DFR: an efficient directional flooding‐based routing protocol in underwater sensor networks

Unlike terrestrial sensor networks, underwater sensor networks (UWSNs) have salient features such as a long propagation delay, narrow bandwidth, and high packet loss over links. Hence, path setup‐based routing protocols proposed for terrestrial sensor networks are not applicable because a large latency of the path establishment is observed, and packet delivery is not reliable in UWSNs. Even though routing protocols such as VBF (vector based forwarding) and HHVBF (hop‐by‐hop VBF) were introduced for UWSNs, their performance in terms of reliability deteriorates at high packet loss. In this paper, we therefore propose a directional flooding‐based routing protocol, called DFR, in order to achieve reliable packet delivery. DFR performs a so‐called controlled flooding, where DFR changes the number of nodes which participate in forwarding a packet according to their link quality. When a forwarding node has poor link quality to its neighbor nodes geographically advancing toward the sink, DFR allows more nodes to participate in forwarding the packet. Otherwise, a few nodes are enough to forward the packet reliably. In addition, we identify two types of void problems which can occur during the controlled flooding and introduce their corresponding solutions. Our simulation study using ns‐2 simulator proves that DFR is more suitable for UWSNs, especially when links are prone to packet loss. Copyright © 2011 John Wiley & Sons, Ltd.     

Optical properties of Si0.8Ge0.2/Si multiple quantum wells

The optical property was studied on the Si_0.8Ge_0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm⁻¹, corresponding to the vibration of Si–Si, Si–Ge, and Ge–Ge phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si_0.8Ge_0.2/Si MQW. For Si_0.8Ge_0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electron–heavy hole (e–hh) and electron–light hole (e–lh) fundamental excitonic transitions.     

Resistive switching characteristics of ultra-thin TiOx

We investigated the resistive switching characteristics of Ir/TiO_x/TiN structure with 50 nm active area. We successfully formed ultra-thin (4 nm) TiO_x active layer using oxidation process of TiN BE, which was confirmed by X-ray Photoelectron Spectroscopy (XPS) depth profiling. Compared to large area device (50 μm), which shows only ohmic behavior, 250 and 50 nm devices show very stable resistive switching characteristics. Due to the formation and rupture of oxygen vacancies induced conductive filament at Ir and TiO_x interface, bipolar resistive switching was occurred. We obtained excellent switching endurance up to 10⁶ times with 100 ns pulse and negligible degradation of each resistance state at 85 °C up to 10⁴ s.     

Analysis of adaptive bandwidth allocation in wireless networks with multilevel degradable quality of service

A wireless/mobile network supporting multilevel quality of service (QoS) is considered. In such a network, users or applications can tolerate a certain degree of QoS degradation. Bandwidth allocation to users can, therefore, be adjusted dynamically according to the underlying network condition so as to increase bandwidth utilization and service provider's revenue. However, arbitrary QoS degradation may be unsatisfactory or unacceptable to the users, hence resulting in their subsequent defection. Instead of only focusing on bandwidth utilization or blocking/dropping probability, two new user-perceived QoS metrics, degradation ratio and upgrade/degrade frequency, are proposed. A Markov model is then provided to derive these QoS metrics. Using this model, we evaluate the effects of adaptive bandwidth allocation on user-perceived QoS and show the existence of trade offs between system performance and user-perceived QoS. We also show how to exploit adaptive bandwidth allocation to increase system utilization (for the system administrator) with controlled QoS degradation (for the users). By considering various mobility patterns, the simulation results are shown to match our analytical results, demonstrating the applicability of our analytical model to more general cases.     

Fine‐Grained FSMD Power Gating Considering Power Overhead

As a fine‐grained power gating method for achieving greater power savings, our approach takes advantage of the finite state machine with a datapath (FSMD) characteristic which shows sequential idleness among subcircuits. In an FSMD‐based power gating, while only an active subcircuit is expected to be turned on, more subcircuits should be activated due to the power overhead. To reduce the number of missed opportunities for power savings, we deactivated some of the turned‐on subcircuits by slowing the FSMD down and predicting its behavior. Our microprocessor experiments showed that the power savings are close to the upper bound.     

A comparative study of bandwidth reservation and admission control schemes in QoS‐sensitive cellular networks

This paper compares five different schemes – called CHOI, NAG, AG, BHARG, and NCBF – for reserving bandwidths for handoffs and admission control for new connection requests in QoS‐sensitive cellular networks. CHOI and NAG are to keep the handoff dropping probability below a target value, AG is to guarantee no handoff drops through per‐connection bandwidth reservation, and BHARG and NCBF use another type of per‐connection bandwidth reservation. CHOI predicts the bandwidth required to handle handoffs by estimating possible handoffs from adjacent cells, then performs admission control for each newly‐requested connection. On the other hand, NAG predicts the total required bandwidth in the current cell by estimating both incoming and outgoing handoffs at each cell. AG requires the set of cells to be traversed by the mobile with a newly‐requested connection, and reserves bandwidth for each connection in each of these cells. The last two schemes reserve bandwidth for each connection in the predicted next cell of a mobile where the two schemes use different admission control policies. We adopt the history‐based mobility estimation for the first two schemes. Using extensive simulations, the five schemes are compared quantitatively in terms of (1) handoff dropping probability, connection‐blocking probability, and bandwidth utilization; (2) dependence on the design parameters; (3) dependence on the accuracy of mobility estimation; and (4) complexity. The simulation results indicate that CHOI is the most desirable in that it achieves good performance while requiring much less memory and computation than the other four schemes. This revised version was published online in July 2006 with corrections to the Cover Date.     

Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads

The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads in the substrate, which was printed with Sn-3.5Ag paste. Joints were fabricated by reflowing the solder paste. In the solder joints fabricated using Au stud bumps, Au-Sn intermetallics spread over the whole joints, and the solder remained randomly island-shaped. The δ-AuSn, ε-AuSn₂, and η-AuSn₄ intermetallic compounds formed sequentially from the Au stud bump. The microstructure of the solder joints did not change significantly even after multiple reflows. The AuSn₄ was the main phase after reflow because of the fast dissolution of Au. In the solder joints fabricated using Cu stud bumps, the scallop-type Cu₆Sn₅ intermetallic was formed only at the Cu interface, and the solder was the main phase. The difference in the microstructure of the solder joints with Au and Cu stud bumps resulted from the dissolution-rate difference of Au and Cu into the solder.     

A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

This paper presents a dual-band voltage-controlled oscillator (VCO) that can be reconfigured between 6- and 9-GHz frequency bands. It comprises a 6-GHz LC-tuned VCO, two 1/2 dividers, two mixers, and two 3-GHz notch filters. The 9-GHz output is generated based on the analog frequency multiplication method by mixing the 6-GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18-/spl mu/m SiGe BiCMOS technology, achieves a fast reconfiguration time of 3.6 ns. The measured VCO phase noises are -106 and -104 dBc/Hz at 1-MHz offset for 6- and 9-GHz modes, respectively, while draining 10.8 mA from a 1.8-V supply.