A fully balanced pseudo-differential OTA with common-mode feedforward and inherent common-mode feedback detector

A pseudo-differential fully balanced fully symmetric CMOS operational transconductance amplifier (OTA) architecture with inherent common-mode detection is proposed. Through judicious arrangement, the common-mode feedback circuit can be economically implemented. The OTA achieves a third harmonic distortion of -43 dB for 900 mV/sub pp/ at 30 MHz. The OTA, fabricated in 0.5-/spl mu/m CMOS process, is used to design a 100-MHz fourth-order linear phase filter. The measured filter's group delay ripple is 3% for frequencies up to 100 MHz, and the measured dynamic range is 45 dB for a total harmonic distortion of -46 dB. The filter consumes 42.9 mW per complex pole pair while operating from a /spl plusmn/1.65-V power supply.     

OTA linearity enhancement technique for high frequency applications with IM3 below -65 dB

A technique to enhance the linearity of continuous-time operational transconductance amplifiers (OTA)-C filters working at high frequencies is proposed. Each OTA consumes 10.5 mW and the transconductance can be tuned from 70 to 160 /spl mu/A/V while the IM3 remains below -70 dB up to 50 MHz for a 1.3-V/sub pp/ differential input. For a 20-MHz low-pass second-order filter implementation, the measured IM3 with an input voltage of 1.3 V/sub pp/ is below - 65 dB. The supply voltage is 3.3 V. Experimental results of the circuit, fabricated in a standard CMOS 0.35-/spl mu/m technology, are presented.     

Effects of finite operational amplifier gain-bandwidth product on a switched-capacitor amplifier

The effects of the finite operational amplifier gain-bandwidth product GB on the performance of an inverting switched-capacitor amplifier are presented. Limitations of the GB and the clock frequency fc=1/T as well as GB.T are determined.     

A 30-MHz Fifth-Order Elliptic Low-Pass CMOS Filter With 65-dB Spurious-Free Dynamic Range

A fifth-order 30-MHz integrated low-pass filter with 65-dB spurious-free dynamic range is presented. The topology is based on an operational transconductance amplifier (OTA)-C ladder configuration implementing an elliptic transfer function. High linearity and low noise are achieved by using polysilicon resistors and efficient highly linear transconductors based on a proposed nonlinear source degeneration technique. The linearity of a typical source degenerated structure is improved by more than 10 dB while the small-signal transconductance is reduced by less than 1 dB; the additional power needed by the auxiliary circuitry is less than 10% that of the OTA's power, and the noise level increases by no more than 1 dB. Experimental results of a prototype fabricated in a standard 0.35-mum CMOS technology are presented and compared with previously reported solutions. The overall filter's power consumption is 85 mW with a 3.3-V power supply     

Enhancing general performance of folded cascode amplifier by recycling current

A modification to the conventional folded cascode transconductance amplifier is proposed. The proposed amplifier has the benefit of achieving a given set of design specifications while consuming a fraction of the power compared to the conventional folded cascode. Moreover, the proposed modification is robust even for low voltage applications.     

Determination of heterogeneous electron transfer kinetics in the presence of ultrasound at microelectrodes employing sampled voltammetry

The technique of sampled voltammetry at microelectrodes irradiated with ultrasound is demonstrated for the first time. This technique is used to determine the heterogeneous electron transfer rate constants for the redox couples ferrocene/ferrocenium, Ru(NH(3))(6)(3+/2+), and IrCl(6)(3)(-)/IrCl(6)(2)(-). Determination of the heterogeneous rate constants is also achieved for comparison purposes by analysis of fast sweep rate voltammetry of the redox systems studied at microelectrodes and comparison of the results obtained to the theory developed by Nicholson and Shain. The heterogeneous rate constants determined using sampled voltammetry were 1.0, 0.6, 1.23, and 0.18 cm s(-)(1) for the ferrocene/ferrocenium (0.1 mol dm(-)(3) TEATFB, CH(3)CN), Ru(NH(3))(6)(3+/2+) (0.1 mol dm(-)(3) KCl), IrCl(6)(3)(-) (1 mol dm(-)(3) KCl), and IrCl(6)(3)(-)/IrCl(6)(2)(-) (1 mol dm(-)(3) NaCl), respectively, in agreement with those obtained in the absence of ultrasound.     

Design of minimally invasive all-pole analog lowpass filters

In this paper, a new design technique for designing higher order minimally invasive lowpass filters is proposed. The proposed fully differential filter has been simulated in TSMC 130 nm technology for third and fourth orders. When compared with the conventional filter implementations such as a Tow-Thomas architecture, the proposed third order solution achieves a total in-band input-referred integrated noise of \(44.09\,\upmu V\) compared to \(78.83\,\upmu V\), achieved by a Tow-Thomas implementation. The proposed solution offers higher tolerance to blockers along with lesser number of active devices required. Though, the total capacitance used is increased from 23.82 pF to 89.82 pF, from third order Tow-Thomas filter to its minimally invasive filter counterpart, the power consumption reduces by \(77\,\%\) from third order Tow-Thomas to the third order minimally invasive filter.     

Frequency-dependent harmonic-distortion analysis of a linearized cross-coupled CMOS OTA and its application to OTA-C filters

Recent progress of wide-band communication systems demands high-frequency circuits. Conventionally, the linearity of the operational transconductance amplifier and capacitor (OTA-C) has been analyzed using Taylor series expansion. Unfortunately, this approach does not predict the frequency-dependent linearity degradation. Thus, to properly design linearized OTAs, the frequency dependence of these coefficients must be determined. In this paper, we present a frequency-dependent harmonic-distortion analytical method applied to a linear-enhanced OTA. This OTA, which is suitable for high-frequency operation, uses three linearization techniques simultaneously: 1) attenuation through floating-gate MOS transistors; 2) source degeneration; and 3) polynomial cancellation techniques. By using the harmonic-distortion analysis, some properties on the performance of OTA are used to improve the performance of OTA-C based circuits at high frequencies. A 0.5-/spl mu/m CMOS OTA simulation and experimental results are shown to verify the harmonic-distortion analytical method.     

A CMOS 140-mW fourth-order continuous-time low-pass filter stabilized with a class AB common-mode feedback operating at 550 MHz

A 550-MHz linear-phase low-pass continuous-time filter is described. The operational transconductance amplifier (OTA) is based on complementary differential pairs in order to achieve high-frequency operation. A common-mode feedback (CMFB) based on a Class AB amplifier with improved stability at high frequencies is introduced. Results for the stand alone OTA show a unity gain frequency of 1 GHz while the excess phase is less than 5/spl deg/. The filter is based on G/sub m/-C biquads and achieves IM3 <-40 dB for a two-tone input signal of -10 dBm each. The power consumption of the fourth-order filter is 140 mW from supply voltages of /spl plusmn/1.65 V. The chip was fabricated in a standard 0.35-/spl mu/m CMOS technology.     

A 92-MHz 13-bit IF digitizer using optimized SC integrators in 0.35-/spl mu/m CMOS technology

A feedforward compensation scheme with no Miller capacitors is proposed to overcome the bandwidth limitations of traditional Miller compensation schemes. The technique has been used in the design of an operational transconductance amplifier (OTA) with a dc gain of 80 dB, gain bandwidth of 1.4 GHz, phase margin of 62/spl deg/, and 2 ns settling time for 2-pF load capacitor in a standard 0.35-/spl mu/m CMOS technology. The OTA's current consumption is 4.6 mA. The OTA is used in the design of a fourth-order switched-capacitor bandpass /spl Sigma//spl Delta/ modulator with a clock frequency of 92 MHz. It achieves a peak signal-to-noise ratio of 80 and 54 dB for 270-kHz (GSM) and 3.84-MHz (CDMA) bandwidths, respectively and consumes 19 mA of current from a /spl plusmn/1.25-V supply.