Air Filtration and Radon Decay Product Mitigation

Air cleaning as a means of mitigating the risks arising from exposure to indoor radon progeny has been evaluated in a single-family house in the north eastem US. using an automated, semi-continuous activity-weighted size distribution measurement system. The measurements included radon concentration, condensation nuclei count, and activity-weighted size distribution of radon decay products. Measurements were made in the house with and without an operating air filtration system and with various particle sources common to normal indoor activities operating. Aerosols were generated by running water in a shower, candle burning, cigarette smoking, vacuuming, opening doors, and cooking. Using a room model, the changes in attachment rates, average attachment diameters, and deposition rates of the unattached fraction with and without the air cleaning system were calculated. In the presence of active aerosol sources, the air filtration unit typically reduced the concentration of particles within the hour following the end of particle generation. After candle burning, cigarette smoking, and vacuuming in the bedroom, the reductions of PAEC by air filtration are about 60% with the air filtration system operating in the bedroom. During cooking in the kitchen, the reductions of PAEC in the bedroom with the air filtration system were about 40%. However, for all cases the dose reductions were smaller than the particle and PAEC reductions. For those particles that were generated within the bedroom, there was a 20% to 50% reduction in dose. In the case of cooking where the door was open and particles infiltrated from the rest of the house, the dose reduction was only 5% on average and appears to be insignificant. Thus, the dose reductions were h e r than the reductions in activity concentration, but there were no cases where the estimated dose actually increased.     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

Reply to comments on “Error rate performance of theprojection code”

The authors reply to the comments by Koppelaar and Tolhuizen (see ibid. vol.46, no.9, p.573, 1998). They state that the optimum choice of the slopes used to perform the encoding process in a projection code always results in maximizing the minimum Hamming distance so that d=2 ^r     

层状催化剂颗粒的优化设计——双组分等温平行反应体系

针对双组分等温平行反应体系,分析讨论了以提高催化剂活性和选择性为目标时催化剂活性组分的最优分布形式(为δ-函数分布),并给出了确定这种反应体系的催化剂的最佳活性层位置的计算方法。结果表明:以提高选择性为目标的最佳活性层位置比以提高活性为目标的要更靠近催化剂核心,实用的最优位置应介于二者之间。最后,本文还研究了反应动力学级数、本性选择性以及内扩散模数(Thiele 模数)等因素对最佳活性层位置的影响。     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

感光乳剂熔化三要素对熔化供料的影响

本文讨论了温度、搅拌和时间三要素对感光乳剂和工艺过程的影响，指出了上述影响的后果和严格过程控制的重要性，提出克服影响的措施。     

特征X射线能谱法测定Fe^＋注入小麦种子的深度

用１１０ｋｅＶ Ｆｅ＾＋离子束垂直注入小麦种胚后，在扫描电子显微镜上沿种子纵沟剖面，在不同深度上测量Ｆｅ元素被激发出的特征Ｘ射线强度分布，结果表明分布呈指数衰减，与晶体中的热扩散分布相类似，并对此进行了讨论。