A scalable algorithm for mining maximal frequent sequences using a sample

In this paper, we propose an efficient scalable algorithm for mining Maximal Sequential Patterns using Sampling (MSPS). The MSPS algorithm reduces much more search space than other algorithms because both the subsequence infrequency-based pruning and the supersequence frequency-based pruning are applied. In MSPS, a sampling technique is used to identify long frequent sequences earlier, instead of enumerating all their subsequences. We propose how to adjust the user-specified minimum support level for mining a sample of the database to achieve better overall performance. This method makes sampling more efficient when the minimum support is small. A signature-based method and a hash-based method are developed for the subsequence infrequency-based pruning when the seed set of frequent sequences for the candidate generation is too big to be loaded into memory. A prefix tree structure is developed to count the candidate sequences of different sizes during the database scanning, and it also facilitates the customer sequence trimming. Our experiments showed MSPS has very good performance and better scalability than other algorithms. Congnan Luo received the B.E. degree in Computer Science from Tsinghua University, Beijing, P.R. China, in 1997, the M.S. degree in Computer Science from the Institute of Software, Chinese Academy of Sciences, Beijing, P.R. China, in 2000, and the Ph.D. degree in Computer Science and Engineering from Wright State University, Dayton, OH, in 2006. Currently he is a technical staff at the Teradata division of NCR in San Diego, CA, and his research interests include data mining, machine learning, and databases. Soon M. Chung received the B.S. degree in Electronic Engineering from Seoul National University, Korea, in 1979, the M.S. degree in Electrical Engineering from Korea Advanced Institute of Science and Technology, Korea, in 1981, and the Ph.D. degree in Computer Engineering from Syracuse University, Syracuse, New York, in 1990. He is currently a Professor in the Department of Computer Science and Engineering at Wright State University, Dayton, OH. His research interests include database, data mining, Grid computing, text mining, XML, and parallel and distributed processing.     

A study of roll‐printing technology for TFT‐LCD fabrication

Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used.     

Technology application in project-based learning

Project-based learning is a student-centered comprehensive instructional approach where students collectively engage themselves in complex learning tasks. Recent advances in educational technologies have made student-centered learning in a technology rich environment both possible and feasible. This paper will report part of a larger study carried out at a school in the United States of America on the use ofconstructivism and technology in project-based learning. Data collection techniques included those typically associated with qualitative field research. In this paper, the technological infrastructure of the school and how technology is used in one of the project-based learning classes will be provided. Based on this study, some suggestions are also provided on how technology can be used in the context of other countries including in Malaysia.     

Electron beam lithography-assisted fabrication of Au nano-dot array as a substrate of a correlated AFM and confocal Raman spectroscopy

This paper documents a study of an Au nano-dot array that was fabricated by electron beam lithography on a glass wafer. The patterns that had features of 100nm dots in diameter with a 2-mum pitch comprised a total area of 200x200mum(2). The dot-shaped Cr underlayer was open to the air after developing Poly(methyl methacrylate) (PMMA). When dipped into the Cr etchant, the exposed Cr layer was eliminated from the glass wafer in a short period of time. In order to ultimately fabricate the Ti/Au dot arrays, Ti and Au were deposited onto the arrays with a thickness of 2 and 40nm, respectively. The lift-off procedure was carried out in the Cr etchant using sonication in order to completely remove the residual Cr/PMMA layer. The fabricated Au nano-dot array was then immersed in an Ag enhancing solution and then into an ethanol solution containing (N-(6-(Biotinamido)hexyl)-3'-(2'-pyridyldithio)-propionamide (Biotin-HPDP). The substrate was analyzed using a correlated atomic force microscopy (AFM) and confocal Raman spectroscopy. Through this procedure, position-dependent surface-enhanced Raman spectroscopy (SERS) signals could be obtained.     

A modified low-pass filter with progressively diminishing ripples

A modified low-pass filter functions are proposed. A modified inverse Chebyshev function possesses progressively diminishing ripples in the stopband whereas the modified Chebyshev function exhibits ripples diminishing toward = 0 in the passband.Both are realizable in the doubly-terminated ladder structures for the ordern even or odd, thus lending themselves amenable to high-quality activeRC or switched capacitor filters through the simulation techniques.     

Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes

Conventionally, lifetests of semiconductor laser diodes usually involved operating the devices continuously at either constant power output or drive current, with periodic recording of their characteristics. In this paper, some effects arising from interrupted lifetest of 1.3 m GaInAsP-InP inverted-rib laser diodes are reported. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet respectively at 50°C, followed by a period during which the lifetest is interrupted and the devices left unbiased at room temperature. Subsequently, the devices were put back on constant power biasing at 50°C. Among a number of parameters, pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed, indicating strong recovery effects commencing from the time when the life-test was interrupted. Redistribution of mobile defects in the cladding layer is postulated to be the cause of the degradation recovery, and the data supports the occurrence of an aging-current dependent defect annihilation mechanism. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices.     

Polar Perturbations in Functional Oxide Heterostructures

Growth and characterization of metal-oxide thin films foster successful development of oxide-material-integrated thin-film devices represented by metal-oxide-semiconductor field-effect transistors (MOSFET), drawing enormous technological and scientific interest for several decades. In recent years, functional oxide heterostructures have demonstrated remarkable achievements in modern technologies and provided deeper insights into condensed-matter physics and materials science owing to their versatile tunability and selective amplification of the functionalities. One of the most critical aspects of their physical properties is the polar perturbation stemming from the ionic framework of an oxide. By engineering and exploiting the structural, electrical, magnetic, and optical characteristics through various routes, numerous perceptive studies have clearly shown how polar perturbations advance functionalities or drive exotic physical phenomena in complex oxide heterostructures. In this review, both intrinsic (engraved by thin-film heteroepitaxy) and extrinsic (reversibly controllable defect-mediated disorder and polar adsorbates) elements of polar perturbations, highlighting their abilities for the development of highly tunable functional properties are summarized. Scientifically, the recent approaches of polar perturbations render one to consolidate a prospect of atomic-level manipulation of polar order in epitaxial oxide thin films. Technologically, this review also offers useful guidelines for rational design to heterogeneously integrated oxide-based multi-functional devices with high performances.     

Correlated Quantum Phenomena of Spin–Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3 Based Artificial Superlattices

Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d perovskite oxide superlattices, in which the spin–orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, J_eff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.     

Chain Vacancies in 2D Crystals

Defects in bulk crystals can be classified into vacancies, interstitials, grain boundaries, stacking faults, dislocations, and so forth. In particular, the vacancy in semiconductors is a primary defect that governs electrical transport. Concentration of vacancies depends mainly on the growth conditions. Individual vacancies instead of aggregated vacancies are usually energetically more favorable at room temperature because of the entropy contribution. This phenomenon is not guaranteed in van der Waals 2D materials due to the reduced dimensionality (reduced entropy). Here, it is reported that the 1D connected/aggregated vacancies are energetically stable at room temperature. Transmission electron microscopy observations demonstrate the preferential alignment direction of the vacancy chains varies in different 2D crystals: MoS₂ and WS₂ prefer direction, while MoTe₂ prefers direction. This difference is mainly caused by the different strain effect near the chalcogen vacancies. Black phosphorous also exhibits directional double‐chain vacancies along 〈01〉 direction. Density functional theory calculations predict that the chain vacancies act as extended gap (conductive) states. The observation of the chain vacancies in 2D crystals directly explains the origin of n‐type behavior in MoTe₂ devices in recent experiments and offers new opportunities for electronic structure engineering with various 2D materials.     

Mesoporous Germanium Anode Materials for Lithium‐Ion Battery with Exceptional Cycling Stability in Wide Temperature Range

Porous structured materials have unique architectures and are promising for lithium‐ion batteries to enhance performances. In particular, mesoporous materials have many advantages including a high surface area and large void spaces which can increase reactivity and accessibility of lithium ions. This study reports a synthesis of newly developed mesoporous germanium (Ge) particles prepared by a zincothermic reduction at a mild temperature for high performance lithium‐ion batteries which can operate in a wide temperature range. The optimized Ge battery anodes with the mesoporous structure exhibit outstanding electrochemical properties in a wide temperature ranging from ?20 to 60 °C. Ge anodes exhibit a stable cycling retention at various temperatures (capacity retention of 99% after 100 cycles at 25 °C, 84% after 300 cycles at 60 °C, and 50% after 50 cycles at ?20 °C). Furthermore, full cells consisting of the mesoporous Ge anode and an LiFePO₄ cathode show an excellent cyclability at ?20 and 25 °C. Mesoporous Ge materials synthesized by the zincothermic reduction can be potentially applied as high performance anode materials for practical lithium‐ion batteries.