首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   80篇
  免费   4篇
化学工业   15篇
机械仪表   4篇
建筑科学   1篇
能源动力   1篇
轻工业   9篇
无线电   11篇
一般工业技术   15篇
冶金工业   24篇
原子能技术   1篇
自动化技术   3篇
  2022年   4篇
  2021年   4篇
  2019年   2篇
  2018年   5篇
  2017年   1篇
  2016年   1篇
  2015年   2篇
  2014年   4篇
  2013年   3篇
  2012年   3篇
  2010年   5篇
  2009年   1篇
  2008年   2篇
  2007年   2篇
  2006年   1篇
  2005年   3篇
  2004年   3篇
  2001年   1篇
  2000年   2篇
  1998年   13篇
  1997年   1篇
  1996年   1篇
  1995年   4篇
  1994年   4篇
  1992年   2篇
  1991年   2篇
  1990年   1篇
  1989年   1篇
  1988年   3篇
  1986年   1篇
  1966年   1篇
  1926年   1篇
排序方式: 共有84条查询结果,搜索用时 15 毫秒
41.
Switching and control of efficient red, green, and blue active matrix organic light‐emitting devices (AMOLEDs) by printed organic thin‐film electrochemical transistors (OETs) are demonstrated. These all‐organic pixels are characterized by high luminance at low operating voltages and by extremely small transistor dimensions with respect to the OLED active area. A maximum brightness of ≈900 cd m?2 is achieved at diode supply voltages near 4 V and pixel selector (gate) voltages below 1 V. The ratio of OLED to OET area is greater than 100:1 and the pixels may be switched at rates up to 100 Hz. Essential to this demonstration are the use of a high capacitance electrolyte as the gate dielectric layer in the OETs, which affords extremely large transistor transconductances, and novel graded emissive layer (G‐EML) OLED architectures that exhibit low turn‐on voltages and high luminescence efficiency. Collectively, these results suggest that printed OETs, combined with efficient, low voltage OLEDs, could be employed in the fabrication of flexible full‐color AMOLED displays.  相似文献   
42.
The dose induced threshold voltage shift of fully-depleted NMOS transistors is strongly correlated with charge trapping in the buried oxide. Thinner buried oxides, which are less dose sensitive than thicker ones, not necessarily improve the radiation hardness of fully-depleted transistors because of the higher coupling effect. The lateral parasitic transistor is more affected by the buried oxide charge trapping than the main active transistor. The lateral and back surface conduction in the thin part of the mesa edge, increases with ionizing dose and adds to the front surface conduction. Body tie is the only lateral isolation immune to dose effects  相似文献   
43.
44.
Obesity plays a central role in the development of skeletal muscle insulin resistance. The molecular mechanism causing skeletal muscle insulin resistance in obese people is still poorly understood. It has been speculated that circulating factors derived from adipose tissue impair insulin signalling in the skeletal muscle cell. TNF-alpha and leptin, which are overproduced in fat tissue of obese insulin resistant animal models and in obese humans, might mediate such an inhibitory effect on insulin signalling in skeletal muscle. The aim of the present study was to evaluate whether circulating TNF-alpha and leptin correlates to the individual skeletal muscle insulin sensitivity in individuals with different degrees of obesity and insulin resistance. We measured circulating TNF-alpha and leptin values in non diabetic offsprings of NIDDM patients. 36 German and 47 Finnish subjects participated in the study. The GDR of each participant was determined by the euglycemic hyperinsulinemic clamp technique, a range between 1.37 to 14.01 mg/kg LBM x min was observed. Percent of desirable body weight (PDW) covered also a wide range (87.58% to 197.06%). Although linear regression analysis suggested a dependence between TNF-alpha and GDR (Germany group: r = -0.37, p < 0.05, Finnish group: r = -0.32, p < 0.05) and a dependence between TNF and PDW (German group: r = 0.46, p < 0.05, Finnish group: r = 0.38, p < 0.05), in multiple linear regression analysis only the correlation with PDW was significant. Leptin levels were measured from 29 German and 36 Finnish subjects and a strong association was found between leptin and PDW (German group: r = 0.55, p < 0.05, Finnish group: r = 0.73, p < 0.05). In contrast, leptin levels did not correlate with GDR and TNF-alpha. In summary, even though, in a few insulin resistant subjects, higher circulating TNF-alpha or leptin levels with the individual insulin sensitivity can be demonstrated, the data suggest that the circulating pool of TNF-alpha and leptin in blood is unlikely to be a major contributing factor for obesity induced insulin resistance in the vast majority of individuals at high risk to develop NIDDM.  相似文献   
45.
46.
47.
We describe the characterization, cloning, and genetic analysis of tripeptidyl peptidase II (TPP II) from Drosophila melanogaster. Mammalian TPP II removes N-terminal tripeptides, has wide distribution, and has been identified as the cholecystokinin-degrading peptidase in rat brain. Size exclusion and ion exchange chromatography produced a 70-fold purification of dTPP II activity from Drosophila tissue extracts. The substrate specificity and the inhibitor sensitivity of dTPP II is comparable to that of the human enzyme. In particular, dTPP II is sensitive to butabindide, a specific inhibitor of the rat cholecystokinin-inactivating activity. We isolated a 4309-base pair dTPP II cDNA which predicts a 1354-amino acid protein. The deduced human and Drosophila TPP II proteins display 38% overall identity. The catalytic triad, its spacing, and the sequences that surround it are highly conserved; the C-terminal end of dTPP II contains a 100-amino acid insert not found in the mammalian proteins. Recombinant dTPP II displays the predicted activity following expression in HEK cells. TPP II maps to cytological position 49F4-7; animals deficient for this interval show reduced TPP II activity.  相似文献   
48.
Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths ranging from 0.4 μm down to 0.1 μm. The hot-carrier-induced device degradations are analyzed using systematic stress experiments with three main types of hot-carrier injections-maximum gate current (Vg≈Vd ), maximum substrate current (Vg≈Vd/2) and parasitic bipolar transistor (PBT) action (Vg≈0). A two-stage hot-carrier degradation is clearly observed for all the biasing conditions, for both N- and P-channel devices and for all the gate lengths. A quasi-identical threshold value between the power time dependence and the logarithmic time dependence is also highlighted for all the stress drain biases for a given channel length. These new findings allow us to propose a reliable method for lifetime prediction using accurate time dependence of degradation in a wide gate length range  相似文献   
49.
In this article, we describe a qualitative study of identities of 18 college students leading identity-based campus organizations at 1 large public institution. Identity-based organizations are those registered student groups whose mission includes serving the educational, cultural, social, or other needs and interests of students from a given psychosocial identity (e.g., race, ethnicity, gender, sexual orientation). We observed 2 paths that students followed through their leadership experience: (1) A “parallel” path in which students experienced their psychosocial identity and their leadership identity separately, and (2) a “merged” path in which students merged these identities into a sense of being, for example, a “gay leader” or a “Latina activist.” Based on our findings that student leaders in identity-based organizations experience both psychosocial identities and leadership identities as salient—whether parallel or merged—we make recommendations for higher education practice, policy, and research. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
50.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号