Ni catalyst promotion of a Cis-selective Pd catalyst for canola oil hydrogenation

A Ni catalyst was added to a cis-selective Pd catalyst in an attempt to further improve the Pd catalyst's cis-selectivity and activity for canola oil hydrogenation. The system was tested under reaction conditions known to be suitable for cis-selective hydrogenation with the Pd catalyst (50 ppm Pd, 70 °C, and 5.2 MPa). Although inactive on its own under these conditions, the addition of 100 ppm Ni increased the hydrogenation activity (from 2.12 to 2.49 10⁻² min⁻¹). Further addition of Ni up to 1000 ppm resulted in no further improvements in activity. The trans isomer contents of the oils hydrogenated with Pd and the Pd/Ni systems were similar. The level of conjugated dienes decreased rapidly during hydrogenation with both Pd alone and with the Pd/Ni combination and no changes in conjugation were detected in the presence of the Ni catalyst alone. The increased activity of the Pd/Ni system over Pd alone was attributed to adsorption of catalyst poisons from the oil by Ni.     

二维多波束蜂窝网覆盖方法研究

提出一种基于二维多波束形成的蜂窝网覆盖方法,该方法旨在通过对平面阵阵元权矢量的控制,使所形成的波束在空域上呈非均匀蜂窝网结构,达到重点地区覆盖密度高,非重点区域覆盖密度低的目的,减小资源利用率,并重点分析了波束设计思路和权值的计算方法,仿真结果表明:该覆盖方法是有效的.     

憎水性栀子蓝色素制备的研究

以浓盐酸为催化剂,采用乙酸酐酯化处理水溶性栀子蓝色素,制备了憎水性栀子蓝色素.探讨了栀子蓝色素与乙酸酐料液比、反应时间和反应温度等因素对憎水性栀子蓝色素色价的影响.结果表明:采用料液比1:20,在常温下反应4 h,为制备憎水性栀子蓝色素的最优条件.同时,通过红外光谱、可见吸收光谱及溶解性对栀子蓝色素的酯化改性进行了初步的探讨.     

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.     

Catalytic oxidation of naphthalene using a Pt/Al2O3 catalyst

Polycylic aromatic hydrocarbons (PAHs) are listed as carcinogenic and mutagenic priority pollutants, belonging to the environmental endocrine disrupters. Most PAHs in the environment stem from the atmospheric deposition and diesel emission. Consequently, the elimination of PAHs in the off-gases is one of the priority and emerging challenges. Catalytic oxidation has been widely used in the destruction of organic compounds due to its high efficiency (or conversion of reactants), its economic benefits and good applicability.

This study investigates the application of the catalytic oxidation using Pt/γ-Al₂O₃ catalysts to decompose PAHs and taking naphthalene (the simplest and least toxic PAH) as a target compound. It studies the relationships between conversion, operating parameters and relevant factors such as treatment temperatures, catalyst sizes and space velocities. Also, a related reaction kinetic expression is proposed to provide a simplified expression of the relevant kinetic parameters.

The results indicate that the Pt/γ-Al₂O₃ catalyst used accelerates the reaction rate of the decomposition of naphthalene and decreases the reaction temperature. A high conversion (over 95%) can be achieved at a moderate reaction temperature of 480 K and space velocity below 35,000 h⁻¹. Non-catalytic (thermal) oxidation achieves the same conversion at a temperature beyond 1000 K. The results also indicate that Rideal–Eley mechanism and Arrhenius equation can be reasonably applied to describe the data by using the pseudo-first-order reaction kinetic equation with activation energy of 149.97 kJ/mol and frequency factor equal to 3.26 × 10¹⁷ s⁻¹.     

Local residence time,residence revolution,and residence volume distributions in twin‐screw extruders

This work was aimed at studying the overall, partial, and local residence time distributions (RTD); overall, partial and local residence revolution distributions (RRD) and overall, partial and local residence volume distributions (RVD) in a co‐rotating twin screw extruder, on the one hand; and establishing the relationships among them, on the other hand. Emphasis was placed on the effects of the type and geometry of mixing elements (a gear block and various types of kneading elements differing in staggering angle) and process parameters on the RTD, RRD and RVD. The overall and partial RTD were directly measured in‐line during the extrusion process and the local ones were calculated by deconvolution based on a statistical theory. The local RTD allowed comparing the mixing performance of mixing elements. Also it was confirmed both experimentally and theoretically that specific throughput, defined as a ratio of throughput (Q) over screw speed (N), controlled all the above three types of residence distributions, be they local, partial or overall. The RRD and RVD do not provide more information on an extrusion process than the corresponding RTD. Rather they are different ways of representing the same phenomena. POLYM. ENG. SCI., 48:19–28, 2008. © 2007 Society of Plastics Engineers     

Growth of highly orientated strontium barium niobate thin films on Si substrates through the sol–gel process using a K: SBN template layer

We report the growth of highly C-axis orientation of Sr _x Ba_1−x Nb₂O₆ (SBN) thin films on p-type (100) Si substrates by using a potassium-substituted SBN template layer with the sol–gel method. The crystallization of SBN thin films was found closely related to the potassium ion doping concentration and the postannealing temperature of the K-SBN template layer. Secondary ion mass spectrometry analysis showed that potassium elements were accumulated at the interface of the template layer and silicon substrate. SBN films postannealed at 750 °C with K-SBN template layer has a smaller full width at half maximum of X-ray rocking curve of 2.45° than that of 5.40° for the pure SBN films. By introducing a template layer, the surface morphologies of SBN films fabricated on silicon substrate were greatly improved.     

Global practical stabilization of planar linear systems in the presence of actuator saturation and input additive disturbance

In this note, we revisit the problem of global practical stabilization for planar linear systems subject to actuator saturation and input additive disturbances. A parameterized linear state feedback law is designed such that, by tuning the value of the parameter, all trajectories of the closed-loop system converge to an arbitrarily small neighborhood of the origin in a finite time and remain in there.     

Development of Stretch Solder Interconnections for Wafer Level Packaging

A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps.