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61.
Mastrapasqua M. Luryi S. Belenky G.L. Garbinski P.A. Cho A.Y. Sivco D.L. 《Electron Devices, IEEE Transactions on》1993,40(8):1371-1377
A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal 相似文献
62.
Several studies have reported that the bulk aluminum (Al) concentration is increased in the brain in Alzheimer disease (AD), while other studies have failed to demonstrate an increase. Most of these investigations have had one or more methodological deficiencies, including lack of adequate neuropathological assessment; failure to age-match the control samples; small sample sizes, lacking statistical power; and geographical heterogeneity in the AD and control populations. The present population-based study of 92 clinically and histopathologically diagnosed AD patients and normal elderly nursing home residents was designed to avoid these potential biases. When a subsample of AD cases with the most severe brain pathology was compared with controls having no or minimal pathology, no statistically significant differences were found in the bulk aluminum concentration measured by graphite furnace atomic absorption spectrometry in frontal cortex (1.8 +/- 0.7 vs. 1.7 +/- 0.7 micrograms/g dry wt), temporal cortex (1.4 +/- 0.3 vs. 1.5 +/- 0.5 micrograms/g dry wt), liver (2.0 +/- 1.3 vs. 2.0 +/- 1.2 micrograms/g dry wt), or head of femur (2.4 +/- 1.6 vs. 2.2 +/- 1.0 micrograms/g ash wt). Within the whole series of 92 cases, there was no difference in the bulk aluminum concentration of the frontal cortex between individuals diagnosed as definite, probable, and possible cases of AD using the CERAD (Consortium to Establish a Registry for Alzheimer's Disease) criteria. The density of senile plaques and neurofibrillary tangles in frontal and temporal cortex showed no correlation with the bulk aluminum concentration. Logistic regression analyses, which controlled for age and sex, did not influence outcome for any of the comparisons. The data show conclusively that in AD, bulk aluminum concentration is not increased in two cortical brain regions that are selectively vulnerable to the neuropathological changes associated with this disorder. 相似文献
63.
M. Zandian J. G. Pasko J. M. Arias R. E. De Wames S. H. Shin 《Journal of Electronic Materials》1995,24(5):681-684
Measurements of 77K RoA and 300K reverse bias dynamic impedance (RdA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar
P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg1-xCdxTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as
n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents
at small and modest reverse bias. We have observed that RoA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature RdA values. Diode arrays with high room temperature RdA values at one volt reverse bias also have high RoA values at 77K. Similarly, low RdA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias
of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature
measurements of current-voltage characteristics to evaluate Hg1-xCdxTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria
for further study at lower temperatures. 相似文献
64.
Kyeongho Lee Yeshik Shin Sungjoon Kim Deog-Kyoon Jeong Kim G. Kim B. Da Costa V. 《Solid-State Circuits, IEEE Journal of》1998,33(5):816-823
In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd 相似文献
65.
Modern digital communication systems rely heavily on baseband signal processing for in-phase and quadrature (I-Q) channels, and complex number processing in low-voltage CMOS has become a necessity for channel equalization, timing recovery, modulation, and demodulation. In this work, redundant binary (RB) arithmetic is applied to complex number multiplication for the first time so that an N-bit parallel complex number multiplier can be reduced to two RE multiplications (i.e., an addition of N RB partial products) corresponding to real and imaginary parts, respectively. This efficient RE encoding scheme proposed can generate RB partial products with no additional hardware and delay overheads. A prototype 8-bit complex number multiplier containing 11.5 K transistors is integrated on 1.05×1.33 mm2 using 0.8 μm CMOS. The chip consumes 90 mW with 2.5 V supply when clocked at 200 MHz 相似文献
66.
C-G. Glander M. W. Rutland D. L. Cho A. Johansson H. Ringblom S. Jnsson H. K. Yasuda 《应用聚合物科学杂志》1993,49(1):39-51
Plasma polymers of three isomers of diaminocyclohexane (DACH) were deposited on polyethylene, SiO2, and mica at 20°C. The deposition rate was measured as a function of plasma density and power; a maximum was observed in the latter function. The deposition rate was highest for the monomer with the highest flow rate. The film refractive index was observed to increase with both power density and the degree of fragmentation in the plasma. Film composition was measured by elementary analysis, and was found to be almost identical for each of the three isomers; a mechanism for the polymerization reaction is proposed. The percentage of primary amino groups decreased with increasing power density and with film thickness. Surface force measurements of the thickness and refractive index agreed well with the corresponding ellipsometry values in dry air, and am adhesive force, independent of power density, was measured. When the film was exposed to water vapor, it swelled considerably and the adhesion was determined by capillary forces. Associated with swelling, at high power, was an extremely regular 2-ply rope pattern of protruding material. © 1993 John Wiley & Sons. Inc. 相似文献
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69.
The incidence of stress fractures is increasing among competitive and recreational athletes as well as among children and the elderly. By understanding the continuum of bone's response to stress and maintaining an appropriate index of suspicion, the health care provider can diagnose these injuries appropriately. An accurate history and examination is essential and will differentiate stress fractures from other stress reactions. The more common stress fractures are discussed. 相似文献
70.