酞菁铕及其C_(60)共混复合体系的发光特性研究

本文合成了稀土酞菁铕二聚体（ＨＥｕＰｃ２）,并对其发光特性进行了研究,发现晶型和溶剂对ＨＥｕＰｃ２的荧光特性影响较大;在２７５．５ｎｍ的紫外光激发下,晶型ａ的ＨＥｕＰｃ２在ＤＭＦ溶剂中可在６１５ｎｍ附近发出高亮度的红光。对ＨＥｕＰｃ２／Ｃ６０共混复合体系的荧光和紫外谱图分析发现Ｃ６０对ＨＥｕＰｃ２起猝灭作用。     

走进数字电源新时代

近来，市场对数字化电源的需求已大幅攀升。先进的半导体工艺技术不但使元器件速度更快、体积更小，而且它们还要求更低（密度更大）的供电电压和更高的供电电流；在此同时，最终系统的功能持续提升，而体积和平均售价则不断下降。这些因素迫使电源设计者要不断地开发出更精确、响应速度更快、效率更高、体积更小、成本更低和上市时间更快的电源产品。面对这些问题，传统模拟控制解决方案正逐渐变得束手无策。     

Control of nonmetallic inclusions of non-oriented silicon steel sheets by the rare earth treatment

Based on the industrial production of non-oriented silicon steel,the rare earth(RE) treatment during the Ruhrstahl Heraeus(RH) refining process was studied.The morphology and the size distribution were observed for the steel specimens treated with different RE treatment conditions.Furthermore,the formation and change of the nonmetallic inclusion characteristics of finished steel sheets after the RE treatment were discussed.The results have shown that in the present work,the suitable RE metal additions are 0.6-0.9 kg/t steel.After the suitable RE treatment,the formation of AlN and MnS inclusions were restrained,and the aggregation,flotation and removal of nonmetallic inclusions were efficiently promoted and the cleanliness of liquid steel was significantly increased.Meanwhile,the total oxygen concentration reached the minimum value and the desulfurization efficiency was optimal,and the type of main inclusions was approximately spherical or elliptical spherical RE radicle inclusions whose size was relatively large.     

提高同侧出钢钢包自开率的研究

通过对钢包自开的原理进行理论分析,显示钢水冻结层和渗透层厚度是影响钢包自开率的主要因素。结合工厂实际情况,采用硅铬质引流砂,研究了影响同侧放钢时钢包自开率的主要因素:放钢时出钢口与钢包水口的位置关系、引流砂中的钠长石及石墨含量等。通过将出钢口左侧偏离中心角6°,引流砂中的石墨外加量调至2%,钠长石外加量调至0.75%～1%,钢包自开率能稳定在95%左右。     

硅片中金属镍的沉淀和稳定

金属镍是大规模集成电路中常被发现的杂质，它的沉淀严重影响着集成电路的性能。本文阐述了在集成电路工艺中镍沾污的可能途径，镍在硅中的基本性质，说明了镍的沉淀性质和与硅材料扩散长度的关系，也说明了镍沉淀的稳定性。     

表面处理对反相微乳液中Ⅱ-Ⅵ族量子点的影响(英文)

以对二甲苯为连续相,水为分散相,聚(氧乙烯)-聚(氧丙烯)-聚(氧乙烯)嵌段聚合物为表面活性剂,制备ZnSe和ZnMnSe量子点.在量子点表面覆盖一层Zn(OH)2使其发生钝化,再加水引起相分离,选择合适的有机溶剂可从反相微乳液中成功分离出上述量子点,分离后的量子点保持荧光特性且量子点荧光有显著增强.经11-巯基十一烷酸表面修饰,分离的量子点可分散在水中形成透明溶液.采用X-射线衍射、透射电镜、动态激光光散射和荧光光度计表征晶体结构、形貌、尺寸分布和荧光特性,讨论了使量子点稳定的表面保护机理.研究结果表明,嵌段聚合物分子吸附在量子点表面,阻碍了其氧化进程,表面钝化可修补晶体部分缺陷,使分离的量子点荧光增强,稳定期达数月之久.     

Rapid communication Preparation of TiO_2 nanometer thin films with high photocatalytic activity by reverse micellar method

Two kinds of TiO2 nanometer thin films were prepared on stainless steel by the reverse micellar and sol-gel methods, respectively. The calcined TiO2 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), BET surface area and X-ray photoelectron spectroscopy (XPS). Photocatalytic activity was evaluated by photocatalytic decoloration of methyl orange aqueous solution. The results showed that the TiO2 thin films prepared by reverse micellar method (designated as RM-TiO2 films) showed higher photocatalytic activity than those by sol-gel method (designated as SG-TiO2 films). This is attributed to the fact that the former is composed of smaller monodispersed spherical particles with a size of about 15 nm and possesses higher surface areas.     

铸铁表面抗裂耐磨激光熔敷材料的研制

采用铁基熔敷材料 ,在不预热情况下通过调整熔敷金属Ni含量 ,改变铸铁激光熔敷层内奥氏体相与渗碳体相体积分数 ,进而抑制熔敷层裂纹的产生。在抗裂性最佳激光熔敷工艺参数基础上 ,研究了Ni对熔敷层奥氏体体积分数及表面裂纹率的影响 ,揭示了熔敷层开裂的微观机制 ,获得了搭接 2 5道熔敷层不裂的Fe C Si Ni系熔敷材料。以此熔敷材料为基础 ,改变钛粉含量 ,在熔敷层得到原位自生TiC ,研究了TiC对熔敷层耐磨性的影响 ,分析了TiC数量对熔敷层磨损形貌及磨损质量损失的影响规律 ,最终获得了可显著提高熔敷层抗裂性及耐磨性的Fe C Si Ni Ti熔敷材料。     

GaN和Al_xGa_(1-x)N薄膜材料研究进展

ＧａＮ及ＡｌｘＧａ１－ｘＮ是发兰光的关键材料，是目前光电子材料中最引人注目、必须攻克的课题。本文综述了ＧａＮ及ＡｌｘＧａ１－ｘＮ材料的研究现状，重点介绍了ＧａＮ及ＡｌｘＧａ１－ｘＮ材料近年来在性能评价、生长技术和应用开发方面的进展     

自截止腐蚀制备Si平面薄膜中的B杂质分析

以重掺杂自截止腐蚀工艺制备的厚度为3～4 μm的自支撑Si平面薄膜已在X光激光和惯性约束聚变分解实验中得到应用.制备过程中,重掺杂B杂质的引入会对获得的Si平面薄膜的应用带来影响.本工作研究采用次级离子质谱(SIMS)测量Si平面薄膜中B杂质的浓度分布,结合在软X光波段下同步辐射直接测得的Si薄膜的透过率结果,分析B等杂质对Si平面薄膜性能的影响.