Bandwidth and region division for broadband multi-cell networks

A cell planning technique termed BRD (bandwidth and region division) is presented for overcoming interference, maintaining QoS (quality of service) and improving channel capacity over OFDM (orthogonal frequency division multiplexing)-based broadband cellular networks. Through an optimal combination of sectorization and zero padding, bandwidth and region division is achieved that minimizes the outage probability for forward-link cell planning. In order to verify the effectiveness of the proposed algorithm, a Monte Carlo simulation is performed over multi-cell environments.     

A practical approach for statistical matching of output queueing

We study a practical approach to match the performance of an output-queued switch statistically. For this purpose, we propose a novel switching architecture called a multiple input/output-queued (MIOQ) switch that requires no speedup for providing sufficient switching bandwidth. To operate an MIOQ switch in a practical manner, we also propose a multitoken-based arbiter which schedules the switch at a high operation rate and a virtual first-in first-out queueing scheme which guarantees the departure order of cells belonging to the same traffic flow at output. Additionally, we show that the proposed switch can naturally provide asymmetric bandwidth for inputs and outputs, which may be important in dealing with the links with different bandwidth demands. Finally, we compare the performance of an MIOQ switch with that of an output-queued switch and discuss the design criteria to match the performance of an output-queued switch.     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

部分种子成分的特征X射线在等效生物材料中衰减的测定

用Ｓｉ（Ｌｉ）探测器实现了Ｎａ、Ｍｇ、Ｓ、Ｃｌ的特征Ｘ射线在有机膜中的相对衰减以及与Ｏ、Ｋ元素的特征Ｘ射线能量相当的Ｘ射线或轫致辐射在有机膜中的相对衰减，分别得出了它们减的数学描述，并把实验得到不同能量的Ｘ射线在有机膜中的质量吸收系数与Ｂｅｒｋｅｌｅｙ的ＯＣＧ软件计算出的结果相比，相关都小于３０％。     

The material properties of sulphonated phenolic resin reinforced cement mortars

The material properties of new sulphonated phenolic resin (SP) reinforced cement mortars have been investigated. SP was found to promote the dispersion of cement particles and to interact with Ca(OH)₂. As a result, the resulting mortars exhibit better workability, more compact structure and higher compressive strength than plain mortars. The mortar with 1 wt% SP present after 28 days curing exhibits a compressive strength of 66MPa, which is about 18% higher than that of plain mortar.