Polyetherimide substrates for future high density optical data storage

Polyetherimide (PEI) substrate for next‐generation high density optical data storage is fabricated and characterized. Cover‐layer incident or first‐surface recording configurations do not require optical properties of the substrate, which are the prerequisite conditions for the conventional material of polycarbonate (PC). Instead of the optical properties, good mechanical properties with a sufficient transcribability are required. Even though PEI has higher glass transition temperature than that of PC, a microscopic transcribability of PEI is comparable with PC by laminating a thermal insulation layer on the backside of a stamper to retard the heat flow. A macroscopic warpage of PEI substrate is smaller than that of PC substrates, which reduces tilt and servo burden. The lowest critical speed coupled with the flutter of PEI substrate is larger than that of PC substrate because of the mechanical properties of PEI. POLYM. ENG. SCI., 48:97–101, 2008. © 2007 Society of Plastics Engineers     

基于USB的155 Mb/s码型发生器的研制

介绍了一种带USB接口的光的155Mb／s码型发生器。伪随机码和其他格式的码型由PC产生通过USB接口进入双口RAM，再经串并变换后由光发射模块发射。该系统可方便地设定各种格式的码型，并同时具备光接口和电接口，可广泛应用于光通信各种实验中，具有重要的实用价值。     

Formation mechanism of 21R AlN-polytypoids in aluminothermic reduction and nitridation process

Synthesis of 21R AlN polytypoids was investigated using Al and ultrafine SiO₂ powder in a flowing nitrogen atmosphere by means of thermal gravity (TG), differential scanning calorimeter (DSC), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) linked with energy dispersive spectrometer (EDS). The results showed that the formation mechanism of AlN polytypoids was different from that in reaction sintering process using Si₃N₄, AlN, Al₂O₃ and other sintering additive as raw materials. It was suggested that firstly Al reduce SiO₂ into Si and is also nitrided into AlN, then AlN, Al₂O₃ and SiO₂ dissolve into silicon liquid until the AlN polytypoids precipitate in saturated liquid in a flowing nitrogen atmosphere at lower than 1700 °C.     

Performance modeling and evaluation of data/voice services in wireless networks

Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance, a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network architecture, network element details using the proposed simulation methodology. We assess the user-perceived application performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM), G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level performance is affected by various elements and layers of the network and thus it must be considered in all phases of the development process. Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea, in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences (KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE. Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member of the KICS. Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and 4G network. He is a member of the KICS. Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and 2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design, radio resource management, cross layer design, and handoff in wireless systems.     

Highly ordered anodic alumina nanotemplate with about 14 nm diameter

A novel method for the fabrication of highly ordered nanopore arrays with very small diameter of 14 nm was demonstrated by using low-temperature anodization. Two-step anodization was carried out at 25 V, sulfuric acid concentration of 0.3 M, and electrolyte temperature of −15 °C. After anodization, a regular pore array with mean diameter of 14 nm and interpore distance of 65 nm was formed. The pore diameter and regular arrangement were confirmed by scanning electron microscopy (SEM) and fast Fourier transformation (FFT), respectively. The present results strongly suggest that the diameter of pores in a highly ordered alumina template can be reduced by lowering the anodization temperature.     

Complementary effects of solid lubricants in the automotive brake lining

An experimental investigation was carried out to examine the tribological behavior of NAO (non-asbestos organic) type brake linings containing different volume ratios of graphite and antimony trisulfide (Sb₂S₃). A scale dynamometer was used for friction tests and particular emphases were given to the effect of applied pressure, sliding speed, and temperature on the coefficient of friction according to the relative amounts of the two solid lubricants. Results showed that the brake linings with both solid lubricants exhibited better friction stability and less speed sensitivity than the friction materials containing a single solid lubricant. In particular, the brake lining containing higher concentrations of graphite showed better fade resistance than others during high-temperature friction test.     

Synthesis of Mg-α-sialon from the mixture of silicon, aluminum and magnesia powders in a flowing nitrogen atmosphere

Synthesis of Mg-α-Sialon has been investigated by the mixture of silicon, aluminum and magnesia powders in a flowing nitrogen atmosphere in the range of 1300–1600 °C, when Mg-α-Sialon is designed with a chemical formulation of Mg _x Si_12−3x Al_3x O _x N_16−x in present work. The results showed that Mg-α-sialon initially occurred at 1400 °C and basically increased with elevated temperatures. For the samples of x = 0.6, 0.8 and 1.0 the products mainly consisted of Mg-α-Sialon with small amounts of Si, AlN and 21R AlN-polytypoid phases at 1600° C. However, in final products of x = 1.2, 1.4 and 1.6 only a little of Mg-α-Sialon formed and a great amount of Si remained in these samples at all the fired temperatures. Fortunately, the content of Mg-α-Sialon in these samples were obviously increased by adding a small amount of α-Si₃N₄ as seeds before nitridation.     

A Study on NMR and GC/MS Spectra of the Isomers of Linear Hexyl Naphthalene

The GC/MS and NMR analysis of the reaction products of naphthalene with 1-bromohexane were reported. The products obtained were suggested to have six isomers of linear hexylnaphthalene and the structure of each isomer was determined by GC/MS and NMR spectra. For the first time, the unique chemical shift data were obtained. The content of each isomer calculated by ¹H NMR and ¹³C NMR spectra was consistent with that by GC/MS spectra, which confirmed the accuracy of NMR data.     

Collision-Free Interleaver Composed of a Latin Square for Parallel-Architecture Turbo Codes

In parallel-architecture turbo codes, the constituent interleavers must avoid memory collision. This paper proposes a collision-free interleaver structure composed of a Latin square (LS) and pre-designed interleavers. Our proposed interleavers can be easily optimized for various information block sizes and for various degrees of parallelism. Their performances were evaluated by computer simulation.     

Study on the c-axis preferred orientation of ZnO film on various metal electrodes

ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.