Effect of oval defects in GaAs on the reliability of SiNx metal–insulator–metal capacitors

In this paper, we will assess the reliability of extrinsic defects in SiN_x metal–insulator–metal (MIM) capacitors as part of a GaAs high voltage (HV) FET process. The epitaxial GaAs layers used for this process contain a density of oval defects. Since the SiN_x is deposited at low temperatures, the MIM capacitors are amorphous and will always contain a certain amount of extrinsic defects. It will be shown that the number of extrinsic defects depends on the presence of the oval defects in the epitaxial GaAs layers. The reliability assessment will be done using electric field breakdown (Ebd), time dependent dielectric breakdown (TDDB) measurements and visual inspection. It will be shown that this combination can lead to an estimate of the lifetime and screening of capacitors containing extrinsic defects.     

Analysis of Cu/low-k bond pad delamination by using a novel failure index

For the development of state-of-the-art Cu/low-k CMOS technologies, the integration and introduction of new low-k materials is one of the major bottlenecks owing to the bad thermal and mechanical integrity of these materials and the inherited weak interfacial adhesion. Especially the forces resulting from packaging related processes such as dicing, wire bonding, bumping and molding are critical and can easily result in cracking, delamination and chipping of the IC back-end structure if no appropriate measures are taken. This paper presents a methodology for optimizing the thermo-mechanical reliability of bond pads by using a 3D multi-scale finite element approach. An important characteristic of this methodology is the use of a novel energy-based failure index, which allows a fast qualitative comparison of different back-end structures. The usability of the methodology will be illustrated by a case study in which several bond pad structures are analysed.     

The true dimension of certain binary Goppa codes

By applying a result from algebraic geometry due to E. Bombieri (Amer. J. Math., vol.88, p.71-105, 1966), the true dimension of certain binary Goppa codes is calculated. The results lead in many cases to an improvement of the usual lower bound for the dimension     

Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain

GaInP/AlGaInP double heterostructure lasers can be obtained with either TE or TM polarised emission. In addition it it shown that, by using appropriate samples, TE or TM lasing can be selected by changing the temperature or the cavity length.<>     

Direction-of-arrival estimation for constant modulus signals

In many cases where direction finding is of interest, the signals impinging on an antenna array are known to be phase modulated and, hence, to have a constant modulus (CM). This is a strong property; by itself, it is already sufficient for source separation and can be used to construct improved direction finding algorithms. We first derive the relevant Cramer-Rao bounds (CRBs) for arbitrary array configurations and specialize to uniform linear arrays. We then propose a simple suboptimal direction estimation algorithm in which the signals are separated using the CM property followed by direction finding on the decoupled signals. Compared with the ESPRIT algorithm and the CRB for arbitrary signals, the algorithm shows good results     

Tunneling-based SRAM

This paper describes a new high-density low-power circuit approach for implementing static random access memory (SRAM) using low current density resonant tunneling diodes (RTDs). After an overview of semiconductor random access memory architecture and technology, the concept of tunneling-based SRAM (TSRAM) is introduced. Experimental results for a compound semiconductor 1-bit 50-nW TSRAM gain cell using low current density (~1 A/cm²) RTDs and low-leakage heterostructure field effect transistors are presented. We describe a one-transistor TSRAM cell which could convert silicon dynamic RAM (DRAM) to ultradense SRAM if an ultralow current density (~1 μA/cm² ) silicon bistable device is developed. Finally, we present experimental and simulation results for a TSRAM cell using multipeaked I-V curve devices and a multivalued word line. This approach aims at increasing storage density through vertical integration of bistable devices such as RTD's     

Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions

The mechanical response at the interface between the silicon, low-k and copper layer of the wafer is simulated herein under the loading of the chemical-mechanical polishing (CMP). To identify the possible generation/propagation of the initial crack, the warpage induced by the thin-film fabrication process are considered, and applying pressure, status of slurry and the copper thickness are treated as the parameter in the simulation. Both the simulation and experimental results indicate that the large blanket wafer within high applying pressure would exhibit high stresses possible to delaminate the interface at the periphery of the wafer, and reducing the copper thickness can diminish the possibility of the delamination/failure of the low-k material.     

Electrically Activated Paper Actuators

This paper describes the design and fabrication of electrically controlled paper actuators that operate based on the dimensional changes that occur in paper when the moisture absorbed on the surface of the cellulose fibers changes. These actuators are called “Hygroexpansive Electrothermal Paper Actuators” (HEPAs). The actuators are made from paper, conducting polymer, and adhesive tape. They are lightweight, inexpensive, and can be fabricated using simple printing techniques. The central element of the HEPAs is a porous conducting path (used to provide electrothermal heating) that changes the moisture content of the paper and causes actuation. This conducting path is made by embedding a conducting polymer (PEDOT:PSS) within the paper, and thus making a paper/polymer composite that retains the porosity and hydrophilicity of paper. Different types of HEPAs (straight, precurved, and creased) achieved different types of motions (e.g., bending motion, accordion type motion). A theoretical model for their behavior is proposed. These actuators have been used for the manipulation of liquids and for the fabrication of an optical shutter.     

MetamorphicIn0.53Ga0.47As/In0.52Al0.48As HEMTs on germanium substrates

We report for the first time the successful epitaxial growth and processing of high-performance metamorphic high electron mobility transistors (HEMTs) on Ge substrates, with a transconductance of 700 mS/mm and a saturation channel current of 650 mA/mm. To reduce parasitic capacitances due to the conductive substrate, a dry etch method based on CF₄ and O₂ reactive ion etching (RIE) is developed for selective substrate removal. Devices with 0.2 μm gate length display an increase of the extrinsic cut-off frequency f_T from 45 GHz before, to 75 GHz after substrate removal, whereas the maximum oscillation frequency f_max increases from 68 GHz to 95 GHz. Based on this excellent rf performance level, in combination with the highly selective thinning process, we think that Ge as a sacrificial substrate is a promising candidate for the integration of thinned individual HEMTs with passive circuitry on low-cost substrates. This could result in low-cost advanced hybrid systems for mass-market millimeter wave applications     

Optimal DLC protocol configuration for realistic broadband fixed wireless access networks based on ATM

DLC protocols, scheduling, and multiplexing issues for broadband fixed wireless access networks based on ATM are discussed. The established DSA++ mac protocol has been developed at ComNets and has been widely applied within the German project ATMmobil. It has been a fundamental contribution to the etsi bran standardisation of HIPERLAN /2. The DSA++ is here modified to perform optimal within the fixed wireless access network environment. Therefore, realistic traffic as well as radio channel models for the respective scenarios are introduced. Simulation results are presented, showing the feasibility of the respective protocol stack for offering broadband multimedia services with reasonable quality of service. In addition to this advanced protocol approach, two systems are discussed which are currently under standardisation process. The IEEE 802.16 as well as the European hiperaccess systems are both proposed for fixed wireless access networks. Expected scenarios and applications are presented and basic requirements the standards have to fulfil are derived. As another aspect of access networks, their impact on the global information society is discussed.