An Insight into the DC and Analog/RF Response of a Junctionless Vertical Super-Thin Body FET towards High-K Gate Dielectrics

Silicon - In this work, the junctionless (JL) feature is incorporated in a newly invented device called vertical super-thin body (VSTB) FET and a comparative exploration of DC and analog/RF figures...     

Physics & Modeling of Ambipolar Snapback Behavior in Gate Grounded NMOS

Silicon - This paper models first snapback ambipolar action in NMOS, when subjected to high current stress across the drain terminal. We analyze 2 − D ambipolar current in Gate Grounded NMOS...