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101.
An integral method is investigated and developed in the current work. The effects of the parameters of inlet distortions
on the trend of downstream flow feature in compressor are simulated. Other than the drag-to-lift ratio of the blade and the
inlet incidence angle, it is found that the distorted inlet velocity is another essential parameter to control the distortion
in propagation. Based on this study, a novel critical distortion line and corresponding critical distortion factor are proposed
to express the effect of the two essential inlet parameters on the propagation of distortion, namely, the inlet incidence
angle and the distorted inlet velocity. From the viewpoint of compressor efficiency, the propagation of inlet flow distortion
is further described by a compressor critical performance and its critical characteristic. The results present a useful physical
insight to an axial flow compressor behavior and asymptotic behavior of the propagation of inlet distortion, and confirm the
active role of compressor in determining the velocity distribution when compressor responds to an inlet flow distortion.
Received: 20 December 2001 / Accepted: 21 August 2002
The authors would like to thank HQ RSAF for permission to publish this work, their financial support and encouragement. The
first author wants to acknowledge Prof. Frank Marble of California Institute of Technology, for bringing the problem to the
author's attention and for his helpful discussion. 相似文献
102.
针对高职高专培养应用型人才的要求,分析了目前电工学课程教学的现状,提出了电工学课程改革方案。 相似文献
103.
104.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
105.
MA Perrella C Patterson L Tan SF Yet CM Hsieh M Yoshizumi ME Lee 《Canadian Metallurgical Quarterly》1996,271(23):13776-13780
106.
Tan W.S. Uren M.J. Houston P.A. Green R.T. Balmer R.S. Martin T. 《Electron Device Letters, IEEE》2006,27(1):1-3
A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface. 相似文献
107.
108.
Ng J.S. Tan C.H. David J.P.R. Hill G. Rees G.J. 《Electron Devices, IEEE Transactions on》2003,50(4):901-905
Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes. 相似文献
109.
110.
谈国新 《华中科技大学学报(城市科学版)》1994,(2)
本文提出了一种基于自然数线性八叉树的优化构造算法。该算法以活动结点表为中间辅助结构,在图像输入过程中直接生成基于N码的八叉树叶结点.与常规构造算法相比,新提出的优化构造算法省去了N码的计算及合并过程,从而具有较高的时空效率. 相似文献