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中国卫星通信集团公司(以下简称中国卫通)是根据国务院电信体制改革的总体部署,于2001年12月19日正式挂牌成立的国有大型骨干企业,是我国六大基础电信运营企业之一。中国卫通下设30个省级分公司和17个全资、控股、参股企业。作为我国卫星通信广播电视运营的主导企业,中国卫通以保障国家卫星通信广播安全、服务国民经济和社会发展为已任,不断以特色化通信保障国家信息网络安全,服务信息社会。特别是在卫星广播电视传输、应急指挥调度通信等特殊领域和边远农村、海上通信、自然灾害、突发事件等特殊区域,发挥了不可替代的作用,在为缩小数字鸿沟助力,构建和谐信息社会的进程中做出了重要贡献。 相似文献
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管道风险管理方法研究 总被引:6,自引:0,他引:6
按照管道风险管理的流程分别对管道风险评价、风险控制和决策支持、效能测试和响应进行了论述。针对目前国内管道行业的情况,提出了进行管道风险评价的有效方法及维护措施。着重介绍了国外管道风险可接受标准的情况,作为国内制定管道风险评价标准的参考。 相似文献
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Chong D. Y. R. Lim B. K. Rebibis K. J. Pan S. J. Sivalingam K. Kapoor R. Sun A. Y. S. Tan H. B. 《Advanced Packaging, IEEE Transactions on》2006,29(4):674-682
The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported 相似文献
17.
Shiao-Shien Chen Tung-Yang Chen Tien-Hao Tang Jin-Lian Su Tzer-Min Shen Jen-Kon Chen 《Electron Devices, IEEE Transactions on》2003,50(7):1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs. 相似文献
18.
A vacuum-annealed La0.6Ca0.4CoO3−x was consecutively oxygenated in air at temperatures decreasing from 800 to 100 °C, and its electrocatalytic activities for oxygen reduction and evolution were then measured as a function of the oxygenation temperature. The valence of Co cation, changing between +2 and +3, was found susceptible to annealing either in vacuum or air. The catalytic activities initially decrease monotonically as the oxygenation temperature was decreased from 800 to 300 °C, as a result of increasing oxygen content, and then rise abruptly with the oxygen reduction activity reaching a maximum at 200 °C and the oxidation activity at 150 °C. X-ray photoelectron spectroscopy analysis indicated that the enhancements by the low-temperature oxygenation involved increased OH coverage and less charged cations at surface. The results clearly reveal the importance of the post-calcination annealing process for optimizing the performance of La0.6Ca0.4CoO3−x in air electrode applications. 相似文献
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A.L. Pan H.G. ZhengZ.P. Yang F.X. Liu Z.J. Ding Y.T. Qian 《Materials Research Bulletin》2003,38(5):789-796
Small Ag particles or clusters dispersed mesoporous SiO2 composite films were prepared by a new method: First the matrix SiO2 films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO3 solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO2 films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements. 相似文献