首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   23505篇
  免费   324篇
  国内免费   57篇
电工技术   323篇
综合类   25篇
化学工业   4952篇
金属工艺   880篇
机械仪表   1301篇
建筑科学   441篇
矿业工程   6篇
能源动力   891篇
轻工业   1900篇
水利工程   92篇
石油天然气   22篇
无线电   3864篇
一般工业技术   4967篇
冶金工业   1542篇
原子能技术   295篇
自动化技术   2385篇
  2024年   355篇
  2023年   331篇
  2022年   407篇
  2021年   732篇
  2020年   587篇
  2019年   597篇
  2018年   702篇
  2017年   661篇
  2016年   810篇
  2015年   608篇
  2014年   943篇
  2013年   1393篇
  2012年   1458篇
  2011年   1793篇
  2010年   1299篇
  2009年   1332篇
  2008年   1219篇
  2007年   937篇
  2006年   816篇
  2005年   708篇
  2004年   639篇
  2003年   587篇
  2002年   593篇
  2001年   518篇
  2000年   437篇
  1999年   423篇
  1998年   711篇
  1997年   420篇
  1996年   396篇
  1995年   257篇
  1994年   169篇
  1993年   151篇
  1992年   112篇
  1991年   100篇
  1990年   75篇
  1989年   88篇
  1988年   74篇
  1987年   63篇
  1986年   51篇
  1985年   43篇
  1984年   36篇
  1983年   28篇
  1982年   31篇
  1981年   26篇
  1980年   30篇
  1979年   13篇
  1977年   22篇
  1976年   33篇
  1975年   17篇
  1974年   13篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
91.
The leakage current characteristics of the cobalt silicided NMOS transistors with a junction depth of 800 Å have been studied. In order to minimize the junction leakage current, the thickness of the CoSi2 layer should he controlled under 300 Å and the Si surface damage induced by the gate spacer etch should be minimized. The post furnace annealing after the second silicidation by the rapid thermal annealing (RTA) process also affected the leakage current characteristics. The gate induced drain leakage (GIDL) current was not affected by the lateral encroachment of CoSi2 layer into the channel direction when the gate spacer length was larger than 400 Å  相似文献   
92.
In this paper, a novel optimal shape design method is proposed using the finite-difference time-domain (FDTD) method and the design sensitivity analysis to obtain broad-band characteristics of microwave devices. In shape design problem, the nodes that describe the shape of geometry to be optimized are taken as design variables. The design sensitivity is evaluated using the adjoint variable equation that is obtained from a terminal-value problem. The adjoint equation can be solved by the FDTD technique with the backward time scheme. With this method, a Ka-band unilateral fin line is tested to show validity  相似文献   
93.
Network direct attached storage (NDAS) is a network storage architecture that allows direct attachment of existing ATA/ATAPI devices to Ethernet without a separate server. Unlike other architectures such as NAS, SAN, and USB mass storage, no server computer intervenes between the storage and the client hosts. We describe an NDAS disk controller (NDC) amenable to low-cost single-chip implementation that processes a simplified L3/L4 protocol and converts commands between ATA/ATAPI and Ethernet, while the remaining complex tasks are performed by remote hosts. Unlike NAS architectures that use TCP/IP, NDAS uses a TCP-like lean protocol that lends itself well to high-performance hardware realization. Thanks to the simple NDAS architecture and protocol, an NDC implemented on a single 4 mm /spl times/ 4 mm chip in 0.18 /spl mu/m CMOS technology achieves a maximum throughput of 55 Mbytes/s on gigabit Ethernet, which is comparable to that of a high-performance disk locally attached to a host computer.  相似文献   
94.
In this article we present a perspective on next-generation mobile communications and services. As a preliminary research work on next-generation mobile communications, we exploit what next-generation mobile services will be (S. Ryu et al., May 2003). We define next-generation mobile services as a hierarchy of services consisting of three different service levels: the service areas, the service functionalities, and the service technologies. We derive these service levels by means of scenario-based analysis. Next we propose conceptual reference network architecture, focusing on the realization of the service technologies. We divide the network into four different parts: a user equipments and access part, a network service provisioning layer part, a network control layer part, and non-mobile network operator service pan, according to characteristics of information and service flows within a network. In this reference network architecture, service elements such as servers, processors, and gateways are placed in each network part to support the derived next-generation mobile services. Finally, we give a brief introduction of research and development activities for next-generation mobile communication systems and services in Korea.  相似文献   
95.
A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.  相似文献   
96.
This paper points out the incorrect expressions of Uenohara and Kanade (see ibid., vol.7, p.116-19, 1998), in the context of the representation of the eigenvectors based on the discrete cosine transform (DCT). With the repeated eigenvalues, the eigenvector matrix of the PxP real symmetric circulant matrix can be constructed using the singular value decomposition (SVD), where P denotes the number of uniformly rotated images. Or equivalently it can be formulated in terms of the discrete Hartley transform (DHT). An example with P=4 is presented to show the correctness of our analysis.  相似文献   
97.
A new controller for a digital audio amplifier with bit stream input is proposed. The proposed controller has excellent features such as wide error correction range and no limitation on the modulation index. The controller is implemented in the half-bridge class-D amplifier and performance is verified through experiments.  相似文献   
98.
This paper presents a new method for a visual cryptography scheme that uses phase masks and an interferometer. To encrypt a binary image, we divided it into an arbitrary number of slides and encrypted them using an XOR process with a random key or keys. The phase mask for each encrypted image was fabricated under the proposed phase‐assignment rule. For decryption, phase masks were placed on any path of the Mach‐Zehnder interferometer. Through optical experiments, we confirmed that a secret binary image that was sliced could be recovered by the proposed method.  相似文献   
99.
In this paper, we propose a new frequency synchronization algorithm for orthogonal frequency division multiplexing (OFDM) systems requiring only one training symbol, based on a conventional method which requires two training symbols. While the timing synchronization is obtained by using the conventional method, the carrier frequency offset is efficiently estimated by the proposed method. It is shown that the proposed method not only reduces the number of the training symbols but also possesses better performance than the conventional method without increase in complexity  相似文献   
100.
The effects of Nd2O3 and TiO2 addition on the microstructures and microwave dielectic properties of BaO-Nd2O3-TiO2 system were investigated. BaNd2Ti4O12 or BaNd2Ti5O14 phases were observed for compositions based on BaO/Nd2O3 = 1 ratio. The compositions deviated from BaO/Nd2O3 = 1 ratio were composed of major phases of BaNd2Ti4O12 or BaNd2Ti5O14, and the compound of Nd2O3 and TiO2 (Nd2Ti2O7) or that of BaO and TiO2 (BaTi4O9). The microstructure of ceramic with BaO·Nd2O3 ·4TiO2 composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing Nd2O3, the optimum sintering temperature with maximum density increased, and the dielectric constant( · r) and quality factor(Q) decreased due to the formation of secondary phases. With increasing TiO2/ the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ·f shifted toward positive direction. The dielectric ceramics with BaO/Nd2O3 = 1 showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号