical reliability of the solder joint was degraded by voids at the interface.     

Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes

Conventionally, lifetests of semiconductor laser diodes usually involved operating the devices continuously at either constant power output or drive current, with periodic recording of their characteristics. In this paper, some effects arising from interrupted lifetest of 1.3 m GaInAsP-InP inverted-rib laser diodes are reported. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet respectively at 50°C, followed by a period during which the lifetest is interrupted and the devices left unbiased at room temperature. Subsequently, the devices were put back on constant power biasing at 50°C. Among a number of parameters, pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed, indicating strong recovery effects commencing from the time when the life-test was interrupted. Redistribution of mobile defects in the cladding layer is postulated to be the cause of the degradation recovery, and the data supports the occurrence of an aging-current dependent defect annihilation mechanism. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices.     

Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings

We demonstrate a novel wavelength-division add/drop multiplexer employing fiber Bragg gratings and polarization beam splitters. The multiplexer is easy to fabricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5-Gb/s-per-channel wavelength-division multiplexing (WDM) transmission system.     

Maximizing SNR in improper complex noise and applications to CDMA

The optimum linear time-invariant (LTI) filter that maximizes the signal-to-noise ratio (SNR) is, in general, the solution to an integral equation. This is the well-known matched filter. With regards to the detection of bandpass signals, we present the full form of the integral equation using the complex baseband representation of signals. The correct form of the complex integral equation includes, in addition to the autocorrelation function, a pseudoautocorrelation function which vanishes for most applications. However, in the presence of improper complex noise, overlooking the pseudoautocorrelation leads to a “nonoptimal” filter. To illustrate the concept, we apply the theory to a direct-sequence code-division multi-access (DS-CDMA) system in which improper complex noise arises. In the application, we derive the SNR maximizing filter and the nonoptimal filter and compare their near-far resistances     

Fixed Point Implementation of the QCELP Speech Coder

The Qualcomm code excited linear prediction (QCELP) speech coder was adopted to increase the capacity of the CDMA Mobile System (CMS). In this paper, we implemented the QCELP speech coding algorithm by using TMS320C50 fixed point DSP chip. Also the fixed point simulation was done with C language. The computation complexity of QCELP on TMS320C50 was about 33 MIPS and program size was 10k words and data memory was 4k words. In the normal call test on the CMS, where mobile to mobile call test was done in the bypass mode without double vocoding, mean opinion score for the speech quality was 3.11.     

A Temperature‐Controllable Microelectrode and Its Application to Protein Immobilization

This letter presents a smart integrated microfluidic device which can be applied to actively immobilize proteins on demand. The active component in the device is a temperature‐controllable microelectrode array with a smart polymer film, poly(N‐isopropylacrylamide) (PNIPAAm) which can be thermally switched between hydrophilic and hydrophobic states. It is integrated into a micro hot diaphragm having an integrated micro heater and temperature sensors on a 2‐micrometer‐thick silicon oxide/silicon nitride/silicon oxide (O/N/O) template. Only 36 mW is required to heat the large template area of 2 mm×16 mm to 40°C within 1 second. To relay the stimulus‐response activity to the microelectrode surface, the interface is modified with a smart polymer. For a model biomolecular affinity test, an anti‐6‐(2, 4‐dinitrophenyl) aminohexanoic acid (DNP) antibody protein immobilization on the microelectrodes is demonstrated by fluorescence patterns.     

Nonfullerene Electron Transporting Material Based on Naphthalene Diimide Small Molecule for Highly Stable Perovskite Solar Cells with Efficiency Exceeding 20%

This study reports a new nonfullerene electron transporting material (ETM) based on naphthalene diimide (NDI) small molecules for use in high‐performance perovskite solar cells (PSCs). These solar cells simultaneously achieve high power conversion efficiency (PCE) of over 20% and long‐term stability. New NDI‐ID (N,N′‐Bis(1‐indanyl)naphthalene‐1,4,5,8‐tetracarboxylic diimide) consisting of an N‐substituted indane group having simultaneous alicyclic and aromatic characteristics is synthesized by a low‐cost, one‐step reaction, and facile purification method. The partially flexible characteristics of an alicyclic cyclopentene group on indane groups open the possibility of low‐temperature solution processing. The conformational rigidity and aromaticity of phenyl and alicyclic groups contribute to high temporal stability by strong secondary bonds. NDI‐ID has herringbone packed semiconducting NDI cores that exhibit up to 0.2 cm² V^?1 s^?1 electron mobility in field effect transistors. The inverted PSCs based on CH(NH₂)₂PbI_3–xBr_x with NDI‐ID ETM exhibit very high PCEs of up to 20.2%, which is better than that of widely used PCBM (phenyl‐C61‐butyric acid methyl ester) ETM‐based PSCs. Moreover, NDI‐ID‐based PSCs exhibit very high long‐term temporal stability, retaining 90% of the initial PCE after 500 h at 100 °C with 1 sun illumination without encapsulation. Therefore, NDI‐ID is a promising ETM for highly efficient, stable PSCs.     

Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Graphene has been gradually studied as a high‐frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene‐based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect‐induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high‐frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh‐frequency region.