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51.
A 4-Mb CMOS SRAM having 0.2-μA standby current at a supply voltage of 3 V has been developed. Current-mirror/PMOS cross-coupled cascade sense-amplifier circuits have achieved the fast address access time of 23 ns. A new noise-immune data-latch circuit has attained power-reduction characteristics at a low operating cycle time without access delay. A 0.5-μm CMOS, four-level poly, two-level metal technology with a polysilicon PMOS load memory cell, yielded a small cell area of 17 μm2 and the very small standby current. A quadruple-array, word-decoder architecture allowed a small chip area of 122 mm2  相似文献   
52.
The constant-ratio-coupled multi-grain digital synchronizer (CRC-MGsynchronizer) is proposed as a means for making high-speed connections with very low power consumption, both among multiple chips such as processors, controllers, and storage devices, and among on-chip modules. The synchronizer not only provides a wide range of operating frequencies, but is fast locking and only occupies a small area on chip. Therefore, it contributes to large reductions in power consumption and costs. It is suitable for use in various low-power systems (e.g., battery-hungry mobile appliances and low-cost consumer electronic products). Three major techniques were applied to the design: 1)a multi-grain structure for the delay elements, which greatly reduces the number of gates while facilitating locking in a very small number of clock cycles;2) constant-ratio-coupled (CRC) delay lines (measurement versus generation)for flexible selection of the input-output delay; and 3) a new lock stage decision circuit (LSDC) scheme, conferring excellent testability. Moreover,the architecture is all-digital, and thus it has high process portability. By applying these techniques to a DDR memory interface circuit for a mobile application processor fabricated in 130-nm technology, we were able to reduce power consumption by 42% and chip area by 65% compared with a conventional implementation. Furthermore, the novel design spans a frequency range covering 12 times the minimum frequency.  相似文献   
53.
Three-dimensional microlocalization of adhesion molecules, i.e. ICAM-1 (intercellular adhesion molecule), VCAM-1 (vascular adhesion molecule), LFA-1 (lymphocyte function-associated antigen), Mac-1 (macrophage differentiation antigen) and VLA-4 (very late activation antigen), expressed on type-A synoviocyte (macrophage-like cell) and type-B synoviocyte (fibroblast-like cell), were detected by immuno-scanning electron microscopy (SEM) to investigate the immunoreactive microenvironment of the superficial synovial intima in lipopolysaccharide (LPS)-induced arthritis of the mouse knee. Type-B synoviocytes extended rich slender processes from the periphery and constructed a cytoplasmic network, to which ICAM-1 was restricted. VCAM-1 was expressed only in the LPS-stimulated group and was relatively limited to the microvilli of type-B synoviocytes. Type-A synoviocytes were located randomly among the network with a smoother surface and expressed Mac-1 and LFA-1, which were counter-receptors for ICAM-1, and VLA-4 for VCAM-1 on the microvilli or lamellipodia. Three-dimensional microlocalization of adhesion molecules suggests that the network constructed by cytoplasmic processes and microvilli of type-B synoviocytes forms the pathway for the migration or the foothold for the fixation of type-A synoviocytes and takes part in forming an immunoreactive environment in the articular cavity.  相似文献   
54.
A method to separate plasticity and creep is discussed for a quantitative evaluation of the plastic, transient creep, and steady-state creep deformations of solder alloys. The method of separation employs an elasto-plastic-creep constitutive model comprised of the sum of the plastic, transient creep, and steady-state creep deformations. The plastic deformation is expressed by the Ramberg-Osgood law, the steady-state creep deformation by Garofalo’s creep law, and the transient creep deformation by a model proposed here. A method to estimate the material constants in the elasto-plastic-creep constitutive model is also proposed. The method of separation of the various deformations is applied to the deformation of the lead-free solder alloy Sn/3Ag/0.5Cu and the lead-containing solder alloy Sn/37Pb to compare the differences in the plastic, transient creep, and steady-state creep deformations. The method of separation provides a powerful tool to select the optimum lead-free solder alloys for solder joints of electronic devices.  相似文献   
55.
Journal of Infrared, Millimeter, and Terahertz Waves - Millimeter waves (MMW) absorbed by skin or cornea may induce damage by heat. We have developed a 60 GHz MMW exposure-induced eye...  相似文献   
56.
The spectral linewidth observed in a 1.5 μm multiple-quantum-well distributed-feedback laser diode (MQW-DFB-LD) with 1500 μm cavity length is discussed. The spectral linewidth was drastically reduced in long-cavity MQW-DFB0-LDs through a reduction in threshold carrier density. A spectral linewidth of 250 kHz, the narrowest ever achieved, was obtained  相似文献   
57.
For the design of high-density electronic packages, finite element method (FEM) analyses to evaluate strength reliabilities of solder joints should be conducted by employing the material parameters which can precisely reflect the creep properties of solder joints in actual electronic equipment. To obtain accurate results of the structural analyses of the solder joints, a method to evaluate the steady-state creep deformation in situ must be developed. The indentation creep test is an effective method to evaluate the creep properties of the solder joints in situ; however, the creep properties obtained by this method do not give the same results as those obtained by tensile creep tests using bulk specimens. In this paper, the indentation creep test at 1 N loading for 9,000 s duration was experimentally conducted to confirm that the steady-state creep deformation obtained by the indentation creep test did not coincide with that by the tensile creep tests using bulk specimens. To identify the reason, the indentation creep simulation was conducted by FEM analysis. As a result, it was found that the reference area used to obtain the creep strain from the indentation creep test should be modified. A method to obtain the new reference area is proposed from comparisons of experiments with simulations. Finally, this paper shows that the creep properties obtained by the indentation creep test using the new reference area coincided with those obtained by tensile creep tests using bulk specimens.  相似文献   
58.
The objective of this study was to develop a model of ocular damage induced by 40, 75, and 95 GHz continuous millimeter waves (MMW), thereby allowing assessment of the clinical course of ocular damage resulting from exposure to thermal damage-inducing MMW. This study also examined the dependence of ocular damage on incident power density. Pigmented rabbit eyes were exposed to 40, 75, and 95 GHz MMW from a spot-focus-type lens antenna. Slight ocular damage was observed 10 min after MMW exposure, including reduced cornea thickness and reduced transparency. Diffuse fluorescein staining around the pupillary area indicated corneal epithelial injury. Slit-lamp examination 1 day after MMW exposure revealed a round area of opacity, accompanied by fluorescence staining, in the central pupillary zone. Corneal edema, indicative of corneal stromal damage, peaked 1 day after MMW exposure, with thickness gradually subsiding to normal. Three days after exposure, ocular conditions had almost normalized, though corneal thickness was slightly greater than that before exposure. The 50% probability of ocular damage (DD50) was in the order 40?>?95?≈?75 GHz at the same incident power densities.  相似文献   
59.
The direct measurement of scattering and total losses of very good uniform optical fibres has been proposed and verified for the first time by analysing the scattering light with the variation of input launching power of an He-Ne laser by an optical attenuator. The scattered light has been detected by the cubic detector at different positions along the fibre.  相似文献   
60.
An optical receiver, in which a GaInAs PIN photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of -30.4 dBm was obtained at 1.2 Gbit/s and 1.3 mu m wavelength.<>  相似文献   
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