Evaluation of long-term durability in high temperature resistant CFRP laminates under thermal fatigue loading

Thermal fatigue tests were conducted on high temperature resistant carbon fiber reinforced plastics cross-ply laminates to evaluate microscopic damage progress which affects macroscopic mechanical behavior of the laminates. Materials system used were thermoplastic polyetheretherketone based, AS4/PEEK and thermoset bismaleimide based, G40-800/5260. Several types of laminate configuration were used to clarify the effect of ply thickness on microscopic damage progress. Microscopic damages were observed using optical microscopy and soft X-ray radiography. Energy release rate associated with transverse cracking was calculated using variational analysis. The modified Paris law was used to predict transverse cracking. From comparison to mechanical fatigue test results, it is clarified that transverse crack accumulation rate was larger under thermal fatigue loading at same energy release rate range due to the dependence of the fracture toughness on temperature.     

High precision in Raman frequency achieved using real-time calibration with a neon emission line: application to three-dimensional stress mapping observations

A three-dimensional (3D) Raman mapping system with a real-time calibration function was developed for detecting stress distributions in solid materials from subtle frequency shifts in Raman spectra. An atomic emission line of neon at 918.3 cm(-1) when excited at 514.5 nm was used as a wavenumber standard. An emission spectrum of neon and a Raman spectrum from a sample were introduced into a single polychromator using a bifurcated optical fiber. These two spectra were recorded simultaneously on a charge-coupled device (CCD) detector using double-track mode. Energy deviation induced by the fluctuation of laboratory temperature, etc., was removed effectively using the neon emission line. High stability during long measurements was achieved. By applying curve fitting, positions of the Raman line were determined with precision of about 0.05 cm(-1). The present system was applied to measurements of residual pressure around mineral inclusions in a natural diamond: 3D stress mapping was achieved.     

Supersolidity and Disorder in Solid Helium 4

Supersolidity is a rather controversial issue which has been revived recently by a number of torsional oscillator (ac-rotation) experiments with solid helium 4. One possibility would be that the ground state of helium 4 crystals contains a Bose-Einstein condensate of mobile vacancies. However, the supersolid signal was shown to depend on sample history. In addition, dc-flow experiments show that superfluid transport of mass does not occur in solid helium, except if it contains appropriate grain boundaries. As a consequence, we believe that supersolidity is not an intrinsic property of helium single crystals, but that it is due to quenched disorder. We report experiments on pressure relaxation in and light scattering from solid samples, that give additional evidence for the existence of disorder in helium crystals. We also describe our recent study of the wetting properties of grain boundaries.      

The Surface Density of States of Superfluid 3He for Different Surface Boundary Conditions

We measured the complex transverse acoustic impedance of superfluid ³He in the B phase by coating a surface with ⁴He to study the boundary condition dependence of the surface bound states. Observed features in the temperature dependence were similar to those without ⁴He coating. However, temperatures showing singularities became higher and variations in the dependence became smaller. The small variations indicated that a specular surface was realized by the ⁴He coating. Increase in the singularity temperature indicated that the bandwidth of the surface Andreev bound states became broader by the coating.      

Influence of Ga2O3 addition on transparent conductive oxide films of In2O3-ZnO

Influence of incorporation of Ga in amorphous In-Zn-O transparent conductive oxide films was investigated as a function of Zn/(Zn + In). For In-Zn-O films with no Ga₂O₃, the range of Zn/(Zn + In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250 °C. With increasing Ga₂O₃ quantity, amorphous films were obtained even at a high substrate temperature of 250 °C in a wider range of Zn/(Zn + In) than that of In-Zn-O films with no Ga₂O₃. This means that the trend of crystallization at higher substrate temperature was disturbed with additional Ga incorporation. For the film deposited from ZnO:Ga (Ga₂O₃: 4.5-7.5 wt%) and In₂O₃ targets, we obtained a resistivity of 2.8 × 10⁻⁴ Ω cm, nearly the same value as that for an In-Zn-O film with no Ga₂O₃. The addition of more than 7.5 wt% Ga₂O₃ induced a widening of the optical band gap.     

Preparation of barium titanate nanoparticle sphere arrays and their dielectric properties

Barium titanate (BaTiO3) nanoparticles from 27 to 192 nm were prepared by the 2-step thermal decomposition method from barium titanyl oxalate nanoparticles. These particles were dispersed well into 1-propanol, and dense BaTiO3 nanoparticle sphere arrays without stress-field were prepared by the meniscus method. Temperature dependence of dielectric properties was successfully measured using these dense nanoparticle sphere arrays, and size effect on dielectric properties was discussed.